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"28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage ..."
Rossella Ranica et al. (2016)
- Rossella Ranica, Nicolas Planes, Vincent Huard, Olivier Weber, Daniel Noblet, Damien Croain, Fabien Giner, Sylvie Naudet, P. Mergault, S. Ibars, A. Villaret, Maryline Parra, Sébastien Haendler, M. Quoirin, Florian Cacho, C. Julien, F. Terrier, Lorenzo Ciampolini, David Turgis, Christophe Lecocq, Franck Arnaud:
28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications. VLSI Circuits 2016: 1-2
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