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"Effective mobility and interface-state density of ..."

Jin-Aun Ng et al. (2006)

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DOI: 10.1587/ELEX.3.316

access: open

type: Journal Article

metadata version: 2021-10-14

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  dblp key:
  - journals/ieiceee/NgSKATHI06
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  persistent URL:
  - https://dblp.org/rec/journals/ieiceee/NgSKATHI06
Jin-Aun Ng, Nobuyuki Sugii, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai:
Effective mobility and interface-state density of La₂O₃ nMISFETs after post deposition annealing. IEICE Electron. Express 3(13): 316-321 (2006)

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