Stop the war!
Остановите войну!
for scientists:
default search action
"Leakage current and bottom gate voltage considerations in developing ..."
Yanan Sun, Volkan Kursun (2011)
- Yanan Sun, Volkan Kursun:
Leakage current and bottom gate voltage considerations in developing maximum performance 16nm N-channel carbon nanotube transistors. ISCAS 2011: 2513-2516
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.