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ORCIDMicroelectronics Journal, Volume 39
Volume 39, Number 1, January 2008
- Ahra Lee, Hyoungho Ko
, Dong-Il Cho, Gunn Hwang:
Non-ideal behavior of a driving resonator loop in a vibratory capacitive microgyroscope. 1-6 - O. Saad, M. Baira, R. Ajjel, Hichem Maaref, B. Salem, G. Brémond, M. Gendry:
Capacitance-voltage analysis of InAs quantum dots grown on InAlAs/InP(0 0 1). 7-11 - Peiqing Luo, Zhibin Zhou, Youjie Li, Shuquan Lin, Xiaoming Dou, Rongqiang Cui:
Effects of deposition pressure on the microstructural and optoelectrical properties of B-doped hydrogenated nanocrystalline silicon (nc-Si: H) thin films grown by hot-wire chemical vapor deposition. 12-19 - X. H. Wang, X. L. Wang, C. Feng, C. B. Yang, B. Z. Wang, J. X. Ran, H. L. Xiao, C. M. Wang, J. X. Wang:
Hydrogen sensors based on AlGaN/AlN/GaN HEMT. 20-23 - Yink Khai Teh, Faisal Mohd-Yasin, Florence Choong, Mamun Bin Ibne Reaz:
Design of adaptive supply voltage for sub-threshold logic based on sub-1 V bandgap reference circuit. 24-29 - Mustafa Gök, Metin Mete Özbilen:
Multi-functional floating-point MAF designs with dot product support. 30-43 - Yuehua Wu, Grigory Panaitov, Yi Zhang, Norbert Klein:
Design and fabrication of in-plane resonant microcantilevers. 44-48 - Hongming Zhou, Guiguang Xiong:
Exciton enhancement effect on the third harmonic generation in ZnS/CdSe quantum dot quantum well. 49-52 - Shuqi Zheng:
Investigation of the degradation of smooth SiGe epitaxial layer on Si substrate. 53-56 - Jong-Seok Lee, Ey Goo Kang, Man Young Sung:
Shielding region effects on a trench gate IGBT. 57-62 - Abdelkader Aissat, Said Nacer, M. Bensebti, Jean-Pierre Vilcot:
Investigation on the emission wavelength of GaInNAs/GaAs strained compressive quantum wells on GaAs substrates. 63-66 - Chih Chin Yang, Yan Kuin Su:
Well-defined electrical properties of high-strain resonant interband tunneling structure. 67-69 - Shuti Li, Guanghan Fan, Huiqing Sun, Shuwen Zheng:
The influence of thermal annealing to the characteristics of AlGaInP/GaInP multiple quantum wells light-emitting diode wafers. 70-73 - Fengchun Jiang, Congxin Xia, Shuyi Wei:
Exciton states in wurtzite and zinc-blende InGaN/GaN coupled quantum dots. 74-79 - H. Benmaza, B. Akkal, Hamza Abid, Jean-Marie Bluet, Macho Anani, Z. Bensaad:
Barrier height inhomogeneities in a Ni/SiC-6H Schottky n-type diode. 80-84 - Shiguang Shang, Changchun Zhu, Weihua Liu:
Enhanced field emission from printed CNTs by high-temperature sintering and plasma bombarding in hydrogen. 85-89 - Chih Chin Yang, Yan Kuin Su:
High performance aluminum arsenic intraband resonant microwave devices. 90-93 - Ho Seob Kim, Seungjoon Ahn, Dae Wook Kim, Tae-Sik Oh, Seong Joon Ahn:
Efficient electron beam condensing for low-energy microcolumn lithography. 94-98 - Abdesselam Hocini, T. Boumaza, Mohamed Bouchemat, F. Royer, D. Jamon, J. J. Rousseau:
Birefringence in magneto-optical rib waveguides made by SiO2/TiO2 doped with gamma-Fe2O3. 99-102 - Jordi Sacristán-Riquelme, Fredy Segura-Quijano, M. Teresa Osés:
Simple and efficient inductive telemetry system with data and power transmission. 103-111 - Sang Hyun Park, Mikko Karppinen, Quan Le, Bin Young Yoon:
Burst-mode optical transmitter with DC-coupled burst-enable signal for 2.5-Gb/s GPON system. 112-116 - Chua-Chin Wang, Chi-Chun Huang, Ching-Li Lee, Chien-Chih Hung, Li-Pin Lin:
A single-chip CMOS IF-band converter design for DVB-T receivers. 117-129 - Chua-Chin Wang, Tzung-Je Lee, U. Fat Chio, Yu-Tzu Hsiao, Jia-Jin Chen:
A 570-kbps ASK demodulator without external capacitors for low-frequency wireless bio-implants. 130-136 - Ramon Tortosa Navas, José M. de la Rosa, Francisco V. Fernández, Ángel Rodríguez-Vázquez:
Clock jitter error in multi-bit continuous-time sigma-delta modulators with non-return-to-zero feedback waveform. 137-151 - Gustavo A. Ruiz, Mercedes Granda:
Efficient implementation of 3X for radix-8 encoding. 152-159
Volume 39, Number 2, February 2008
- Adrian M. Ionescu, Liliana Diaz Olavarrieta:
Editorial. 161-164 - I. Takesue, Junji Haruyama, N. Kobayashi, Shohei Chiashi, S. Maruyama, Toshiki Sugai, Hisanori Shinohara:
High-Tc superconductivity in entirely end-bonded multi-walled carbon nanotubes. 165-170 - Hiroshi Mizuta, Shunri Oda:
Bottom-up approach to silicon nanoelectronics. 171-176 - Konstantin K. Likharev:
CMOL: Second life for silicon. 177-183 - Samuel Dennler, Marie-Claire Fromen, Marie-José Casanove, Gustavo M. Pastor, Joseph Morillo, J. Hafner:
Towards atomic-scale design: A theoretical investigation of magnetic nanoparticles and ultrathin films. 184-189 - Mustapha Hamdi, Antoine Ferreira, Gaurav Sharma, Constantinos Mavroidis:
Prototyping bio-nanorobots using molecular dynamics simulation and virtual reality. 190-201 - Valery A. Petrenko:
Landscape phage as a molecular recognition interface for detection devices. 202-207 - Amitesh Maiti:
Multiscale modeling with carbon nanotubes. 208-221 - J. Mizubayashi, Junji Haruyama, I. Takesue, T. Okazaki, Hisanori Shinohara, Y. Harada, Y. Awano:
Atom-like behaviors and orbital-related Tomonaga-Luttinger liquids in carbon nano-peapod quantum dots. 222-227 - H. C. Chiamori, J. W. Brown, E. V. Adhiprakasha, E. T. Hantsoo, J. B. Straalsund, N. A. Melosh, Beth L. Pruitt:
Suspension of nanoparticles in SU-8: Processing and characterization of nanocomposite polymers. 228-236 - A. Medvid', A. Mychko, P. Onufrievs:
Self-organization of a 2D lattice on a surface of Ge single crystal after irradiation with Nd: YAG laser. 237-240 - Héctor Pettenghi, Maria J. Avedillo, José M. Quintana:
Using multi-threshold threshold gates in RTD-based logic design: A case study. 241-247
- D. C. Kulkarni, S. P. Patil, Vijaya Puri:
Properties of NixZn(1-x)Fe2O4 thick films at microwave frequencies. 248-252 - A. A. M. Farag, A. Ashery, F. S. Terra:
Fabrication and electrical characterization of n-InSb on porous Si heterojunctions prepared by liquid phase epitaxy. 253-260 - Ali Jahanian, Morteza Saheb Zamani:
Using metro-on-chip in physical design flow for congestion and routability improvement. 261-274 - Koushik K. Das, Ching-Te Chuang, Richard B. Brown:
Reducing parasitic BJT effects in partially depleted SOI digital logic circuits. 275-285 - Matthias Völker, Johann Hauer, Josef Sauerer:
Prospect of the future of switched-current circuits with regard to future CMOS technologies. 286-292 - Ebrahim Farshidi, Sayed Masoud Sayedi:
A 1.2 V current-mode true RMS-DC converter based on the floating gate MOS translinear principle. 293-298
- Jae-sik Lee, Michael Mayer, Norman Y. Zhou, S. J. Hong:
Erratum to "Iterative optimization of tail breaking force of 1 mil wire thermosonic ball bonding processes and the influence of plasma cleaning": [Microelectronics Journal 38 (2007) 842-847]. 299
Volume 39, Numbers 3-4, March - April 2008
- Mohamed Henini, Isaac Hernández-Calderón:
Preface. 301 - M. Geller, Friedhelm Hopfer, Dieter Bimberg:
Nanostructures for nanoelectronics: No potential for room temperature applications? 302-306 - R. A. Rupani, Siddhartha Ghosh, X. Su, P. Bhattacharya:
Low frequency noise spectroscopy in InAs/GaAs resonant tunneling quantum dot infrared photodetectors. 307-313 - S. J. Chorley, C. G. Smith, Francisco Perez-Martinez, Jonathan Prance, Paola Atkinson, David A. Ritchie, G. A. C. Jones:
