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Jack M. Higman
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2020 – today
- 2020
- [j5]Gobinda Saha
, Zhewei Jiang, Sanjay Parihar, Xi Cao, Jack M. Higman, Muhammed Ahosan Ul Karim
:
An Energy-Efficient and High Throughput in-Memory Computing Bit-Cell With Excellent Robustness Under Process Variations for Binary Neural Network. IEEE Access 8: 91405-91414 (2020) - [j4]Randy W. Mann
, Meixiong Zhao, Oh Sung Kwon, Xi Cao, Sanjay Parihar, Muhammed Ahosan Ul Karim, Jack M. Higman, Joseph Versaggi, Rick Carter:
Bias-Dependent Variation in FinFET SRAM. IEEE Trans. Very Large Scale Integr. Syst. 28(5): 1341-1344 (2020)
2010 – 2019
- 2019
- [j3]Randy W. Mann
, Meixiong Zhao, Sanjay Parihar, Qun Gao, Ankur Arya, Carl Radens, Shesh Mani Pandey, Joseph Versaggi, Jack M. Higman, Rick Carter:
An Extrinsic Device and Leakage Mechanism in Advanced Bulk FinFET SRAM. IEEE Trans. Very Large Scale Integr. Syst. 27(8): 1819-1827 (2019) - 2018
- [j2]Xiaoyuan Qi
, Raymond J. Rosner, John Hopkins, Jack M. Higman, Rick Mewhirter, Aaron Sinnott, Binod Kumar G. Nair, Ishtiaq Ahsan, Mark Lagus:
A Simplified Yield Model for SRAM Repair in Advanced Technology. IEEE Trans. Very Large Scale Integr. Syst. 26(11): 2494-2503 (2018) - 2015
- [c1]David Burnett, Sriram Balasubramanian, Vivek Joshi, Sanjay Parihar, Jack M. Higman, C. Weintraub:
SRAM Vmax stability considerations. IRPS 2015: 6
1990 – 1999
- 1993
- [j1]Antonio Abramo, Franco Venturi, Enrico Sangiorgi, Jack M. Higman, Bruno Riccò:
A numerical method to compute isotropic band models from anisotropic semiconductor band structures. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 12(9): 1327-1336 (1993)
1980 – 1989
- 1989
- [b1]Jack M. Higman:
Theoretical studies of high field electron transport in silicon devices. University of Illinois Urbana-Champaign, USA, 1989
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