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Publication search results
found 301 matches
- 2008
- Jan Ackaert, R. Charavel, K. Dhondt, B. Vlachakis, Luc De Schepper, M. Millecam, E. Vandevelde, P. Bogaert, A. Iline, Eddy De Backer, Alexandru Vlad, Jean-Pierre Raskin:
MIMC reliability and electrical behavior defined by a physical layer property of the dielectric. Microelectron. Reliab. 48(8-9): 1553-1556 (2008) - Parhat Ahmet, Kentaro Nakagawa, Kuniyuki Kakushima, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai:
Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack. Microelectron. Reliab. 48(11-12): 1769-1771 (2008) - Thomas Aichinger, Michael Nelhiebel, Tibor Grasser:
On the temperature dependence of NBTI recovery. Microelectron. Reliab. 48(8-9): 1178-1184 (2008) - Muhammad Ashraful Alam:
Reliability- and process-variation aware design of integrated circuits. Microelectron. Reliab. 48(8-9): 1114-1122 (2008) - Andreas Altes, Rainer Tilgner, Markus Reissner, Grazyna Steckert, Gerald Neumann:
Advanced thermal failure analysis and reliability investigations - Industrial demands and related limitations. Microelectron. Reliab. 48(8-9): 1273-1278 (2008) - Masazumi Amagai:
A study of nanoparticles in Sn-Ag based lead free solders. Microelectron. Reliab. 48(1): 1-16 (2008) - Stefano Aresu, Reinhard Pufall, Michael Goroll, Wolfgang Gustin:
NBTI on smart power technologies: A detailed analysis of two concurrent effects using a re-examined on-the-fly technique. Microelectron. Reliab. 48(8-9): 1310-1312 (2008) - N. Arpatzanis, Argyrios T. Hatzopoulos, Dimitrios H. Tassis, C. A. Dimitriadis, François Templier, Maher Oudwan, G. Kamarinos:
Degradation of n-channel a-Si: H/nc-Si: H bilayer thin-film transistors under DC electrical stress. Microelectron. Reliab. 48(4): 531-536 (2008) - Elena Atanassova, Albena Paskaleva, Nenad Novkovski:
Effects of the metal gate on the stress-induced traps in Ta2O5/SiO2 stacks. Microelectron. Reliab. 48(4): 514-525 (2008) - Elena Atanassova, Ninoslav Stojadinovic, Albena Paskaleva:
Degradation behavior of Ta2O5 stacks and its dependence on the gate electrode. Microelectron. Reliab. 48(8-9): 1193-1197 (2008) - A. Aubert, Lionel Dantas de Morais, J. P. Rebrasse:
Laser decapsulation of plastic packages for failure analysis: Process control and artefact investigations. Microelectron. Reliab. 48(8-9): 1144-1148 (2008) - Srimanta Baishya, Abhijit Mallik, Chandan Kumar Sarkar:
A threshold voltage model for short-channel MOSFETs taking into account the varying depth of channel depletion layers around the source and drain. Microelectron. Reliab. 48(1): 17-22 (2008) - Viorel Banu, Pierre Brosselard, Xavier Jordà, Josep Montserrat, Philippe Godignon, José Millán:
Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress. Microelectron. Reliab. 48(8-9): 1444-1448 (2008) - Frédéric Barbier, Sébastien Jacqueline:
ESD sensitivity investigation on a wide range of high density embedded capacitors. Microelectron. Reliab. 48(8-9): 1422-1426 (2008) - Eduardas Bareisa, Vacius Jusas, Kestutis Motiejunas, Rimantas Seinauskas:
Test generation at the algorithm-level for gate-level fault coverage. Microelectron. Reliab. 48(7): 1093-1101 (2008) - A. Belarni, Mohamed Lamhamdi, Patrick Pons, Laurent Boudou, Jean Guastavino, Y. Segui, George J. Papaioannou, Robert Plana:
Kelvin probe microscopy for reliability investigation of RF-MEMS capacitive switches. Microelectron. Reliab. 48(8-9): 1232-1236 (2008) - O. Belashov, Jan K. Spelt:
Thermal stress concentration factors for defects in plated-through-vias. Microelectron. Reliab. 48(2): 225-244 (2008) - S. Bendida, J. J. Koning, J. J. M. Bontemps, J. T. M. van Beek, D. Wu, Marcel A. J. van Gils, S. Nath:
Temperature stability of a piezoresistive MEMS resonator including self-heating. Microelectron. Reliab. 48(8-9): 1227-1231 (2008) - M. K. Bera, Chinmay K. Maiti:
Reliability of ultra thin ZrO2 films on strained-Si. Microelectron. Reliab. 48(5): 682-692 (2008) - Gaelle Beylier, Sylvie Bruyère, Darcy Benoit, Gérard Ghibaudo:
Impact of silicon nitride CESL on NLDEMOS transistor reliability. Microelectron. Reliab. 48(8-9): 1539-1543 (2008) - Partha Bhattacharyya, Palash Kumar Basu, Biplob Mondal, H. Saha:
A low power MEMS gas sensor based on nanocrystalline ZnO thin films for sensing methane. Microelectron. Reliab. 48(11-12): 1772-1779 (2008) - Roland Biberger, Guenther Benstetter, Thomas Schweinböck, Peter Breitschopf, Holger Goebel:
Intermittent-contact scanning capacitance microscopy versus contact mode SCM applied to 2D dopant profiling. Microelectron. Reliab. 48(8-9): 1339-1342 (2008) - Bjoern Boehme, Klaus-Jürgen Wolter:
Study of temperature dependent properties of organic substrate materials. Microelectron. Reliab. 48(6): 876-880 (2008) - Peter Borthen, Gerhard K. M. Wachutka:
Testing semiconductor devices at extremely high operating temperatures. Microelectron. Reliab. 48(8-9): 1440-1443 (2008) - M. L. Bourqui, Laurent Béchou, Olivier Gilard, Yannick Deshayes, Pamela Del Vecchio, L. S. How, F. Rosala, Yves Ousten, André Touboul:
Reliability investigations of 850 nm silicon photodiodes under proton irradiation for space applications. Microelectron. Reliab. 48(8-9): 1202-1207 (2008) - Mohsine Bouya, Nathalie Malbert, Nathalie Labat, D. Carisetti, Philippe Perdu, J. C. Clement, Benoit Lambert, M. Bonnet:
Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques. Microelectron. Reliab. 48(8-9): 1366-1369 (2008) - Jeroen van den Brand, Johan de Baets, T. van Mol, Andreas Dietzel:
Systems-in-foil - Devices, fabrication processes and reliability issues. Microelectron. Reliab. 48(8-9): 1123-1128 (2008) - Giovanni Breglio, Andrea Irace, Ettore Napoli, Michele Riccio, Paolo Spirito, K. Hamada, T. Nishijima, T. Ueta:
Detection of localized UIS failure on IGBTs with the aid of lock-in thermography. Microelectron. Reliab. 48(8-9): 1432-1434 (2008) - H. El Brouji, Olivier Briat, Jean-Michel Vinassa, Nicolas Bertrand, Eric Woirgard:
Comparison between changes of ultracapacitors model parameters during calendar life and power cycling ageing tests. Microelectron. Reliab. 48(8-9): 1473-1478 (2008) - Muhammad Faiz Bukhori, Scott Roy, Asen Asenov:
Statistical aspects of reliability in bulk MOSFETs with multiple defect states and random discrete dopants. Microelectron. Reliab. 48(8-9): 1549-1552 (2008)
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