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Publication search results
found 370 matches
- 2007
- W. W. (Bill) Abadeer:
Effect of stress voltages on voltage acceleration and lifetime projections for ultra-thin gate oxides. Microelectron. Reliab. 47(2-3): 395-400 (2007) - Carmine Abbate, Giovanni Busatto, Luigi Fratelli, Francesco Iannuzzo, B. Cascone, Roberta Manzo:
The robustness of series-connected high power IGBT modules. Microelectron. Reliab. 47(9-11): 1746-1750 (2007) - Stephan Abermann, J. K. Efavi, G. Sjöblom, Max C. Lemme, Jörgen Olsson, Emmerich Bertagnolli:
Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-kappa dielectrics. Microelectron. Reliab. 47(4-5): 536-539 (2007) - Jérôme Adrian, Nicolas Rodriguez, Fabien Essely, Gérald Haller, Catherine Grosjean, Alain Portavoce, Christophe Girardeaux:
Investigation of a new method for dopant characterization. Microelectron. Reliab. 47(9-11): 1599-1603 (2007) - Kerem Akarvardar, Abdelkarim Mercha, Eddy Simoen, Vaidyanathan Subramanian, Cor Claeys, Pierre Gentil, Sorin Cristoloveanu:
High-temperature performance of state-of-the-art triple-gate transistors. Microelectron. Reliab. 47(12): 2065-2069 (2007) - Muhammad Ashraful Alam, Haldun Kufluoglu, Dhanoop Varghese, S. Mahapatra:
A comprehensive model for PMOS NBTI degradation: Recent progress. Microelectron. Reliab. 47(6): 853-862 (2007) - K. W. Alt, R. E. Yeats, C. P. Hutchinson, D. K. Kuhn, T. S. Low, M. Iwamoto, M. E. Adamski, R. L. Shimon, Timothy E. Shirley, M. Bonse, F. G. Kellert, D. C. D'Avanzo:
Determination of transistor infant failure probability in InGaP/GaAs heterojunction bipolar technology. Microelectron. Reliab. 47(8): 1175-1179 (2007) - M. Alwan, B. Beydoun, K. Ketata, M. Zoaeter:
Gate charge behaviors in N-channel power VDMOSFETs during HEF and PBT stresses. Microelectron. Reliab. 47(9-11): 1406-1410 (2007) - Esteve Amat, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, James H. Stathis:
Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions. Microelectron. Reliab. 47(4-5): 544-547 (2007) - C. Andersson, D. R. Andersson, Per-Erik Tegehall, Johan Liu:
Effect of different temperature cycling profiles on the crack initiation and propagation of Sn-3.5Ag wave soldered solder joints. Microelectron. Reliab. 47(2-3): 266-272 (2007) - Stefano Aresu, Werner Kanert, Reinhard Pufall, Michael Goroll:
Exceptional operative gate voltage induces negative bias temperature instability (NBTI) on n-type trench DMOS transistors. Microelectron. Reliab. 47(9-11): 1416-1418 (2007) - Mohd Khairuddin Md Arshad, Azman Jalar, Ibrahim Ahmad:
Characterization of parasitic residual deposition on passivation layer in electroless nickel immersion gold process. Microelectron. Reliab. 47(7): 1120-1126 (2007) - Reza Asgary, Karim Mohammadi, Mark Zwolinski:
Using neural networks as a fault detection mechanism in MEMS devices. Microelectron. Reliab. 47(1): 142-149 (2007) - Elena Atanassova, Albena Paskaleva:
Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs. Microelectron. Reliab. 47(6): 913-923 (2007) - Elena Atanassova, D. Spassov, Albena Paskaleva:
Metal gates and gate-deposition-induced defects in Ta2O5 stack capacitors. Microelectron. Reliab. 47(12): 2088-2093 (2007) - C. N. Mc Auley, Andreas Rummel, F. W. Keating, Stephan Kleindiek:
3D failure analysis in depth profiles of sequentially made FIB cuts. Microelectron. Reliab. 47(9-11): 1595-1598 (2007) - Nicolas Baboux, C. Busseret, Carole Plossu, Philippe Boivin:
Peculiarities of electron tunnel injection to the drain of EEPROMs. Microelectron. Reliab. 47(4-5): 631-634 (2007) - Manoubi Auguste Bahi, Pascal Lecuyer, Hélène Frémont, Jean-Pierre Landesman:
Sequential environmental stresses tests qualification for automotive components. Microelectron. Reliab. 47(9-11): 1680-1684 (2007) - Giacomo Barletta, Giuseppe Currò:
Evaluation of the generation mechanisms at surface and in the bulk of the silicon by current transient technique. Microelectron. Reliab. 47(4-5): 810-814 (2007) - Davide Barlini, Mauro Ciappa, Michel Mermet-Guyennet, Wolfgang Fichtner:
Measurement of the transient junction temperature in MOSFET devices under operating conditions. Microelectron. Reliab. 47(9-11): 1707-1712 (2007) - Felix Beaudoin, Kevin Sanchez, Philippe Perdu:
Dynamic laser stimulation techniques for advanced failure analysis and design debug applications. Microelectron. Reliab. 47(9-11): 1517-1522 (2007) - Mohamed Ali Belaïd, K. Ketata, M. Gares, Karine Mourgues, Mohamed Masmoudi, Jérôme Marcon:
Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests. Microelectron. Reliab. 47(1): 59-64 (2007) - Lynda Benbahouche, A. Merabet, A. Zegadi:
Numerical analysis and comparative study of short circuit stress in IGBTs devices (IR, IXYS). Microelectron. Reliab. 47(9-11): 1773-1778 (2007) - Adel Benmansour, Stephane Azzopardi, Jean-Christophe Martin, Eric Woirgard:
Trench IGBT failure mechanisms evolution with temperature and gate resistance under various short-circuit conditions. Microelectron. Reliab. 47(9-11): 1730-1734 (2007) - Adel Benmansour, Stephane Azzopardi, Jean-Christophe Martin, Eric Woirgard:
A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D physically based device simulation. Microelectron. Reliab. 47(9-11): 1800-1805 (2007) - Ronen A. Berechman, Boris Revzin, Yoram Shapira:
Correlating gate sinking and electrical performance of pseudomorphic high electron mobility transistors. Microelectron. Reliab. 47(8): 1202-1207 (2007) - Corinne Bestory, François Marc, Hervé Levi:
Statistical analysis during the reliability simulation. Microelectron. Reliab. 47(9-11): 1353-1357 (2007) - Gaelle Beylier, Sylvie Bruyère, Darcy Benoit, Gérard Ghibaudo:
Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride. Microelectron. Reliab. 47(4-5): 743-747 (2007) - Dhruv Bhate, Martin L. Dunn:
Adhesion of arbitrary-shaped thin-film microstructures. Microelectron. Reliab. 47(12): 2014-2024 (2007) - Stephane Bianic, Stéphanie Allemand, Grégory Kerrosa, Pascal Scafidi, Didier Renard:
Advanced backside failure analysis in 65 nm CMOS technology. Microelectron. Reliab. 47(9-11): 1550-1554 (2007)
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