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ORCIDYanan Sun 0003
Person information
- affiliation: Shanghai Jiao Tong University, Shanghai, China
Other persons with the same name
- Yanan Sun — disambiguation page
- Yanan Sun 0001
![[0000-0001-6374-1429]](https://dblp1.uni-trier.de/img/orcid-mark.12x12.png "0000-0001-6374-1429")
— Sichuan University, College of Computer Science, Chengdu, China - Yanan Sun 0002 — University of British Columbia, Vancouver, Canada
- Yanan Sun 0004 — ARC Centre of Excellence in Cognition and its Disorders, NSW, Australia (and 1 more)
- Yanan Sun 0005 — Hong Kong University of Science and TechnologyKowloonHong Kong
- Yanan Sun 0006 — Tsinghua University, Department of Computer Science and Technology, Beijing, China
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2020 – today
- 2024
[j17]Chuxiong Lin, Weifeng He, Yanan Sun, Lin Shao, Bo Zhang, Jun Yang, Mingoo Seok:
A Metastability Risk Prediction and Mitigation Technique for Clock-Domain Crossing With Single-Stage Synchronizer in Near-Threshold-Voltage Multivoltage/ Frequency-Domain Network-on-Chip. IEEE J. Solid State Circuits 59(2): 616-625 (2024)- [j16]Chen Nie, Chenyu Tang, Jie Lin, Huan Hu, Chenyang Lv, Ting Cao, Weifeng Zhang, Li Jiang, Xiaoyao Liang, Weikang Qian, Yanan Sun, Zhezhi He:
VSPIM: SRAM Processing-in-Memory DNN Acceleration via Vector-Scalar Operations. IEEE Trans. Computers 73(10): 2378-2390 (2024) - 2023
- [j15]Hao Zhang, Weifeng He, Yanan Sun, Mingoo Seok:
A DFT-Compatible In-Situ Timing Error Detection and Correction Structure Featuring Low Area and Test Overhead. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42(3): 1015-1028 (2023) - [j14]Yuxuan Qin, Chuxiong Lin, Weifeng He, Yanan Sun, Zhigang Mao, Mingoo Seok:
CDAR-DRAM: Enabling Runtime DRAM Performance and Energy Optimization via In-Situ Charge Detection and Adaptive Data Restoration. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42(9): 3078-3091 (2023) - [j13]Yanan Sun, Zhi Li, Weiyi Liu, Weifeng He, Qin Wang, Zhigang Mao:
BC-MVLiM: A Binary-Compatible Multi-Valued Logic-in-Memory Based on Memristive Crossbars. IEEE Trans. Circuits Syst. I Regul. Pap. 70(5): 2048-2061 (2023) - [j12]Yanan Sun, Dengfeng Wang, Liukai Xu, Yiming Chen, Zhi Li, Songyuan Liu, Weifeng He, Yongpan Liu, Huazhong Yang, Xueqing Li:
CREAM: Computing in ReRAM-Assisted Energy- and Area-Efficient SRAM for Reliable Neural Network Acceleration. IEEE Trans. Circuits Syst. I Regul. Pap. 70(8): 3198-3211 (2023) - [c32]Dengwei Zhao, Shuai Yuan, Yanan Sun, Shikui Tu, Lei Xu:
DeepTH: Chip Placement with Deep Reinforcement Learning Using a Three-Head Policy Network. DATE 2023: 1-2 - [c31]Dengfeng Wang, Liukai Xu, Songyuan Liu, Zhi Li, Yiming Chen, Weifeng He, Xueqing Li, Yanan Sun:
TL-nvSRAM-CIM: Ultra-High-Density Three-Level ReRAM-Assisted Computing-in-nvSRAM with DC-Power Free Restore and Ternary MAC Operations. ICCAD 2023: 1-9 - [c30]Shunqin Cai, Liukai Xu, Dengfeng Wang, Zhi Li, Liang Chang, Yanan Sun:
