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ORCIDIMW 2022: Dresden, Germany
- IEEE International Memory Workshop, IMW 2022, Dresden, Germany, May 15-18, 2022. IEEE 2022, ISBN 978-1-6654-9947-7
Session #1: Keynotes
- Lars Heineck, Jin Liu:
3D NAND Flash Status and Trends. 1-4 - Johannes Müller, Aleksandra Titova, Hongsik Yoon, Thomas Merbeth, Martin Weisheit, Georg Wolf, Sanjeeb Bharali, Bert Pfefferling, Yuichi Otani, Tetyana Shapoval, Alberto Cagliani, Ferenc Vajda, Pedram Sadeghi, Christiana Villas-Boas Grimm, Frank Krause, Ines Altendorf, Gabriele Congedo, Robert Binder, Joachim Metzger, Alexander Lajn, Markus Langner, Young Seon You, Oliver Kallensee, Vinayak Bharat Naik, Kazutaka Yamane, Steven Soss:
From Emergence to Prevalence: 22FDX® Embedded STT-MRAM. 1-4 - Giuseppe Croce:
Non Volatile Memory in Advanced Smart Power technology: product requirements and integration solutions. 1-4
Session #2: RRAM+PCRAM I
- Gabriel Molas, Giuseppe Piccolboni, Alessandro Bricalli, Anthonin Verdy, I. Naot, Y. Cohen, Amir Regev, I. Naveh, Damien Deleruyelle
, Quentin Rafhay, Niccolo Castellani, Lucas Reganaz, Alain Persico, R. Segaud, Jean-François Nodin, Valentina Meli, S. Martin, François Andrieu, Laurent Grenouillet:
High temperature stability embedded ReRAM for 2x nm node and beyond. 1-4 - Matteo Baldo, Luca Laurin, Elisa Petroni, Giulia Samanni, M. Allegra, Enrico Gomiero, Daniele Ielmini, Andrea Redaelli:
Modeling Environment for Ge-rich GST Phase Change Memory Cells. 1-4 - Sijung Yoo, Donghoon Kim, Yoon Mo Koo, Sujee Kim Wooju Jeong, Hyungjoon Shim, Won-Jun Lee, Beom Seok Lee, Seungyun Lee, Hyejung Choi, Hyung Dong Lee, Taehoon Kim, Myung-Hee Na:
Structural and Device Considerations for Vertical Cross Point Memory with Single-stack Memory toward CXL Memory beyond 1x nm 3DXP. 1-4
Session #3: Posters
- T. Dubreuil, P. Amari, Sylvain Barraud, Joris Lacord, Eduardo Esmanhotto, Valentina Meli, S. Martin, Niccolo Castellani, Bernard Previtali, François Andrieu:
A novel 3D 1T1R RRAM architecture for memory-centric Hyperdimensional Computing. 1-4 - Tarek Ali, Ricardo Olivo, S. Kerdilès, David Lehninger, Maximilian Lederer, Sourav De, A.-S. Royet, Ayse Sünbül, A. Prabhu, Kati Kühnel, Malte Czernohorsky, M. Rudolph, Raik Hoffmann, Christelle Charpin-Nicolle, Laurent Grenouillet, Thomas Kämpfe, Konrad Seidel:
Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability. 1-4 - Po-Kai Hsu, Shimeng Yu:
In-Memory 3D NAND Flash Hyperdimensional Computing Engine for Energy-Efficient SARS-CoV-2 Genome Sequencing. 1-4 - Weishen Chu, Seyyed Ehsan Esfahani Rashidi, Yanli Zhang, Johann Alsmeier, Toshiyuki Sega:
An Analytical Model for Thin Film Pattern-dependent Asymmetric Wafer Warpage Prediction. 1-4 - Akihiro Yamada, Yuwa Kishi, Takayuki Kawahara:
Bi-directional read method to reduce SOT-specific read disturbance for highly reliable SOT-MRAM. 1-4 - Lei Chen, Zongpeng Zhu, Anyu Li, Najmeh Mashhadi, Robert Frickey, Jinhe Ye, Xin Guo:
SSD Drive Failure Prediction on Alibaba Data Center Using Machine Learning. 1-4 - Sangsu Park, Gyonhui Lee, Youngjae Kwon, Dong Ik Suh, Hanwool Lee, Sangeun Je, Dabin Kim, Dohan Lee, Seungwook Ryu, Seungbum Kim, Euiseok Kim, Sunghoon Lee, Kyoung Park, Seho Lee, Myung-Hee Na, Seonyong Cha:
