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ORCIDKazushige Kanda
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2020 – today
- 2023
[j7]Jonghak Yuh
, Yen-Lung Jason Li, Heguang Li, Yoshihiro Oyama, Cynthia Hsu, Pradeep Anantula, Gwang Yeong Stanley Jeong, Anirudh Amarnath, Siddhesh Darne, Sneha Bhatia, Tianyu Tang, Aditya Arya, Naman Rastogi, Naoki Ookuma, Hiroyuki Mizukoshi, Alex Yap, Demin Wang, Steve Kim, Yonggang Wu, Min Peng, Jason Lu, Tommy Ip, Seema Malhotra, Taekeun Han, Masatoshi Okumura, Jiwen Liu, Jeongduk John Sohn, Hardwell Chibvongodze, Muralikrishna Balaga, Akihiro Matsuda, Chen Chen, Indra K. V, V. S. N. K. Chaitanya G., Venky Ramachandra, Yosuke Kato, Ravi Kumar, Huijuan Wang, Farookh Moogat, In-Soo Yoon, Kazushige Kanda, Takahiro Shimizu, Noboru Shibata, Kosuke Yanagidaira, Takuyo Kodama, Ryo Fukuda, Yasuhiro Hirashima, Mitsuhiro Abe:
A 1-Tb 4-b/cell 4-Plane 162-Layer 3-D Flash Memory With 2.4-Gb/s IO Interface. IEEE J. Solid State Circuits 58(1): 316-328 (2023)- 2022
- [c6]Jong Yuh, Jason Li, Heguang Li, Yoshihiro Oyama, Cynthia Hsu, Pradeep Anantula, Stanley Jeong, Anirudh Amarnath, Siddhesh Darne, Sneha Bhatia, Tianyu Tang, Aditya Arya, Naman Rastogi, Naoki Ookuma, Hiroyuki Mizukoshi, Alex Yap, Demin Wang, Steve Kim, Yonggang Wu, Min Peng, Jason Lu, Tommy Ip, Seema Malhotra, David Han, Masatoshi Okumura, Jiwen Liu, John Sohn, Hardwell Chibvongodze, Muralikrishna Balaga, Aki Matsuda, Chakshu Puri, Chen Chen, Indra K. V, Chaitanya G, Venky Ramachandra, Yosuke Kato, Ravi Kumar, Huijuan Wang, Farookh Moogat, In-Soo Yoon, Kazushige Kanda, Takahiro Shimizu, Noboru Shibata, Takashi Shigeoka, Kosuke Yanagidaira, Takuyo Kodama, Ryo Fukuda, Yasuhiro Hirashima, Mitsuhiro Abe:
A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface. ISSCC 2022: 130-132 - 2020
- [j6]Noboru Shibata, Takahisa Kawabe, Taira Shibuya, Mario Sako, Kosuke Yanagidaira, Toshifumi Hashimoto, Hiroki Date, Manabu Sato, Tomoki Nakagawa, Junji Musha, Takatoshi Minamoto, Kazushige Kanda, Mizuki Uda, Dai Nakamura, Katsuaki Sakurai, Takahiro Yamashita, Jieyun Zhou, Ryoichi Tachibana, Teruo Takagiwa, Takahiro Sugimoto, Masatsugu Ogawa, Yusuke Ochi, Takahiro Shimizu, Kazuaki Kawaguchi, Masatsugu Kojima, Takeshi Ogawa, Tomoharu Hashiguchi, Ryo Fukuda, Masami Masuda, Koichi Kawakami, Tadashi Someya, Yasuyuki Kajitani, Yuuki Matsumoto, Jun Nakai, Jumpei Sato, Namasivayam Raghunathan, Yee Lih Koh, Shuo Chen, Juan Lee, Hiroaki Nasu, Hiroshi Sugawara, Koji Hosono, Toshiki Hisada, Hiroshi Nakamura, Osamu Nagao, Naoki Kobayashi, Makoto Miakashi, Yasushi Nagadomi, Tomoaki Nakano:
A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology. IEEE J. Solid State Circuits 55(1): 178-188 (2020)
2010 – 2019
- 2019
