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2020 – today
- 2025
[c17]S. Rachidi, S. Ramesh, Devin Verreck, J. Loyo, Y. Jeong, H. Puliyalil, Jie Li
, F. Seidel, Geert Van Den Bosch, Maarten Rosmeulen:
Hole-Side Airgap Integration as Enabler for 3D NAND Flash Z-Pitch Scaling. IMW 2025: 1-4- [c16]Yusuke Higashi, Anirudh Varanasi, Philippe J. Roussel, Pablo Saraza-Canflanca, J. P. Bastos, Alexander Grill, E. Catapano, R. Asanovski, Jacopo Franco, Ben Kaczer, Adrian Chasin, Devin Verreck, S. Ramesh, Laurent Breuil, Antonio Arreghini, S. Rachidi, Y. Jeong, Geert Van den Bosch, Maarten Rosmeulen, Robin Degraeve:
Advanced RTN Analysis on 3D NAND Trench Devices Using Physics-Informed Machine Learning Framework. IRPS 2025: 1-6 - [c15]Khakim Akhunov, Dwaipayan Biswas, Emil Karimov, Arvind Sharma, Hyungrock Oh, Maarten Rosmeulen, Julien Ryckaert, James Myers:
Framework for Augmenting Main Memory with CXL-connected Emerging Memory Alternatives. ISCAS 2025: 1-5 - [c14]Bowen Wang, Khakim Akhunov, Hyungrock Oh, Fernando García-Redondo, Yukai Chen, Arvind Sharma, Jiacong Sun, Sahan Gamage, Maarten Rosmeulen, Swaraj Bandhu Mahato, Rishabh Kishore, Subhali Subhechha, Jaydeep Kulkarni, Marian Verhelst, Dwaipayan Biswas, Marie Garcia Bardon, Wim Dehaene, Julien Ryckaert:
3D IGZO Charge-Coupled Memory DTCO & STCO Analysis for Compute-near-Memory Applications. ISCAS 2025: 1-5 - 2024
- [c13]Mattia Gerardi, Arvind Sharma, Yang Xiang, Jakub Kaczmarek, Fernando García-Redondo, Maarten Rosmeulen, Marie Garcia Bardon:
A DTCO Framework for 3D NAND Flash Readout. DATE 2024: 1-2 - [c12]Laurent Breuil, R. Izmailov, Mihaela Ioana Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, Geert Van den Bosch, Jan Van Houdt, Maarten Rosmeulen:
Gate Side Injection Operating Mode for 3D NAND Flash Memories. IMW 2024: 1-4 - [c11]S. Rachidi, S. Ramesh, Davide Tierno, G. L. Donadio, A. Pacco, J. W. Maes, Y. Jeong, Antonio Arreghini, Geert Van den Bosch, Maarten Rosmeulen:
Pure-Metal Replacement Gate for Reliable 30 nm Pitch Scaled 3D NAND Flash. IMW 2024: 1-4 - [c10]Yusuke Higashi, J. P. Bastos, Adrian Vaisman Chasin, Laurent Breuil, Antonio Arreghini, S. Ramesh, S. Rachidi, Y. Jeong, Geert Van den Bosch, Maarten Rosmeulen:
Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance. IRPS 2024: 1-6 - [c9]Davide Tierno, Antonio Arreghini, Alicja Lesniewska, Y. Jeong, Marleen H. van der Veen, J. Stiers, N. Bazzazian, Ivan Ciofi, Geert Van den Bosch, Maarten Rosmeulen:
Exploring the Reliability Limits for the Z-Pitch Scaling of Molybdenum Inter-Word Line Oxides in 3D NAND. IRPS 2024: 1-5 - 2023
- [c8]Laurent Breuil, Mihaela Ioana Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, Geert Van den Bosch, Jan Van Houdt, Maarten Rosmeulen:
Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND. IMW 2023: 1-4 - [c7]Zhuo Chen, Nicolo Ronchi, Amey Walke, Kaustuv Banerjee, Mihaela Ioana Popovici, Kostantine Katcko, Geert Van den Bosch, Maarten Rosmeulen, Valeri Afanas'ev, Jan Van Houdt:
Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering. IMW 2023: 1-4 - [c6]S. Rachidi, S. Ramesh, Laurent Breuil, Z. Tao, Devin Verreck, G. L. Donadio, Antonio Arreghini, Geert Van den Bosch, Maarten Rosmeulen:
Enabling 3D NAND Trench Cells for Scaled Flash Memories. IMW 2023: 1-4 - 2022
- [c5]Laurent Breuil, L. Nyns, S. Rachidi, K. Banerjee, Antonio Arreghini, J. P. Bastos, S. Ramesh, Geert Van den Bosch, Maarten Rosmeulen:
High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction. IMW 2022: 1-4 - [c4]S. Rachidi, Antonio Arreghini, Devin Verreck, G. L. Donadio, K. Banerjee, K. Katcko, Yusuke Oniki, Geert Van den Bosch, Maarten Rosmeulen:
At the Extreme of 3D-NAND Scaling: 25 nm Z-Pitch with 10 nm Word Line Cells. IMW 2022: 1-4 - [c3]Maarten Rosmeulen, Cesar J. Lockhart de la Rosa, K. Willems, S. Fransen, B.-Y. Shih, Devin Verreck, V. Kalangi, F. Yasin, Harold Philipsen, Y. T. Set, N. Ronchi, W. Van Roy, O. Y. F. Henry, Antonio Arreghini, Geert Van den Bosch, Arnaud Furnémont:
Liquid Memory and the Future of Data Storage. IMW 2022: 1-4 - 2021
- [c2]Franz Schanovsky, Devin Verreck, Antonio Arreghini, Gerhard Rzepa, Zlatan Stanojevic, Christian Kernstock, Oskar Baumgartner, Maarten Rosmeulen, Markus Karner:
A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics. IMW 2021: 1-4 - [c1]Davide Tierno, Kristof Croes, Arjun Ajaykumar, Siva Ramesh, Geert Van den Bosch, Maarten Rosmeulen:
Reliability of Mo as Word Line Metal in 3D NAND. IRPS 2021: 1-6
2010 – 2019
- 2018
- [j4]Lin-Kun Wu, David San Segundo Bello, Philippe Coppejans, Jan Craninckx, Andreas Süss, Maarten Rosmeulen, Piet Wambacq, Jonathan Borremans:
Analysis and Design of a CMOS Ultra-High-Speed Burst Mode Imager with In-Situ Storage Topology Featuring In-Pixel CDS Amplification. Sensors 18(11): 3683 (2018) - 2016
- [j3]Tomislav Resetar, Koen De Munck, Luc Haspeslagh, Maarten Rosmeulen, Andreas Süss, Robert Puers, Chris Van Hoof:
Development of Gated Pinned Avalanche Photodiode Pixels for High-Speed Low-Light Imaging. Sensors 16(8): 1294 (2016)
2000 – 2009
- 2007
- [j2]Giuseppina Puzzilli, Bogdan Govoreanu, Fernanda Irrera, Maarten Rosmeulen, Jan Van Houdt:
Characterization of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C-V technique. Microelectron. Reliab. 47(4-5): 508-512 (2007) - 2002
- [j1]Jeroen A. Croon, Maarten Rosmeulen, Stefaan Decoutere, Willy Sansen, Herman E. Maes:
An easy-to-use mismatch model for the MOS transistor. IEEE J. Solid State Circuits 37(8): 1056-1064 (2002)
Coauthor Index
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