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Nobuyuki Sugii
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Journal Articles
- 2016
- [j16]M. S. Hadi, Nobuyuki Sugii
, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima:
Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes. Microelectron. Reliab. 63: 42-45 (2016) - 2015
- [j15]Minh-Thien Hoang
, Nobuyuki Sugii
, Koichiro Ishibashi:
A 27.6 µW 315 MHz low-complexity OOK receiver with on-off RF front-end. IEICE Electron. Express 12(7): 20150206 (2015) - [j14]Koichiro Ishibashi, Nobuyuki Sugii
, Shiro Kamohara, Kimiyoshi Usami, Hideharu Amano, Kazutoshi Kobayashi, Cong-Kha Pham
:
A Perpetuum Mobile 32bit CPU on 65nm SOTB CMOS Technology with Reverse-Body-Bias Assisted Sleep Mode. IEICE Trans. Electron. 98-C(7): 536-543 (2015) - [j13]Toshitsugu Sakamoto, Yukihide Tsuji
, Munehiro Tada
, Hideki Makiyama, Takumi Hasegawa, Yoshiki Yamamoto, Shinobu Okanishi, Keiichi Maekawa, Naoki Banno, Makoto Miyamura, Koichiro Okamoto, Noriyuki Iguchi, Hidekazu Oda, Shiro Kamohara, Yasushi Yamagata, Nobuyuki Sugii
, Hiromitsu Hada, Yasuhiro Ogasahara
:
A Silicon-on-Thin-Buried-Oxide CMOS Microcontroller with Embedded Atom-Switch ROM. IEEE Micro 35(6): 13-23 (2015) - [j12]Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii
, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes. Microelectron. Reliab. 55(2): 402-406 (2015) - [j11]Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii
, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity. Microelectron. Reliab. 55(2): 407-410 (2015) - 2014
- [j10]Chunmeng Dou, Tomoya Shoji, Kazuhiro Nakajima, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii
, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement. Microelectron. Reliab. 54(4): 725-729 (2014) - [j9]Yan Wu, Hiroyuki Hasegawa, Kuniyuki Kakushima, Kenji Ohmori, Takanobu Watanabe
, Akira Nishiyama, Nobuyuki Sugii
, Hitoshi Wakabayashi, Kazuo Tsutsui, Yoshinori Kataoka, Kenji Natori, Keisaku Yamada, Hiroshi Iwai:
A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability. Microelectron. Reliab. 54(5): 899-904 (2014) - 2012
- [j8]Chunmeng Dou, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii
, Kenji Natori, Takeo Hattori, Hiroshi Iwai:
Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer. Microelectron. Reliab. 52(4): 688-691 (2012) - [j7]M. Mamatrishat, T. Kubota, T. Seki, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii
, Kenji Natori, Takeo Hattori, Hiroshi Iwai:
Oxide and interface trap densities estimation in ultrathin W/La2O3/Si MOS capacitors. Microelectron. Reliab. 52(6): 1039-1042 (2012) - 2011
- [j6]D. Zade, Soshi Sato, Kuniyuki Kakushima, A. Srivastava, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii
, Kenji Natori, Takeo Hattori, Chandan Kumar Sarkar, Hiroshi Iwai:
Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise. Microelectron. Reliab. 51(4): 746-750 (2011) - 2010
- [j5]Kuniyuki Kakushima, K. Okamoto, T. Koyanagi, M. Kouda, Kiichi Tachi, Takamasa Kawanago, J. Song, Parhat Ahmet, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii
, Takeo Hattori, Hiroshi Iwai:
SrO capping effect for La2O3/Ce-silicate gate dielectrics. Microelectron. Reliab. 50(3): 356-359 (2010) - [j4]Kuniyuki Kakushima, Kiichi Tachi, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii
