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David Lehninger
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2020 – today
- 2024
- [c12]Sukhrob Abdulazhanov, Q. H. Le, David Lehninger, Ayse Sünbül, Thomas Kämpfe, G. Gerlach:
Improved Tunability of BEoL-integrated Hafnium Zirconium Oxide Varactors for mmWave Applications. DRC 2024: 1-2 - [c11]Maximilian Lederer, Franz Müller, Raik Hoffmann, Ricardo Olivo, Yannick Raffel, Shouzhuo Yang, Sourav De, Roman Potjan, Oliver Ostien, Abdelrahman Altawil, Ayse Sünbül, David Lehninger, Thomas Kämpfe, Konrad Seidel:
Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions. IMW 2024: 1-4 - [c10]Ayse Sünbül, David Lehninger, Raik Hoffmann, Hannes Mähne, Kerstin Bernert, Steffen Thiem, Thomas Kämpfe, Konrad Siedel, Maximilian Lederer, Lukas M. Eng
:
Improved Endurance Reliability of Ferroelectric Hafnium Oxide-Based BEoL Integrated MFM Capacitors. IRPS 2024: 1-5 - 2023
- [c9]Sukhrob Abdulazhanov, Quang Huy Le, Dang Khoa Huynh, David Lehninger, Thomas Kämpfe, Gerald Gerlach:
Permittivity Characterization of Ferroelectric Thin-Film Hafnium Zirconium Oxide Varactors up to 170 GHz. DRC 2023: 1-2 - [c8]David Lehninger, Ayse Sünbül, Ricardo Olivo, Thomas Kämpfe
, Konrad Seidel, Maximilian Lederer:
Ferroelectric HfO2/ZrO2 Superlattices with Improved Leakage at Bias and Temperature Stress. IMW 2023: 1-4 - [c7]Konrad Seidel, David Lehninger, Franz Müller, Yannick Raffel, Ayse Sünbül, Ricardo Revello, Raik Hoffmann, Sourav De, Thomas Kämpfe
, Maximilian Lederer:
Hafnium oxide-based Ferroelectric Memories: Are we ready for Application? IMW 2023: 1-4 - 2022
- [c6]Sukhrob Abdulazhanov, Dang Khoa Huynh, Quang Huy Le, David Lehninger, Thomas Kämpfe
, Gerald Gerlach:
BEoL integrated hafnium zirconium oxide varactors for tunable mmWave applications. ESSDERC 2022: 253-256 - [c5]Tarek Ali, Ricardo Olivo, S. Kerdilès, David Lehninger, Maximilian Lederer
, Sourav De, A.-S. Royet, Ayse Sünbül, A. Prabhu, Kati Kühnel, Malte Czernohorsky, M. Rudolph, Raik Hoffmann, Christelle Charpin-Nicolle, Laurent Grenouillet, Thomas Kämpfe
, Konrad Seidel:
Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability. IMW 2022: 1-4 - [c4]David Lehninger, Hannes Mähne, Tarek Ali, Raik Hoffmann, Ricardo Olivo, Maximilian Lederer
, Konstantin Mertens, Thomas Kämpfe
, Kati Biedermann, Matthias Landwehr, Andreas Heinig, Defu Wang, Yukai Shen
, Kerstin Bernert, Steffen Thiem, Konrad Seidel:
Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS Technology. IMW 2022: 1-4 - [c3]Ayse Sünbül, Tarek Ali, Raik Hoffmann, Ricardo Revello, Yannick Raffel, Pardeep Duhan, David Lehninger, Kati Kühnel, Matthias Rudolph, Sebastian Oehler, Philipp Schramm, Malte Czernohorsky, Konrad Seidel, Thomas Kämpfe
, Lukas M. Eng
:
Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions. IRPS 2022: 11-1 - [c2]Konrad Seidel, David Lehninger, Raik Hoffmann, Tarek Ali, Maximilian Lederer, Ricardo Revello, Konstantin Mertens, Kati Biedermann, Yukai Shen
, Defu Wang, Matthias Landwehr, Andreas Heinig, Thomas Kämpfe
, Hannes Mähne, Kerstin Bernert, Steffen Thiem:
Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer. VLSI Technology and Circuits 2022: 355-356 - 2020
- [c1]Tarek Ali, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Ricardo Olivo, David Lehninger, Konstantin Mertens, Franz Müller, Maximilian Lederer
, Raik Hoffmann, Clemens Mart, Mahsa N. Kalkani, Philipp Steinke, Thomas Kämpfe
, Johannes Müller, Jan Van Houdt, Konrad Seidel, Lukas M. Eng
:
Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells. IRPS 2020: 1-9
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