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Enrico Sangiorgi
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Journal Articles
- 2018
- [j12]Susanna Reggiani, Mattia Rossetti, Antonio Gnudi, Andrea Natale Tallarico
, Antonio Molfese, Stefano Manzini, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna:
TCAD investigation on hot-electron injection in new-generation technologies. Microelectron. Reliab. 88-90: 1090-1093 (2018) - 2017
- [j11]Aldo Romani, Marco Tartagni, Enrico Sangiorgi:
Doing a Lot with a Little: Micropower Conversion and Management for Ambient-Powered Electronics. Computer 50(6): 41-49 (2017) - [j10]Andrea Natale Tallarico
, Susanna Reggiani
, Paolo Magnone, Giuseppe Croce, Riccardo Depetro, P. Gattari, Enrico Sangiorgi, Claudio Fiegna:
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide. Microelectron. Reliab. 76-77: 475-479 (2017) - [j9]Marco Crescentini
, Michele Biondi, Aldo Romani
, Marco Tartagni, Enrico Sangiorgi:
Optimum Design Rules for CMOS Hall Sensors. Sensors 17(4): 765 (2017) - 2013
- [j8]Muthupandian Cheralathan
, Esteban Contreras, Joaquín Alvarado
, Antonio Cerdeira, Giuseppe Iannaccone
, Enrico Sangiorgi, Benjamín Iñíguez:
Implementation of nanoscale double-gate CMOS circuits using compact advanced transport models. Microelectron. J. 44(2): 80-85 (2013) - 2012
- [j7]Raffaele De Rose
, Antonio Malomo, Paolo Magnone
, Felice Crupi, Giorgio Cellere, Marco Martire, Diego Tonini, Enrico Sangiorgi:
A methodology to account for the finger interruptions in solar cell performance. Microelectron. Reliab. 52(9-10): 2500-2503 (2012) - 1993
- [j6]Antonio Abramo, Franco Venturi, Enrico Sangiorgi, Jack M. Higman, Bruno Riccò:
A numerical method to compute isotropic band models from anisotropic semiconductor band structures. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 12(9): 1327-1336 (1993) - 1991
- [j5]Franco Venturi, Enrico Sangiorgi, Rossella Brunetti
, Wolfgang Quade, Carlo Jacoboni, Bruno Riccò:
Monte Carlo simulations of high energy electrons and holes in Si-n-MOSFET's. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 10(10): 1276-1286 (1991) - 1990
- [j4]Enrico Sangiorgi:
Latch-up in CMOS circuits: A review. Eur. Trans. Telecommun. 1(3): 337-349 (1990) - 1989
- [j3]Franco Venturi, R. Kent Smith, Enrico Sangiorgi, Mark R. Pinto, Bruno Riccò:
A general purpose device simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFETs. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 8(4): 360-369 (1989) - 1988
- [j2]Enrico Sangiorgi, Bruno Riccò, Franco Venturi:
MOS2: an efficient MOnte Carlo Simulator for MOS devices. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 7(2): 259-271 (1988) - 1985
- [j1]Enrico Sangiorgi, Mark R. Pinto, Stanley E. Swirhun, Robert W. Dutton:
Two-Dimensional Numerical Analysis of Latchup in a VLSI CMOS Technology. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 4(4): 561-574 (1985)
Conference and Workshop Papers
- 2024
- [c7]M. Millesimo, Claudio Fiegna, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Andrea Natale Tallarico:
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate. IRPS 2024: 1-6 - 2022
- [c6]M. Millesimo, Benoit Bakeroot
, Matteo Borga
, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Claudio Fiegna, Andrea Natale Tallarico:
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition. IRPS 2022: 10 - 2020
- [c5]Andrea Natale Tallarico
, Susanna Reggiani, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna:
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors. IRPS 2020: 1-5 - 2019
- [c4]Davide Cornigli, Andrea Natale Tallarico
, Susanna Reggiani, Claudio Fiegna, Enrico Sangiorgi, Luis Sanchez, Carlos Valdivieso, Giuseppe Consentino
, Felice Crupi:
Characterization and Modeling of BTI in SiC MOSFETs. ESSDERC 2019: 82-85 - [c3]Federico Giuliano, Riccardo Depetro, Giuseppe Croce, Andrea Natale Tallarico
, Susanna Reggiani, Antonio Gnudi, Enrico Sangiorgi, Claudio Fiegna, Mattia Rossetti, Antonio Molfese, Stefano Manzini:
TCAD predictions of hot-electron injection in p-type LDMOS transistors. ESSDERC 2019: 86-89 - [c2]Steve Stoffels
, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot
, Andrea Natale Tallarico
, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga
, Elena Fabris
, Matteo Meneghini, Enrico Zanoni
, Gaudenzio Meneghesso, Juraj Priesol
, Alexander Satka
:
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. IRPS 2019: 1-10 - 2007
- [c1]Enrico Sangiorgi, Pierpaolo Palestri, David Esseni
, Claudio Fiegna, Luca Selmi:
The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs. ESSCIRC 2007: 48-57
Coauthor Index
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