, Takeo Hattori, Hiroshi Iwai:
Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics. Microelectron. Reliab. 50(6): 790-793 (2010) - 2008
- [j3]Parhat Ahmet, Kentaro Nakagawa, Kuniyuki Kakushima, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii
, Takeo Hattori, Hiroshi Iwai:
Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack. Microelectron. Reliab. 48(11-12): 1769-1771 (2008) - 2007
- [j2]Joel Molina Reyes
, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai:
Carrier separation and Vth measurements of W-La2O3 gated MOSFET structures after electrical stress. IEICE Electron. Express 4(6): 185-191 (2007) - 2006
- [j1]Jin-Aun Ng, Nobuyuki Sugii
, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai:
Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing. IEICE Electron. Express 3(13): 316-321 (2006)
Conference and Workshop Papers
- 2017
- [c8]Koichiro Ishibashi, Junya Kikuchi, Nobuyuki Sugii
:
A 910nW delta sigma modulator using 65nm SOTB technology for mixed signal IC of IoT applications. ICICDT 2017: 1-3 - 2015
- [c7]Toshitsugu Sakamoto, Yukihide Tsuji
, Munehiro Tada
, Hideki Makiyama, Takumi Hasegawa, Yoshiki Yamamoto, Shinobu Okanishi, Keiichi Maekawa, Naoki Banno, Makoto Miyamura, Koichiro Okamoto, Noriyuki Iguchi, Yasuhiro Ogasahara, Hidekazu Oda, Shiro Kamohara, Yasushi Yamagata, Nobuyuki Sugii
, Hiromitsu Hada:
0.39-V, 18.26-µW/MHz SOTB CMOS Microcontroller with embedded atom switch ROM. COOL Chips 2015: 1-3 - [c6]Duc-Hung Le
, Nobuyuki Sugii
, Shiro Kamohara, Xuan-Thuan Nguyen, Koichiro Ishibashi, Cong-Kha Pham
:
Design of a low-power fixed-point 16-bit digital signal processor using 65nm SOTB process. ICICDT 2015: 1-4 - [c5]Yukihide Tsuji
, Xu Bai, Makoto Miyamura, Toshitsugu Sakamoto, Munehiro Tada
, Naoki Banno, Koichiro Okamoto, Noriyuki Iguchi, Nobuyuki Sugii
, Hiromitsu Hada:
Sub-μW standby power, <18 μW/DMIPS@25MHz MCU with embedded atom-switch programmable logic and ROM. VLSIC 2015: 86- - 2014
- [c4]Koichiro Ishibashi, Nobuyuki Sugii
, Kimiyoshi Usami, Hideharu Amano, Kazutoshi Kobayashi, Cong-Kha Pham
, Hideki Makiyama, Yoshiki Yamamoto, Hirofumi Shinohara, Toshiaki Iwamatsu, Yasuo Yamaguchi, Hidekazu Oda, Takumi Hasegawa, Shinobu Okanishi, Hiroshi Yanagita, Shiro Kamohara, Masaru Kadoshima, Keiichi Maekawa, Tomohiro Yamashita, Duc-Hung Le
, Takumu Yomogita, Masaru Kudo, Kuniaki Kitamori, Shuya Kondo, Yuuki Manzawa:
A Perpetuum Mobile 32bit CPU with 13.4pJ/cycle, 0.14µA sleep current using Reverse Body Bias Assisted 65nm SOTB CMOS technology. COOL Chips 2014: 1-3 - [c3]Shiro Kamohara, Nobuyuki Sugii
, Koichiro Ishibashi, Kimiyoshi Usami, Hideharu Amano, Kazutoshi Kobayashi, Cong-Kha Pham
:
A perpetuum mobile 32bit CPU on 65nm SOTB CMOS technology with reverse-body-bias assisted sleep mode. Hot Chips Symposium 2014: 1 - 2013
- [c2]Takamasa Kawanago, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii
, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT. ESSDERC 2013: 107-110 - 2012
- [c1]Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii
, Kazuo Tsutsui, Kenji Natori, Takeo Hattori, Hiroshi Iwai:
(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture. ESSDERC 2012: 89-92
Coauthor Index
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