- [c5]Noboru Shibata, Kazushige Kanda, Takahiro Shimizu, Jun Nakai, Osamu Nagao, Naoki Kobayashi, Makoto Miakashi, Yasushi Nagadomi, Takeshi Nakano, Takahisa Kawabe, Taira Shibuya, Mario Sako, Kosuke Yanagidaira, Toshifumi Hashimoto, Hiroki Date, Manabu Sato, Tomoki Nakagawa, H. Takamoto, Junji Musha, Takatoshi Minamoto, Mizuki Uda, Dai Nakamura, Katsuaki Sakurai, Takahiro Yamashita, Jieyun Zhou, Ryoichi Tachibana, Teruo Takagiwa, Takahiro Sugimoto, Mikio Ogawa, Yusuke Ochi, Kazuaki Kawaguchi, Masatsugu Kojima, Takeshi Ogawa, Tomoharu Hashiguchi, Ryo Fukuda, Masami Masuda, Koichi Kawakami, Tadashi Someya, Yasuyuki Kajitani, Yuuki Matsumoto, Naohito Morozumi, Jumpei Sato, Namas Raghunathan, Yee Lih Koh, Shuo Chen, Juan Lee, Hiroaki Nasu, Hiroshi Sugawara, Koji Hosono, Toshiki Hisada, T. Kaneko, Hiroshi Nakamura:
A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology. ISSCC 2019: 210-212 - 2018
- [c4]Hiroshi Maejima, Kazushige Kanda, Susumu Fujimura, Teruo Takagiwa, Susumu Ozawa, Jumpei Sato, Yoshihiko Shindo, Manabu Sato, Naoaki Kanagawa, Junji Musha, Satoshi Inoue, Katsuaki Sakurai, Naohito Morozumi, Ryo Fukuda, Yuui Shimizu, Toshifumi Hashimoto, Xu Li, Yuki Shimizu, Kenichi Abe, Tadashi Yasufuku, Takatoshi Minamoto, Hiroshi Yoshihara, Takahiro Yamashita, Kazuhiko Satou, Takahiro Sugimoto, Fumihiro Kono, Mitsuhiro Abe, Tomoharu Hashiguchi, Masatsugu Kojima, Yasuhiro Suematsu, Takahiro Shimizu, Akihiro Imamoto, Naoki Kobayashi, Makoto Miakashi, Kouichirou Yamaguchi, Sanad Bushnaq, Hicham Haibi, Masatsugu Ogawa, Yusuke Ochi, Kenro Kubota, Taichi Wakui, Dong He, Weihan Wang, Hiroe Minagawa, Tomoko Nishiuchi, Hao Nguyen, Kwang-Ho Kim, Ken Cheah, Yee Lih Koh, Feng Lu, Venky Ramachandra, Srinivas Rajendra, Steve Choi, Keyur Payak, Namas Raghunathan, Spiros Georgakis, Hiroshi Sugawara, Seungpil Lee, Takuya Futatsuyama, Koji Hosono, Noboru Shibata, Toshiki Hisada, Tetsuya Kaneko, Hiroshi Nakamura:
A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology. ISSCC 2018: 336-338 - 2013
- [j5]Kazushige Kanda, Noboru Shibata, Toshiki Hisada, Katsuaki Isobe, Manabu Sato, Yui Shimizu, Takahiro Shimizu, Takahiro Sugimoto, Tomohiro Kobayashi, Naoaki Kanagawa, Yasuyuki Kajitani, Takeshi Ogawa, Kiyoaki Iwasa, Masatsugu Kojima, Toshihiro Suzuki, Yuya Suzuki, Shintaro Sakai, Tomofumi Fujimura, Yuko Utsunomiya, Toshifumi Hashimoto, Naoki Kobayashi, Yuuki Matsumoto, Satoshi Inoue, Yoshinao Suzuki, Yasuhiko Honda, Yosuke Kato, Shingo Zaitsu, Hardwell Chibvongodze, Mitsuyuki Watanabe, Hong Ding, Naoki Ookuma, Ryuji Yamashita:
A 19 nm 112.8 mm2 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface. IEEE J. Solid State Circuits 48(1): 159-167 (2013) - 2012
- [j4]Daisaburo Takashima, Mitsuhiro Noguchi, Noboru Shibata, Kazushige Kanda, Hiroshi Sukegawa, Shuso Fujii:
An Embedded DRAM Technology for High-Performance NAND Flash Memories. IEEE J. Solid State Circuits 47(2): 536-546 (2012) - [c3]Noboru Shibata, Kazushige Kanda, Toshiki Hisada, Katsuaki Isobe, Manabu Sato, Yui Shimizu, Takahiro Shimizu, Takahiro Sugimoto, Tomohiro Kobayashi, Kazuko Inuzuka, Naoaki Kanagawa, Yasuyuki Kajitani, Takeshi Ogawa, J. Nakai, Kiyoaki Iwasa, Masatsugu Kojima, Toshihiro Suzuki, Yuya Suzuki, Shintaro Sakai, Tomofumi Fujimura, Yuko Utsunomiya, Toshifumi Hashimoto, Makoto Miakashi, Naoki Kobayashi, M. Inagaki, Yuuki Matsumoto, Satoshi Inoue, Yoshinao Suzuki, D. He, Yasuhiko Honda, Junji Musha, Masaki Nakagawa, Mitsuaki Honma, Naofumi Abiko, Mitsumasa Koyanagi, Masahiro Yoshihara, Kazumi Ino, Mitsuhiro Noguchi, Teruhiko Kamei, Yosuke Kato, Shingo Zaitsu, Hiroaki Nasu, Takuya Ariki, Hardwell Chibvongodze, Mitsuyuki Watanabe, Hong Ding, Naoki Ookuma, Ryuji Yamashita, G. Liang, Gertjan Hemink, Farookh Moogat, Cuong Trinh, Masaaki Higashitani, Tuan Pham, Kousuke Kanazawa:
A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface. ISSCC 2012: 422-424 - 2011
- [c2]Daisaburo Takashima, Mitsuhiro Noguchi, Noboru Shibata, Kazushige Kanda, Hiroshi Sukegawa, Shuso Fujii:
An embedded DRAM technology for high-performance NAND flash memories. ISSCC 2011: 504-505
2000 – 2009
- 2008
- [c1]Kazushige Kanda, Masaru Koyanagi, Toshio Yamamura, Koji Hosono, Masahiro Yoshihara, Toru Miwa, Yosuke Kato, Alex Mak, Siu Lung Chan, Frank Tsai, Raul Cernea, Binh Le, Eiichi Makino, Takashi Taira, Hiroyuki Otake, Norifumi Kajimura, Susumu Fujimura, Yoshiaki Takeuchi, Mikihiko Itoh, Masanobu Shirakawa, Dai Nakamura, Yuya Suzuki, Yuki Okukawa, Masatsugu Kojima, Kazuhide Yoneya, Takamichi Arizono, Toshiki Hisada, Shinji Miyamoto, Mitsuhiro Noguchi, Toshitake Yaegashi, Masaaki Higashitani, Fumitoshi Ito, Teruhiko Kamei, Gertjan Hemink, Tooru Maruyama, Kazumi Ino, Shigeo Ohshima:
A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology. ISSCC 2008: 430-431 - 2002
- [j3]Kenichi Imamiya, Hiroshi Nakamura, Toshihiko Himeno, Toshio Yamamura, Tamio Ikehashi, Ken Takeuchi, Kazushige Kanda, Koji Hosono, Takuya Futatsuyama, Koichi Kawai, Riichiro Shirota, Norihisa Arai, Fumitaka Arai, Kazuo Hatakeyama, Hiroaki Hazama, Masanobu Saito, Hisataka Meguro, Kevin Conley, Khandker Quader, Jian J. Che:
A 125-mm2 1-Gb NAND flash memory with 10-MByte/s program speed. IEEE J. Solid State Circuits 37(11): 1493-1501 (2002)
1990 – 1999
- 1999
- [j2]Kenichi Imamiya, Yoshihisa Sugiura, Hiroshi Nakamura, Toshihiko Himeno, Ken Takeuchi, Tamio Ikehashi, Kazushige Kanda, Koji Hosono, Riichiro Shirota, Seiichi Aritome, Kazuhiro Shimizu, Kazuo Hatakeyama, Koji Sakui:
A 130-mm/2, 256-Mbit NAND flash with shallow trench isolation technology. IEEE J. Solid State Circuits 34(11): 1536-1543 (1999) - 1997
- [j1]Jin-Ki Kim, Koji Sakui, Sung-Soo Lee, Yasuo Itoh, Suk-Chon Kwon, Kazuhisa Kanazawa, Ki-Jun Lee, Hiroshi Nakamura, Kang-Young Kim, Toshihiko Himeno, Jang-Rae Kim, Kazushige Kanda, Tae-Sung Jung, Yoichi Oshima, Kang-Deog Suh, Kazuhiko Hashimoto, Sung-Tae Ahn, Junichi Miyamoto:
A 120-mm2 64-Mb NAND flash memory achieving 180 ns/Byte effective program speed. IEEE J. Solid State Circuits 32(5): 670-680 (1997)
Coauthor Index
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