High Energy-Efficient Approximate In-SRAM Computing with Bit-Wise Compressor Configuration and Data-Aware Weight Remapping Method for Neural Network Acceleration. ICTA 2023: 178-179 - [i1]Dengfeng Wang, Liukai Xu, Songyuan Liu, Zhi Li, Yiming Chen, Weifeng He, Xueqing Li, Yanan Sun:
TL-nvSRAM-CIM: Ultra-High-Density Three-Level ReRAM-Assisted Computing-in-nvSRAM with DC-Power Free Restore and Ternary MAC Operations. CoRR abs/2307.02717 (2023) - 2022
- [j11]Shuai Yuan, Yanan Sun, Weifeng He, Qianrong Gu, Shi Xu, Zhigang Mao, Shikui Tu:
MSLM-RF: A Spatial Feature Enhanced Random Forest for On-Board Hyperspectral Image Classification. IEEE Trans. Geosci. Remote. Sens. 60: 1-17 (2022) - [c29]Liukai Xu, Songyuan Liu, Zhi Li, Dengfeng Wang, Yiming Chen, Yanan Sun, Xueqing Li, Weifeng He, Shi Xu:
CREAM: computing in ReRAM-assisted energy and area-efficient SRAM for neural network acceleration. DAC 2022: 115-120 - [c28]Ziqi Meng, Yanan Sun, Weikang Qian:
Write or not: programming scheme optimization for RRAM-based neuromorphic computing. DAC 2022: 985-990 - [c27]Dengfeng Wanq, Zhi Li, Chengjun Chang, Weifeng He, Yanan Sun:
All-Digital Full-Precision In-SRAM Computing with Reduction Tree for Energy-Efficient MAC Operations. ICTA 2022: 150-151 - [c26]Jianfeng Wang, Nuo Xiu, Juejian Wu, Yiming Chen, Yanan Sun, Huazhong Yang, Vijaykrishnan Narayanan, Sumitha George, Xueqing Li:
An 8T/Cell FeFET-Based Nonvolatile SRAM with Improved Density and Sub-fJ Backup and Restore Energy. ISCAS 2022: 3408-3412 - 2021
- [j10]Chuxiong Lin, Weifeng He, Yanan Sun, Bingxi Pei, Pavan Kumar Chundi, Zhigang Mao, Mingoo Seok:
MEDAC: A Metastability Condition Detection and Correction Technique for a Near-Threshold-Voltage Multi-Voltage-/Frequency-Domain Network-on-Chip. IEEE J. Solid State Circuits 56(7): 2270-2280 (2021) - [j9]Zhuoran Song, Yanan Sun, Lerong Chen, Tianjian Li, Naifeng Jing, Xiaoyao Liang, Li Jiang:
ITT-RNA: Imperfection Tolerable Training for RRAM-Crossbar-Based Deep Neural-Network Accelerator. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 40(1): 129-142 (2021) - [j8]Yanan Sun, Chang Ma, Zhi Li, Yilong Zhao, Jiachen Jiang, Weikang Qian, Rui Yang, Zhezhi He, Li Jiang:
Unary Coding and Variation-Aware Optimal Mapping Scheme for Reliable ReRAM-Based Neuromorphic Computing. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 40(12): 2495-2507 (2021) - [c25]Chuxiong Lin, Weifeng He, Yanan Sun, Zhigang Mao, Mingoo Seok:
CDAR-DRAM: An In-situ Charge Detection and Adaptive Data Restoration DRAM Architecture for Performance and Energy Efficiency Improvement. DAC 2021: 1093-1098 - [c24]Ziqi Meng, Weikang Qian, Yilong Zhao, Yanan Sun, Rui Yang, Li Jiang:
Digital Offset for RRAM-based Neuromorphic Computing: A Novel Solution to Conquer Cycle-to-cycle Variation. DATE 2021: 1078-1083 - [c23]Hao Zhang, Weifeng He, Yanan Sun, Mingoo Seok:
