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Tomofumi Fujimura
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2020 – today
- 2021
- [c4]Tsutomu Higuchi, Takuyo Kodama, Koji Kato, Ryo Fukuda, Naoya Tokiwa, Mitsuhiro Abe, Teruo Takagiwa, Yuki Shimizu, Junji Musha, Katsuaki Sakurai, Jumpei Sato, Tetsuaki Utsumi, Kazuhide Yoneya, Yasuhiro Suematsu, Toshifumi Hashimoto, Takeshi Hioka, Kosuke Yanagidaira, Masatsugu Kojima, Junya Matsuno, Kei Shiraishi, Kensuke Yamamoto, Shintaro Hayashi, Tomoharu Hashiguchi, Kazuko Inuzuka, Akio Sugahara, Mitsuaki Honma, Keiji Tsunoda, Kazumasa Yamamoto, Takahiro Sugimoto, Tomofumi Fujimura, Mizuki Kaneko, Hiroki Date, Osamu Kobayashi, Takatoshi Minamoto, Ryoichi Tachibana, Itaru Yamaguchi, Juan Lee, Venky Ramachandra, Srinivas Rajendra, Tianyu Tang, Siddhesh Darne, Jiwang Lee, Jason Li, Toru Miwa, Ryuji Yamashita, Hiroshi Sugawara, Naoki Ookuma, Masahiro Kano, Hiroyuki Mizukoshi, Yuki Kuniyoshi, Mitsuyuki Watanabe, Kei Akiyama, Hirotoshi Mori, Akira Arimizu, Yoshito Katano, Masakazu Ehama, Hiroshi Maejima, Koji Hosono, Masahiro Yoshihara:
30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology. ISSCC 2021: 428-430
2010 – 2019
- 2016
- [j2]Mario Sako, Yoshihisa Watanabe, Takao Nakajima, Jumpei Sato, Kazuyoshi Muraoka, Masaki Fujiu, Fumihiro Kono, Michio Nakagawa, Masami Masuda, Koji Kato, Yuri Terada, Yuki Shimizu, Mitsuaki Honma, Akihiro Imamoto, Tomoko Araya, Hayato Konno, Takuya Okanaga, Tomofumi Fujimura, Xiaoqing Wang, Mai Muramoto, Masahiro Kamoshida, Masatoshi Kohno, Yoshinao Suzuki, Tomoharu Hashiguchi, Tsukasa Kobayashi, Masashi Yamaoka, Ryuji Yamashita:
A Low Power 64 Gb MLC NAND-Flash Memory in 15 nm CMOS Technology. IEEE J. Solid State Circuits 51(1): 196-203 (2016) - 2015
- [c3]Mario Sako, Yoshihisa Watanabe, Takao Nakajima, Jumpei Sato, Kazuyoshi Muraoka, Masaki Fujiu, Fumihiro Kouno, Michio Nakagawa, Masami Masuda, Koji Kato, Yuri Terada, Yuki Shimizu, Mitsuaki Honma, Akihiro Imamoto, Tomoko Araya, Hayato Konno, Takuya Okanaga, Tomofumi Fujimura, Xiaoqing Wang, Mai Muramoto, Masahiro Kamoshida, Masatoshi Kohno, Yoshinao Suzuki, Tomoharu Hashiguchi, Tsukasa Kobayashi, Masashi Yamaoka, Ryuji Yamashita:
7.1 A low-power 64Gb MLC NAND-flash memory in 15nm CMOS technology. ISSCC 2015: 1-3 - 2013
- [j1]Kazushige Kanda, Noboru Shibata, Toshiki Hisada, Katsuaki Isobe, Manabu Sato, Yui Shimizu, Takahiro Shimizu, Takahiro Sugimoto, Tomohiro Kobayashi, Naoaki Kanagawa, Yasuyuki Kajitani, Takeshi Ogawa, Kiyoaki Iwasa, Masatsugu Kojima, Toshihiro Suzuki, Yuya Suzuki, Shintaro Sakai, Tomofumi Fujimura, Yuko Utsunomiya, Toshifumi Hashimoto, Naoki Kobayashi, Yuuki Matsumoto, Satoshi Inoue, Yoshinao Suzuki, Yasuhiko Honda, Yosuke Kato, Shingo Zaitsu, Hardwell Chibvongodze, Mitsuyuki Watanabe, Hong Ding, Naoki Ookuma, Ryuji Yamashita:
A 19 nm 112.8 mm2 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface. IEEE J. Solid State Circuits 48(1): 159-167 (2013) - 2012
- [c2]Noboru Shibata, Kazushige Kanda, Toshiki Hisada, Katsuaki Isobe, Manabu Sato, Yui Shimizu, Takahiro Shimizu, Takahiro Sugimoto, Tomohiro Kobayashi, Kazuko Inuzuka, Naoaki Kanagawa, Yasuyuki Kajitani, Takeshi Ogawa, J. Nakai, Kiyoaki Iwasa, Masatsugu Kojima, Toshihiro Suzuki, Yuya Suzuki, Shintaro Sakai, Tomofumi Fujimura, Yuko Utsunomiya, Toshifumi Hashimoto, Makoto Miakashi, Naoki Kobayashi, M. Inagaki, Yuuki Matsumoto, Satoshi Inoue, Yoshinao Suzuki, D. He, Yasuhiko Honda, Junji Musha, Masaki Nakagawa, Mitsuaki Honma, Naofumi Abiko, Mitsumasa Koyanagi, Masahiro Yoshihara, Kazumi Ino, Mitsuhiro Noguchi, Teruhiko Kamei, Yosuke Kato, Shingo Zaitsu, Hiroaki Nasu, Takuya Ariki, Hardwell Chibvongodze, Mitsuyuki Watanabe, Hong Ding, Naoki Ookuma, Ryuji Yamashita, G. Liang, Gertjan Hemink, Farookh Moogat, Cuong Trinh, Masaaki Higashitani, Tuan Pham, Kousuke Kanazawa:
A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface. ISSCC 2012: 422-424
2000 – 2009
- 2009
- [c1]Takuya Futatsuyama, Norihiro Fujita, Naoya Tokiwa, Yoshihiko Shindo, Toshiaki Edahiro, Teruhiko Kamei, Hiroaki Nasu, Makoto Iwai, Koji Kato, Yasuyuki Fukuda, Naoaki Kanagawa, Naofumi Abiko, Masahide Matsumoto, Toshihiko Himeno, Toshifumi Hashimoto, Yi-Ching Liu, Hardwell Chibvongodze, Takamitsu Hori, Manabu Sakai, Hong Ding, Yoshiharu Takeuchi, Hitoshi Shiga, Norifumi Kajimura, Yasuyuki Kajitani, Kiyofumi Sakurai, Kosuke Yanagidaira, Toshihiro Suzuki, Yuko Namiki, Tomofumi Fujimura, Man Mui, Hao Nguyen, Seungpil Lee, Alex Mak, Jeffery Lutze, Tooru Maruyama, Toshiharu Watanabe, Takahiko Hara, Shigeo Ohshima:
A 113mm2 32Gb 3b/cell NAND flash memory. ISSCC 2009: 242-243
Coauthor Index
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