"Reliability investigations of 850 nm silicon photodiodes under proton ..."

M. L. Bourqui et al. (2008)

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DOI: 10.1016/J.MICROREL.2008.07.012

access: closed

type: Journal Article

metadata version: 2020-02-22

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M. L. Bourqui, Laurent Béchou, Olivier Gilard, Yannick Deshayes, Pamela Del Vecchio, L. S. How, F. Rosala, Yves Ousten, André Touboul:
Reliability investigations of 850 nm silicon photodiodes under proton irradiation for space applications. Microelectron. Reliab. 48(8-9): 1202-1207 (2008)

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