Single electron transport in a free-standing quantum dot. 314-317 - Marek Korkusinski, P. Hawrylak, Michal Zielinski, W. Sheng, Gerhard Klimeck:
Building semiconductor nanostructures atom by atom. 318-326 - Hirotaka Kobayashi, Hidekazu Kumano, Michiaki Endo, Masafumi Jo, Ikuo Suemune, Hirotaka Sasakura, S. Adachi, S. Muto:
Highly circular-polarized single photon generation from a single quantum dot at zero magnetic field. 327-330 - Per-Olof Holtz, Evgenii S. Moskalenko, Mats Larsson, K. F. Karlsson, W. V. Schoenfeld, P. M. Petroff:
Effects of external fields on the excitonic emission from single InAs/GaAs quantum dots. 331-334 - Raphael Tsu:
Revisiting tunneling via Si-quantum dots. 335-343 - Ikuo Suemune, Tatsushi Akazaki, Kazunori Tanaka, Masafumi Jo, Katsuhiro Uesugi, Michiaki Endo, Hidekazu Kumano, Eiichi Hanamura:
Role of Cooper pairs for the generation of entangled photon pairs from single quantum dots. 344-347 - Z. Barticevic, Monica Pacheco, Carlos Alberto Duque, Luiz Eduardo Oliveira:
Magnetoexciton states and diamagnetic shifts in GaAs-Ga1-xAlxAs quantum dots/ultrathin quantum wells under growth-direction magnetic fields. 348-350 - Vyacheslav Alexander Elyukhin:
On way to ideal quantum dots. 351-353 - R. Franco, Jereson Silva Valencia, M. S. Figueira:
Linear conductance through parallel coupled quantum dots. 354-358 - V. Mlinar, François M. Peeters:
Tuning of the optical properties of [11k] grown InAs quantum dots by the capping layer. 359-361 - Nathan Bickel, Patrick LiKamWa:
Etched quantum dots for all-optical and electro-optical switches. 362-364 - M. D. Blumenthal, B. Kaestner, L. Li, S. Giblin, T. J. B. M. Janssen, M. Pepper, D. Anderson, G. Jones, David A. Ritchie:
Electron pumping through quantum dots defined in parallel etched quantum wires. 365-368 - Jong Chang Yi:
Miniband properties of superlattice quantum dot arrays fabricated by the edge-defined nanowires. 369-374 - Karel Král:
Non-delta-function electronic spectral densities in individual quantum dots. 375-377 - I. D. Mikhailov, L. F. García, Jairo Humberto Marín:
Vertically coupled quantum dots charged by exciton. 378-382 - S. T. Pérez-Merchancano, R. Franco, Jereson Silva Valencia:
Impurity states in a spherical GaAs-Ga1-x AlxAs quantum dots: Effects of hydrostatic pressure. 383-386 - Y. Valenzuela, R. Franco, Jereson Silva Valencia:
Lateral Fano resonance and Kondo effect in the strong coupling regime of a quantum dot embedded in a quantum wire. 387-389 - N. Porras-Montenegro, C. A. Perdomo-Leiva, E. Reyes-Gómez, H. S. Brandi, L. E. Oliveira:
Effect of the Dresselhaus spin splitting on the effective Landé g-factor in GaAs-(Ga, Al)As quantum wells under in-plane or growth-direction magnetic fields. 390-393 - Pedro Pereyra, Arturo Robledo-Martinez, M. Morales-Luna:
The effect of complex and negative indices in the transmission of electromagnetic waves through superlattices. 394-397 - Luiz Eduardo Oliveira, M. de Dios-Leyva, Carlos Alberto Duque:
Direct and indirect exciton states in GaAs-(Ga, Al)As double quantum wells under crossed electric and magnetic fields. 398-401 - F. J. Culchac, N. Porras-Montenegro, J. C. Granada, A. Latgé:
Energy spectrum in a concentric double quantum ring of GaAs-(Ga, Al)As under applied magnetic fields. 402-406 - Carlos Alberto Duque, M. de Dios-Leyva, Luiz Eduardo Oliveira:
Exciton diamagnetic shift in GaAs/Ga1-xAlxAs quantum wells under in-plane magnetic fields. 407-410 - Ludvik Smrcka, Nataliya A. Goncharuk, P. Svoboda, P. Vasek, Yu. Krupko, W. Wegscheider:
Electron magnetotransport in GaAs/AlGaAs superlattices with weak and strong inter-well coupling. 411-413 - X. A. Pichardo, V. M. González-Robles, S. J. Vlaev:
Mean lifetimes of quasi-bound electronic states in rectangular GaAs/AlGaAs barriers. 414-417 - T. Kryshtab, José A. Andraca Adame, L. V. Borkovska, N. O. Korsunska, Ye. F. Venger, Yu. G. Sadofyev:
Effect of CdTe monolayer insertion on CdZnTe/ZnTe quantum well characteristics. 418-422 - Isaac Rodríguez-Vargas, O. Y. Sánchez-Barbosa, D. A. Contreras-Solorio, S. J. Vlaev:
Miniband structure of parabolic GaAs/AlxGa1-xAs superlattices. 423-426 - J. C. Salcedo-Reyes:
Kinematic study of refraction properties of an opal-based photonic crystal. 427-430 - E. Tangarife, S. Y. López, M. de Dios-Leyva, Luiz Eduardo Oliveira, Carlos Alberto Duque:
Effects of hydrostatic pressure and crossed electric and magnetic fields on shallow-donor states in GaAs/Ga1-xAlxAs quantum wells. 431-434 - D. A. Contreras-Solorio, Jesus Madrigal-Melchor, Stoyan Jelev-Vlaev, A. Enciso, H. Hernández-Cocoletzi:
Study of the electronic fundamental transition of zincblende InN/InGaN quantum wells. 435-437 - Isaac Rodríguez-Vargas, Miguel Eduardo Mora-Ramos, Carlos Alberto Duque:
Influence of the hydrostatic pressure onto the electronic and transport properties of n-type double delta-doped GaAs quantum wells. 438-441 - Stoyan Jelev-Vlaev, Jesus Madrigal-Melchor, V. M. González-Robles, D. A. Contreras-Solorio:
Quasi-bound electronic states in parabolic GaAs/AlGaAs quantum wells and barriers. 442-446 - M. R. López, G. González de la Cruz:
Dependence of the photoluminescence energy and carrier lifetime of the carrier density in nitride quantum well. 447-449 - S. M. Ramos-Arteaga, N. Porras-Montenegro, Gerardo J. Vázquez, Marcelo del Castillo-Mussot:
Effects of geometry, applied hydrostatic pressure and magnetic field on the electron-hole transition energy in a GaAs-Ga1-xAlxAs pillbox immersed in a system of Ga1-yAlyAs. 450-454 - Andrey Chaves, J. Costa e Silva, José Alexander de King Freire, Gil de Aquino Farias:
The role of surface roughness on the electron confinement in semiconductor quantum rings. 455-458 - E. Moncada, F. Segovia, J. C. Granada:
Effect of eccentricity and boundary conditions on the edge superconducting states in mesoscopic rings. 459-462 - P. C. M. Machado, F. A. P. Osório, A. N. Borges:
Polaronic effects on the collective excitation energies in a quantum wire. 463-465 - Pablo Villamil, Carlos Cabra, N. Porras-Montenegro:
Polaron effects on the energy of a hydrogenic donor impurity in GaAs-(Ga, Al)As quantum-well wires. 466-471 - Pedro Alfaro, Miguel Cruz, Chumin Wang:
Vibrational states in low-dimensional structures: An application to silicon quantum wires. 472-474 - M. Rangus, Maja Remskar, A. Mrzel:
Preparation of vertically aligned bundles of Mo6S9-xIx (4.5x<6) nanowires. 475-477 - Detlev Grützmacher, Li Zhang, Lixin Dong, Dominik J. Bell, Bradley J. Nelson, A. Prinz, Elisabeth Ruh:
Ultra flexible SiGe/Si/Cr nanosprings. 478-481 - J. Torres, H. M. Martinez, José Edgar Alfonso, L. D. López C:
Optoelectronic study in porous silicon thin films. 482-484 - Moritz Brehm, T. Suzuki, Zhenyang Zhong, Thomas Fromherz, Julian Stangl, G. Hesser, Stefan Birner, Friedrich Schäffler, Günther Bauer:
Bandstructure and photoluminescence of SiGe islands with controlled Ge concentration. 485-488 - Godofredo García Salgado, R. Hernández, Javier Martínez, Tomás Díaz, Héctor Juárez, Enrique Rosendo, Reina Galeazzi, A. García, G. Juárez:
Fabrication, characterization, and analysis of photodetectors metal-porous silicon with different geometry and thickness of the porous silicon layer. 489-493 - M. Morales Rodríguez, J. M. Rivas, A. I. Diaz Cano, Tetyana V. Torchynska, J. Palacios Gomez, G. G. Gasga, Sergio Jiménez-Sandoval, Marina Mynbaeva:
Comparative investigation of optical and structural properties of porous SiC. 494-498 - Danilo R. Huanca, Francisco Javier Ramirez Fernandez, Walter J. Salcedo:
Porous silicon optical cavity structure applied to high sensitivity organic solvent sensor. 499-506 - A. I. Diaz Cano, T. V. Torchynska, J. E. Urbina-Alvarez, Gabriel Romero-Paredes Rubio, Sergio Jiménez-Sandoval, Y. V. Vorobiev:
Porous SiC layers on Si nanowire surface. 507-511 - Andreas Fissel, Apurba Laha, E. Bugiel, D. Kühne, M. Czernohorsky, Rytis Dargis, H. Jörg Osten:
Silicon in functional epitaxial oxides: A new group of nanostructures. 512-517 - Serguei Novikov, J. Sinkkonen, Timur Nikitin, L. Khriachtchev, M. Räsänen, E. Haimi:
Free-standing SiO2 films containing Si nanocrystals directly suitable for transmission electron microscopy. 518-522 - David Guzmán, Miguel Cruz, Chumin Wang:
Electronic and optical properties of ordered porous germanium. 523-525 - Mi Jung, Seok Lee, Young Tae Byun, Young Min Jhon, Sun Ho Kim, Deok-Ha Woo, Sun-il Mho:
Characteristics and fabrication of nanohole array on InP semiconductor substrate using nanoporous alumina. 526-528 - Rodrigo Segura, Marcos Flores, Samuel Hevia, Patricio Häberle:
Synthesis, characterization and spectroscopy of carbon based nanoscale materials. 529-533 - J. Milton Pereira Jr., P. Vasilopoulos, François M. Peeters:
Resonant tunneling in graphene microstructures. 534-536 - Luis Rosales, Pedro A. Orellana, Z. Barticevic, Monica Pacheco:
Transport properties of graphene nanoribbon heterostructures. 537-540 - T. H. Ghong, T. J. Kim, S. Y. Lee, Y. D. Kim, J. J. Kim, Hisao Makino, T. Yao:
Vacuum UV spectroscopic ellipsometry study on Ga1-xCrxN(0<=x<=0.1) alloy films. 541-543 - O. Arnache, Axel Hoffmann, D. Giratá:
Effect of Fe doping on structural and magnetic properties of La2/3Ca1/3Mn1-yFeyO3 (y=0-0.03) thin films. 544-547 - L. C. Moreno, Doris Cadavid, J. E. Rodríguez:
Thermoelectric power factor of LSCoO compounds. 548-550 - Ana Martínez, J. Morales, Pedro Salas, Carlos Angeles-Chávez, Luis A. Díaz-Torres, E. De la Rosa:
Synthesis and photoluminescence of Y2O3: Yb3+-Er3+ nanofibers. 551-555 - O. Morán, E. Baca, F. A. Pérez:
Depression of the superconducting critical temperature and finite-size scaling relation in YBa2Cu3O7-delta/La2/3Ca1/3MnO3 bilayers. 556-559 - B. Aguilar, O. Navarro, M. Avignon:
Spin polarization in ordered and disordered double-perovskites. 560-562 - Miguel Grizalez, M. Jairo Arbey Rodríguez, Jesús Heiras, Pedro Prieto:
Tb0.5Bi0.5MnO3: New material. A DFT study. 563-565 - Min Kai Lee, E. V. Charnaya, Cheng Tien:
Self-diffusion slowdown in liquid indium and gallium metals under nanoconfinement. 566-569 - Yong Woo Jung, Jae Jin Yoon, Jun Seok Byun, Young Dong Kim:
Dielectric function analysis of ZnSe and CdSe using parametric semiconductor model. 570-572 - F. A. P. Osório, R. B. de Almeida, A. N. Borges, P. C. M. Machado:
Magnetopolaron effects on the donor states in InP. 573-575 - S. T. Pérez-Merchancano, G. E. Marques, L. E. Bolivar-Marinez:
Optical transitions in new trends organic materials. 576-578 - G. Elizabeth Escorcia-Salas, José Sierra Ortega, M. Jairo Arbey Rodríguez:
Influence of Zr concentration on crystalline structure and its electronic properties in the new ZrxAl1-xN compound in wurtzite phase: An ab initio study. 579-581 - Adriana E. Martínez-Cantón, Miguel García-Rocha, N. Garro, Isaac Hernández-Calderón, Andres Cantarero, R. Ortega-Martínez:
Study of the recombination around the excitonic region of MBE ZnSe: Cl thin films. 582-585 - Crisóforo Morales, Héctor Juárez, Tomás Díaz, Yasuhiro Matsumoto, Enrique Rosendo, Godofredo Garcia, M. Rubin, F. Mora, Mauricio Pacio, A. García:
Low temperature SnO2 films deposited by APCVD. 586-588