Recognition Accuracy Enhancement using Interface Control with Weight Variation-Lowering in Analog Computation-in-Memory. 1-3 - Saurabh V. Suryavanshi, Greg Yeric, Max Irby, X. M. Henry Huang, Glen Rosendale, Lucian Shifren:
Extreme Temperature (> 200 °C), Radiation Hard (> 1 Mrad), Dense (sub-50 nm CD), Fast (2 ns write pulses), Non-Volatile Memory Technology. 1-4 - Yuya Ichikawa, Akira Goda, Chihiro Matsui, Ken Takeuchi:
Non-volatile Memory Application to Quantum Error Correction with Non-uniformly Quantized CiM. 1-4 - Yannick Raffel, Ricardo Olivo, Maximilian Lederer, Franz Müller, Raik Hoffmann, Tarek Ali, Konstantin Mertens, Luca Pirro, Maximilian Drescher, Sven Beyer, Thomas Kämpfe, Konrad Seidel, Lukas M. Eng, J. Heitmann:
Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination. 1-4
Session #4: MRAM+FERRO I
- Nicolo Ronchi, Lars-Åke Ragnarsson, Umberto Celano, Ben Kaczer, K. Kaczmarek, K. Banerjee, Sean R. C. McMitchell, Geert Van den Bosch, Jan Van Houdt:
A comprehensive variability study of doped HfO2 FeFET for memory applications. 1-4 - Ruben Alcala, Furqan Mehmood, Pramoda Vishnumurthy, Terence Mittmann, Thomas Mikolajick, Uwe Schroeder:
Influence of Interfacial Oxide Layers in Hf0.5Zr0.5O2 based ferroelectric capacitors on reliability performance. 1-4 - Yandong Luo, Piyush Kumar, Yu-Ching Liao, William Hwang, Fen Xue, Wilman Tsai, Shan X. Wang, Azad Naeemi, Shimeng Yu:
Performance Benchmarking of Spin-Orbit Torque Magnetic RAM (SOT-MRAM) for Deep Neural Network (DNN) Accelerators. 1-4 - Stuart Parkin:
Racetrack Memory: a high capacity, high performance, non-volatile spintronic memory. 1-4 - David Lehninger, Hannes Mähne, Tarek Ali, Raik Hoffmann, Ricardo Olivo, Maximilian Lederer, Konstantin Mertens, Thomas Kämpfe, Kati Biedermann, Matthias Landwehr, Andreas Heinig, Defu Wang, Yukai Shen, Kerstin Bernert, Steffen Thiem, Konrad Seidel:
Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS Technology. 1-4 - Milan Pesic, Andrea Padovani, Tommaso Rollo, Bastien Beltrando, Jack Strand, Parnika Agrawal, Alexander L. Shluger, Luca Larcher:
Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents. 1-4
Session #5: Flash+3D-NAND
- Yu-Hsuan Lin, Po-Hao Tseng, Feng-Min Lee, Ming-Hsiu Lee, Chih-Chang Hsieh, Dai-Ying Lee, Keh-Chung Wang, Chih-Yuan Lu:
NOR Flash-based Multilevel In-Memory-Searching Architecture for Approximate Computing. 1-4 - Hitomi Tanaka, Yuta Aiba, Takashi Maeda, Kensuke Ota, Yusuke Higashi, Keiichi Sawa, Fumie Kikushima, Masayuki Miura, Tomoya Sanuki:
Toward 7 Bits per Cell: Synergistic Improvement of 3D Flash Memory by Combination of Single-crystal Channel and Cryogenic Operation. 1-4 - S. Rachidi, Antonio Arreghini, Devin Verreck, G. L. Donadio, K. Banerjee, K. Katcko, Y. Oniki, Geert Van den Bosch, Maarten Rosmeulen:
At the Extreme of 3D-NAND Scaling: 25 nm Z-Pitch with 10 nm Word Line Cells. 1-4
Session #6: RRAM+PCRAM II
- Gabriele Navarro, C. Sabbione, Valentina Meli, L. E. Nistor, M. Frei, Julien Garrione, M. Tessaire, F. Fillot, Nicolas Bernier, Emmanuel Nolot, Benoit Sklénard, J. Li, S. Martin, Niccolo Castellani, Guillaume Bourgeois, Marie Claire Cyrille, François Andrieu:
Multilayer Deposition in Phase-Change Memory for Best Endurance Performance and Reduced Bit Error Rate. 1-4 - Munehiro Tada:
NanoBridge Technology for Embedded Novolatile Memory Application. 1-4 - Christian Peters, Frank Adler, Karl Hofmann, Jan Otterstedt:
Reliability of 28nm embedded RRAM for consumer and industrial products. 1-3 - Syed M. Alam, Dimitri Houssameddine, F. Neumeyer, I. Rahman, M. DeHerrera, S. Ikegawa, P. Sanchez, X. Zhang, Y. Wang, J. Williams, Dietmar Gogl, H. Xu, M. Farook, D. Aceves, H. K. Lee, Fred B. Mancoff, M. Chou, CH. Tan, B. Huang, S. Mukherjee, M. Lu, A. Shah, K. Nagel, Y. Kim, S. Aggarwal:
Persistent xSPI STT-MRAM with up to 400MB/s Read and Write Throughput. 1-4 - Joel Minguet Lopez, François Rummens, Lucas Reganaz, A. Heraud, Tifenn Hirtzlin, Laurent Grenouillet, Gabriele Navarro, Mathieu Bernard, Catherine Carabasse, Niccolo Castellani, Valentina Meli, S. Martin, Thomas Magis, Elisa Vianello, C. Sabbione, Damien Deleruyelle, Marc Bocquet, Jean-Michel Portal, Gabriel Molas, François Andrieu:
1S1R sub-threshold operation in Crossbar arrays for low power BNN inference computing. 1-4
Session #7: MRAM+FERRO II
- Nishtha S. Gaul, Akhilesh Jaiswal, Hongsik Yoon, Taeyoung Lee, Kazutaka Yamane, Joseph Versaggi, Rick Carter, Bipul C. Paul:
A Physics based MTJ Compact Model for State-of-the-Art and Emerging STT-MRAM Failure Analysis and Yield Enhancement. 1-4 - Shinsei Yoshikiyo, Naoko Misawa, Kasidit Toprasertpong, Shinichi Takagi, Chihiro Matsui, Ken Takeuchi:
Edge Retraining of FeFET LM-GA CiM for Write Variation & Reliability Error Compensation. 1-4 - Daniel Christopher Worledge:
Spin-Transfer-Torque MRAM: the Next Revolution in Memory. 1-4 - Jae-Gil Lee, Joongsik Kim, Dong Ik Suh, Ildo Kim, Gwon Deok Han, Seung Wook Ryu, Seho Lee, Myung-Hee Na, Seonyong Cha, Hyeon Woo Park, Cheol Seong Hwang:
Memory Window Expansion for Ferroelectric FET based Multilevel NVM: Hybrid Solution with Combination of Polarization and Injected Charges. 1-4
Session #8: Storage Memory+3D-NAND
- Sunghyun Yoon, Sung-In Hong, Garam Choi, Daehyun Kim, Ildo Kim, Seok Min Jeon, Changhan Kim, Kyunghoon Min:
Highly Stackable 3D Ferroelectric NAND Devices: Beyond the Charge Trap Based Memory. 1-4 - Alessio Spessot, Shairfe Muhammad Salahuddin, Ricardo Escobar, Romain Ritzenthaler, Yang Xiang, Rahul Budhwani, Eugenio Dentoni Litta, Elena Capogreco, Joao Bastos, Yangyin Chen, Naoto Horiguchi:
Thermally stable, packaged aware LV HKMG platforms benchmark to enable low power I/O for next 3D NAND generations. 1-4 - Laurent Breuil, L. Nyns, S. Rachidi, K. Banerjee, Antonio Arreghini, J. P. Bastos, S. Ramesh, Geert Van den Bosch, Maarten Rosmeulen:
High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction. 1-4 - Maarten Rosmeulen, Cesar J. Lockhart de la Rosa, K. Willems, S. Fransen, B.-Y. Shih, Devin Verreck, V. Kalangi, F. Yasin, Harold Philipsen, Y. T. Set, N. Ronchi, W. Van Roy, O. Y. F. Henry, Antonio Arreghini, Geert Van den Bosch, Arnaud Furnémont:
Liquid Memory and the Future of Data Storage. 1-4
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