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2010 – 2019
- 2012
[j9]Daisaburo Takashima, Mitsuhiro Noguchi, Noboru Shibata, Kazushige Kanda, Hiroshi Sukegawa, Shuso Fujii:
An Embedded DRAM Technology for High-Performance NAND Flash Memories. IEEE J. Solid State Circuits 47(2): 536-546 (2012)- 2011
- [j8]Daisaburo Takashima, Yasushi Nagadomi, Kosuke Hatsuda, Yohji Watanabe, Shuso Fujii:
A 128 Mb Chain FeRAM and System Design for HDD Application and Enhanced HDD Performance. IEEE J. Solid State Circuits 46(2): 530-536 (2011) - [j7]Daisaburo Takashima, Hidehiro Shiga
, Daisuke Hashimoto, Tadashi Miyakawa, Shinichiro Shiratake, Katsuhiko Hoya, Ryu Ogiwara, Ryosuke Takizawa, Ryosuke Doumae, Ryo Fukuda, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Susumu Shuto, Koji Yamakawa, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama:
A Scalable Shield-Bitline-Overdrive Technique for Sub-1.5 V Chain FeRAMs. IEEE J. Solid State Circuits 46(9): 2171-2179 (2011) - [c5]Daisaburo Takashima, Mitsuhiro Noguchi, Noboru Shibata, Kazushige Kanda, Hiroshi Sukegawa, Shuso Fujii:
An embedded DRAM technology for high-performance NAND flash memories. ISSCC 2011: 504-505 - 2010
- [j6]Hidehiro Shiga, Daisaburo Takashima, Shinichiro Shiratake, Katsuhiko Hoya, Tadashi Miyakawa, Ryu Ogiwara, Ryo Fukuda, Ryosuke Takizawa, Kosuke Hatsuda, Fumiyoshi Matsuoka, Yasushi Nagadomi, Daisuke Hashimoto, Hisaaki Nishimura, Takeshi Hioka, Sumiko M. Doumae, Shoichi Shimizu, Mitsumo Kawano, Toyoki Taguchi, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Yoshinori Kumura, Yoshiro Shimojo, Yuki Yamada, Yoshihiro Minami, Susumu Shuto, Koji Yamakawa, Soichi Yamazaki, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama, Tohru Furuyama:
A 1.6 GB/s DDR2 128 Mb Chain FeRAM With Scalable Octal Bitline and Sensing Schemes. IEEE J. Solid State Circuits 45(1): 142-152 (2010) - [j5]Katsuhiko Hoya, Daisaburo Takashima, Shinichiro Shiratake, Ryu Ogiwara, Tadashi Miyakawa, Hidehiro Shiga, Sumiko M. Doumae, Sumito Ohtsuki, Yoshinori Kumura, Susumu Shuto, Tohru Ozaki, Koji Yamakawa, Iwao Kunishima, Akihiro Nitayama, Shuso Fujii:
A 64-Mb Chain FeRAM With Quad BL Architecture and 200 MB/s Burst Mode. IEEE Trans. Very Large Scale Integr. Syst. 18(12): 1745-1752 (2010) - [c4]Daisaburo Takashima, Hidehiro Shiga, Daisuke Hashimoto, Tadashi Miyakawa, Shinichiro Shiratake, Katsuhiko Hoya, Ryu Ogiwara, Ryosuke Takizawa, Ryosuke Doumae, Ryo Fukuda, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Susumu Shuto, Koji Yamakawa, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama:
A scalable shield-bitline-overdrive technique for 1.3V Chain FeRAM. ISSCC 2010: 262-263
2000 – 2009
- 2009
- [c3]Hidehiro Shiga, Daisaburo Takashima, Shinichiro Shiratake, Katsuhiko Hoya, Tadashi Miyakawa, Ryu Ogiwara, Ryo Fukuda, Ryosuke Takizawa, Kosuke Hatsuda, Fumiyoshi Matsuoka, Yasushi Nagadomi, Daisuke Hashimoto, Hisaaki Nishimura, Takeshi Hioka, Sumiko M. Doumae, Shoichi Shimizu, Mitsumo Kawano, Toyoki Taguchi, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Yoshinori Kumura, Yoshiro Shimojo, Yuki Yamada, Yoshihiro Minami, Susumu Shuto, Koji Yamakawa, Soichi Yamazaki, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama, Tohru Furuyama:
A 1.6GB/s DDR2 128Mb chain FeRAM with scalable octal bitline and sensing schemes. ISSCC 2009: 464-465 - 2006
- [j4]Takashi Ohsawa, Katsuyuki Fujita, Kosuke Hatsuda, Tomoki Higashi, Tomoaki Shino, Yoshihiro Minami, Hiroomi Nakajima, Mutsuo Morikado, Kazumi Inoh, Takeshi Hamamoto, Shigeyoshi Watanabe, Shuso Fujii, Tohru Furuyama:
Design of a 128-mb SOI DRAM using the floating body cell (FBC). IEEE J. Solid State Circuits 41(1): 135-145 (2006) - [c2]Katsuhiko Hoya, Daisaburo Takashima, Shinichiro Shiratake, Ryu Ogiwara, Tadashi Miyakawa, Hidehiro Shiga, Sumiko M. Doumae, Sumito Ohtsuki, Yoshinori Kumura, Susumu Shuto, Tohru Ozaki, Koji Yamakawa, Iwao Kunishima, Akihiro Nitayama, Shuso Fujii:
A 64Mb Chain FeRAM with Quad-BL Architecture and 200MB/s Burst Mode. ISSCC 2006: 459-466 - 2004
- [c1]Osamu Wada, Toshimasa Namekawa, Hiroshi Ito, Atsushi Nakayama, Shuso Fujii:
Post-Packaging Auto Repair Techniques for Fast Row Cycle Embedded DRAM. ITC 2004: 1016-1023
1990 – 1999
- 1997
- [j3]Toshiaki Kirihata, Hing Wong, John K. DeBrosse, Yohji Watanabe, Takahiko Hara, Munehiro Yoshida, Matthew R. Wordeman, Shuso Fujii, Yoshiaki Asao, Bo Krsnik:
Flexible test mode approach for 256-Mb DRAM. IEEE J. Solid State Circuits 32(10): 1525-1534 (1997) - 1996
- [j2]Toshiaki Kirihata, Yohji Watanabe, Hing Wong, John K. DeBrosse, Munehiro Yoshida, Daisuke Kato, Shuso Fujii, Matthew R. Wordeman, Peter Poechmueller, Stephen A. Parke, Yoshiaki Asao:
Fault-tolerant designs for 256 Mb DRAM. IEEE J. Solid State Circuits 31(4): 558-566 (1996) - [j1]Yohji Watanabe, Ring Wong, Toshiaki Kirihata, Daisuke Kato, John K. DeBrosse, Takahiko Rara, Munehiro Yoshida, Rideo Mukai, Khandker N. Quader, Takeshi Nagai, Peter Poechmueller, Peter Pfefferl, Matthew R. Wordeman, Shuso Fujii:
A 286 mm2 256 Mb DRAM with ×32 both-ends DQ. IEEE J. Solid State Circuits 31(4): 567-574 (1996)
Coauthor Index
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