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"Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a ..."

M. Millesimo et al. (2024)

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DOI: 10.1109/IRPS48228.2024.10529393

access: closed

type: Conference or Workshop Paper

metadata version: 2024-05-29

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M. Millesimo, Claudio Fiegna, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Andrea Natale Tallarico:
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate. IRPS 2024: 1-6

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