"28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage ..."

Rossella Ranica et al. (2016)

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DOI: 10.1109/VLSIC.2016.7573512

access: closed

type: Conference or Workshop Paper

metadata version: 2022-09-29

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Rossella Ranica, Nicolas Planes, Vincent Huard, Olivier Weber, Daniel Noblet, Damien Croain, Fabien Giner, Sylvie Naudet, P. Mergault, S. Ibars, A. Villaret, Maryline Parra, Sébastien Haendler, M. Quoirin, Florian Cacho, C. Julien, F. Terrier, Lorenzo Ciampolini, David Turgis, Christophe Lecocq, Franck Arnaud:
28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications. VLSI Circuits 2016: 1-2

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