An Area-Efficient Scannable In Situ Timing Error Detection Technique Featuring Low Test Overhead for Resilient Circuits. ICCAD 2021: 1-9 - [c22]Tianhong Shen, Yanan Sun, Weifeng He, Zhi Li, Weiyi Liu, Zhezhi He, Li Jiang:
A Ternary Memristive Logic-in-Memory Design for Fast Data Scan. ICTA 2021: 183-184 - [c21]Runsheng Wang, Zuodong Zhang, Yawen Zhang, Yixuan Hu, Yanan Sun, Weikang Qian, Ru Huang:
Can Emerging Computing Paradigms Help Enhancing Reliability Towards the End of Technology Roadmap? IRPS 2021: 1-7 - [c20]Jieyu Li, Zihan Lian, Hao Zhang, Weifeng He, Yanan Sun, Mingoo Seok:
Investigation of Dynamic Leakage-Suppression Logic Techniques Crossing Different Technology Nodes from 180 nm Bulk CMOS to 7 nm FinFET Plus Process. ISCAS 2021: 1-5 - [c19]Weiyi Liu, Yanan Sun, Weifeng He, Qin Wang:
Design of Ternary Logic-in-Memory Based on Memristive Dual-Crossbars. ISCAS 2021: 1-5 - [c18]Hao Zhang, Weifeng He, Yanan Sun, Mingoo Seok:
An Energy-Efficient Logic Cell Library Design Methodology with Fine Granularity of Driving Strength for Near- and Sub-Threshold Digital Circuits. ISCAS 2021: 1-5 - [c17]Hao Zhang, Jieyu Li, Weifeng He, Yanan Sun, Mingoo Seok:
An Ultra-Low Leakage Bitcell Structure with the Feedforward Self-Suppression Scheme for Near-Threshold SRAM. ISCAS 2021: 1-5 - 2020
- [j7]Yanan Sun, Weifeng He, Zhigang Mao, Hailong Jiao, Volkan Kursun:
Monolithic 3D Carbon Nanotube Memory for Enhanced Yield and Integration Density. IEEE Trans. Circuits Syst. I Regul. Pap. 67-I(7): 2431-2441 (2020) - [c16]Chang Ma, Yanan Sun, Weikang Qian, Ziqi Meng, Rui Yang, Li Jiang:
Go Unary: A Novel Synapse Coding and Mapping Scheme for Reliable ReRAM-based Neuromorphic Computing. DATE 2020: 1432-1437 - [c15]Zhuoran Song, Yilong Zhao, Yanan Sun, Xiaoyao Liang, Li Jiang:
ESNreram: An Energy-Efficient Sparse Neural Network Based on Resistive Random-Access Memory. ACM Great Lakes Symposium on VLSI 2020: 291-296 - [c14]Chuxiong Lin, Weifeng He, Yanan Sun, Bingxi Pei, Zhigang Mao, Mingoo Seok:
25.8 A Near- Threshold-Voltage Network-on-Chip with a Metastability Error Detection and Correction Technique for Supporting a Quad-Voltage/Frequency-Domain Ultra-Low-Power System-on-a-Chip. ISSCC 2020: 394-396
2010 – 2019
- 2019
- [j6]Yanan Sun, Jiawei Gu, Weifeng He, Qin Wang, Naifeng Jing, Zhigang Mao, Weikang Qian, Li Jiang:
Energy-Efficient Nonvolatile SRAM Design Based on Resistive Switching Multi-Level Cells. IEEE Trans. Circuits Syst. II Express Briefs 66-II(5): 753-757 (2019) - [c13]Jiachen Jiang, Yanan Sun, Weifeng He, Zhigang Mao, Volkan Kursun:
Carbon-Based Three-Dimensional SRAM Cell with Minimum Inter-Layer Area Skew Considering Process imperfections. ASICON 2019: 1-4 - [c12]Yanan Sun, Weifeng He, Zhigang Mao, Hailong Jiao, Volkan Kursun:
Statistical Modeling and Design of a 16nm 9T SRAM Cell Considering Post-Synthesis Removal of Metallic Carbon-Nanotubes. ICEIC 2019: 1-2 - [c11]Yongjie Lu, Yanan Sun, Weifeng He, Zhigang Mao:
A Novel Memristor-Reusable Mapping Methodology of In-memory Logic Implementation for High Area-Efficiency. NANOARCH 2019: 1-6 - 2018
- [j5]Chen Wang, Yanan Sun, Shiyan Hu, Li Jiang, Weikang Qian:
Variation-Aware Global Placement for Improving Timing-Yield of Carbon-Nanotube Field Effect Transistor Circuit. ACM Trans. Design Autom. Electr. Syst. 23(4): 44:1-44:27 (2018) - [c10]Pengfei Ji, Jing Gao, Wenyi Xu, Yanan Sun, Weifeng He, Hui Wu:
Electronic-Photonic Integrated Circuit Design and Crosstalk Modeling for a High Density Multi-Lane MZM Array. ISCAS 2018: 1-5 - 2017
- [j4]Wei Jin, Weifeng He, Jianfei Jiang, Haichao Huang, Xuejun Zhao, Yanan Sun, Xin Chen, Naifeng Jing:
A 0.33 V 2.5 μW cross-point data-aware write structure, read-half-select disturb-free sub-threshold SRAM in 130 nm CMOS. Integr. 58: 27-34 (2017) - [j3]Yanan Sun, Weifeng He, Zhigang Mao, Volkan Kursun:
Variable strength keeper for high-speed and low-leakage carbon nanotube domino logic. Microelectron. J. 62: 12-20 (2017) - [c9]Yanan Sun, Weifeng He, Zhigang Mao, Hailong Jiao, Volkan Kursun:
Metallic-carbon-nanotube-removal tolerant SRAM cell with 9 transistors. ASICON 2017: 908-911 - [c8]Ling Chen, Yanan Sun, Weifeng He:
Low-power single-phase clocked redundant-transition-free flip-flop design with conditional charging scheme. ASICON 2017: 916-919 - 2016
- [c7]Naifeng Jing, Taozhong Li, Zhongyuan Zhao, Wei Jin, Yanan Sun, Weifeng He, Zhigang Mao:
Enabling in-situ logic-in-memory capability using resistive-RAM crossbar memory. FPT 2016: 233-236 - 2015
- [j2]Yanan Sun, Hailong Jiao, Volkan Kursun:
A Novel Robust and Low-Leakage SRAM Cell With Nine Carbon Nanotube Transistors. IEEE Trans. Very Large Scale Integr. Syst. 23(9): 1729-1739 (2015) - [c6]Yanan Sun, Volkan Kursun:
Carbon-based sleep switch dynamic logic circuits with variable strength keeper for lower-leakage currents and higher-speed. ISCAS 2015: 2720-2723 - 2014
- [j1]Yanan Sun, Volkan Kursun:
Carbon Nanotubes Blowing New Life Into NP Dynamic CMOS Circuits. IEEE Trans. Circuits Syst. I Regul. Pap. 61-I(2): 420-428 (2014) - [c5]Yanan Sun, Hailong Jiao, Volkan Kursun:
Low-leakage 9-CN-MOSFET SRAM cell with enhanced read and write voltage margins. ICM 2014: 164-167 - 2013
- [c4]Yanan Sun, Volkan Kursun:
Low-power and compact NP dynamic CMOS adder with 16nm carbon nanotube transistors. ISCAS 2013: 2119-2122 - 2012
- [c3]Yanan Sun, Volkan Kursun:
NP dynamic CMOS resurrection with carbon nanotube field effect transistors. ISOCC 2012: 13-16 - 2011
- [c2]Yanan Sun, Volkan Kursun:
Leakage current and bottom gate voltage considerations in developing maximum performance 16nm N-channel carbon nanotube transistors. ISCAS 2011: 2513-2516 - [c1]Yanan Sun, Volkan Kursun:
Uniform carbon nanotube diameter and nanoarray pitch for VLSI of 16nm P-channel MOSFETs. VLSI-SoC 2011: 226-231
Coauthor Index
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last updated on 2024-11-06 21:32 CET by the dblp team
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