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ORCIDBenjamín Iñíguez
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2020 – today
- 2022
[c23]Christian Römer, Ghader Darbandy, Mike Schwarz, Jens Trommer
, Maik Simon, Andre Heinzig, Thomas Mikolajick, Walter M. Weber, Benjamín Iñíguez, Alexander Kloes:
Compact Modeling of Channel-Resistance Effects in Reconfigurable Field-Effect Transistors. MIXDES 2022: 33-39- [c22]Aristeidis Nikolaou, Jakob Leise, Jakob Pruefer, Ute Zschieschang, Hagen Klauk, Ghader Darbandy, Benjamín Iñíguez, Alexander Kloes:
Impact of Mechanical Bending on the Performance of Organic Thin-Film Transistors and the Characteristic Temperature of the Density of States. MIXDES 2022: 45-50 - 2021
- [c21]Aristeidis Nikolaou, Jakob Leise, Jakob Pruefer, Ute Zschieschang, Hagen Klauk, Ghader Darbandy, Benjamín Iñíguez, Alexander Kloes:
Variability-Aware Characterization of Current Mirrors Based on Organic Thin-Film Transistors on Flexible Substrates. MIXDES 2021: 56-60
2010 – 2019
- 2019
- [c20]Atieh Farokhnejad, Fabian Horst, Benjamín Iñíguez, François Lime, Alexander Kloes:
Evaluation of Static/Transient Performance of TFET Inverter Regarding Device Parameters Using a Compact Model. ESSDERC 2019: 202-205 - [c19]Jakob Prüfer, Jakob Simon Leise, Ghader Darbandy, James W. Borchert, Hagen Klauk, Benjamín Iñíguez, Thomas Gneiting, Alexander Kloes:
Analytical Model for Threshold-Voltage Shift in Submicron Staggered Organic Thin-Film Transistors. MIXDES 2019: 71-75 - [c18]Fabian Horst, Atieh Farokhnejad, Benjamín Iñíguez, Alexander Kloes:
Closed-Form Modeling Approach of Trap-Assisted Tunneling Current for Use in Compact TFET Models. MIXDES 2019: 81-86 - 2018
- [c17]Fabian Horst, Atieh Farokhnejad, Benjamín Iñíguez, Alexander Kloes:
An Area Equivalent WKB Approach to Calculate the B2B Tunneling Probability for a Numerical Robust Implementation in TFET Compact Models. MIXDES 2018: 45-50 - 2017
- [c16]Michael Graef, Franziska Hain, Fabian Hosenfeld, Fabian Horst, Atieh Farokhnejad, Benjamín Iñíguez, Alexander Kloes:
Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs. MIXDES 2017: 127-131 - [c15]Fabian Hosenfeld, Fabian Horst, Alexander Kloes, Benjamín Iñíguez, François Lime:
Non-iterative NEGF based model for band-to-band tunneling current in DG TFETs. MIXDES 2017: 143-148 - 2016
- [j17]Antonio Cerdeira, Magali Estrada, Lluís F. Marsal, Josep Pallarès, Benjamín Iñíguez:
On the series resistance in staggered amorphous thin film transistors. Microelectron. Reliab. 63: 325-335 (2016) - [c14]Fabian Horst, Michael Graef, Fabian Hosenfeld, Atieh Farokhnejad, Franziska Hain, Gia Vinh Luong, Qing-Tai Zhao, Benjamín Iñíguez, Alexander Kloes:
Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation. ESSDERC 2016: 456-459 - [c13]Y. Hernandez-Barrios, F. Avila-Herrera, Magali Estrada, Antonio Cerdeira, Oana Moldovan, Benjamín Iñíguez, Rodrigo Picos:
Modeling the variation of threshold voltage, mobility factor and saturation coefficient in amorphous Indium-Gallium-Zinc Oxide thin film transistors. CCE 2016: 1-4 - [c12]Michael Graef, Franziska Hain, Fabian Hosenfeld, Fabian Horst, Atieh Farokhnejad, Alexander Kloes, Benjamín Iñíguez:
Comparative numerical analysis and analytical RDF-modeling of MOSFETs and DG Tunnel-FETs. MIXDES 2016: 47-51 - [c11]Fabian Hosenfeld, Michael Graef, Fabian Horst, Alexander Kloes, Benjamín Iñíguez, François Lime:
Modeling approach for rapid NEGF-based simulation of ballistic current in ultra-short DG MOSFETs. MIXDES 2016: 52-57 - 2015
- [j16]Oana Moldovan, Benjamín Iñíguez, M. Jamal Deen, Lluís F. Marsal:
Graphene electronic sensors - review of recent developments and future challenges. IET Circuits Devices Syst. 9(6): 446-453 (2015) - [j15]Benito González, Juan Bautista Roldán, Benjamín Iñíguez, Antonio Lázaro, Antonio Cerdeira:
DC self-heating effects modelling in SOI and bulk FinFETs. Microelectron. J. 46(4): 320-326 (2015) - [j14]Oana Moldovan, François Lime, Benjamín Iñíguez:
A complete and Verilog-A compatible Gate-All-Around long-channel junctionless MOSFET model implemented in CMOS inverters. Microelectron. J. 46(11): 1069-1072 (2015) - 2014
- [j13]Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez:
A 2D closed form model for the electrostatics in hetero-junction double-gate tunnel-FETs for calculation of band-to-band tunneling current. Microelectron. J. 45(9): 1144-1153 (2014) - [j12]Thomas Holtij, Michael Graef, Alexander Kloes, Benjamín Iñíguez:
Modeling and performance study of nanoscale double gate junctionless and inversion mode MOSFETs including carrier quantization effects. Microelectron. J. 45(9): 1220-1225 (2014) - [j11]C. Meneses, J. G. Sánchez, Magali Estrada, Antonio Cerdeira, Josep Pallarès, Benjamín Iñíguez, Lluís F. Marsal:
Characterization of MIS structures and PTFTs using TiOx deposited by spin-coating. Microelectron. Reliab. 54(5): 893-898 (2014) - [c10]Thomas Holtij, Michael Graef, Alexander Kloes, Benjamín Iñíguez:
3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs. ESSDERC 2014: 258-261 - [c9]Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez:
Improved analytical potential modeling in double-gate tunnel-FETs. MIXDES 2014: 49-53 - 2013
- [j10]Muthupandian Cheralathan, Esteban Contreras, Joaquín Alvarado, Antonio Cerdeira, Giuseppe Iannaccone, Enrico Sangiorgi, Benjamín Iñíguez:
Implementation of nanoscale double-gate CMOS circuits using compact advanced transport models. Microelectron. J. 44(2): 80-85 (2013) - [c8]Thomas Holtij, Michael Graef, Franziska Hain, Alexander Kloes, Benjamín Iñíguez:
Unified charge model for short-channel junctionless double gate MOSFETs. MIXDES 2013: 75-80 - [c7]Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez:
Two-dimensional physics-based modeling of electrostatics and band-to-band tunneling in tunnel-FETs. MIXDES 2013: 81-85 - [c6]F. M. Yigletu, Benjamín Iñíguez, Sourabh Khandelwal, Tor A. Fjeldly:
A compact charge-based physical model for AlGaN/GaN HEMTs. RWS 2013: 274-276 - [c5]F. M. Yigletu, Benjamín Iñíguez, Sourabh Khandelwal, Tor A. Fjeldly:
A compact charge-based physical model for AlGaN/GaN HEMTs. WiSNet 2013: 70-72 - 2012
- [j9]Alejandra Castro-Carranza, Magali Estrada, Jairo C. Nolasco, Antonio Cerdeira, Lluís F. Marsal, Benjamín Iñíguez, Josep Pallarès:
Organic thin-film transistor bias-dependent capacitance compact model in accumulation regime. IET Circuits Devices Syst. 6(2): 130-135 (2012) - [j8]Rodrigo Picos, Eugenio García-Moreno, Miquel Roca, Benjamín Iñíguez, Magali Estrada, Antonio Cerdeira:
Optimised design of an organic thin-film transistor amplifier using the gm/ID methodology. IET Circuits Devices Syst. 6(2): 136-140 (2012) - [j7]Magali Estrada, Antonio Cerdeira, Benjamín Iñíguez:
Effect of interface charge on the dc bias stress-induced deformation and shift of the transfer characteristic of amorphous oxide thin-film transistors. Microelectron. Reliab. 52(7): 1342-1345 (2012) - [j6]Antonio Cerdeira, Magali Estrada, Blanca S. Soto-Cruz, Benjamín Iñíguez:
Modeling the behavior of amorphous oxide thin film transistors before and after bias stress. Microelectron. Reliab. 52(11): 2532-2536 (2012) - 2011
- [j5]V. S. Balderrama, Magali Estrada, Antonio Cerdeira, Blanca S. Soto-Cruz, Lluís F. Marsal, Josep Pallarès, Jairo C. Nolasco, Benjamín Iñíguez, Emilio Palomares, Josep Albero:
Influence of P3HT: PCBM blend preparation on the active layer morphology and cell degradation. Microelectron. Reliab. 51(3): 597-601 (2011) - [c4]Antonio Cerdeira, Magali Estrada, Benjamín Iñíguez, S. Soto:
Modeling the subthreshold region of OTFTs. CCE 2011: 1-4
2000 – 2009
- 2008
- [j4]Julio C. Tinoco, Magali Estrada, Benjamín Iñíguez, Antonio Cerdeira:
Conduction mechanisms of silicon oxide/titanium oxide MOS stack structures. Microelectron. Reliab. 48(3): 370-381 (2008) - 2007
- [c3]Benjamín Iñíguez, Antonio Lázaro, Hamdy Abd Elhamid, Oana Moldovan, Bogdan Nae, Jaume Roig, David Jiménez:
Charge-Based Compact Modeling of Multiple-Gate MOSFET. CICC 2007: 49-56 - 2006
- [c2]S. Kolberg, Tor A. Fjeldly, Benjamín Iñíguez:
Self-consistent 2D Compact Model for Nanoscale Double Gate MOSFETs. International Conference on Computational Science (4) 2006: 607-614 - 2005
- [j3]Magali Estrada, Antonio Cerdeira, Luis Reséndiz, Benjamín Iñíguez, Lluís F. Marsal, Josep Pallarès:
Effect of localized traps on the anomalous behavior of the transconductance in nanocrystalline TFTs. Microelectron. Reliab. 45(7-8): 1161-1166 (2005)
1990 – 1999
- 1998
- [j2]Eugenio García-Moreno, Benjamín Iñíguez, Miquel Roca, Jaume Segura, Eugeni Isern:
Clocked Dosimeter Compatible with Digital CMOS Technology. J. Electron. Test. 12(1-2): 101-110 (1998) - 1995
- [j1]Benjamín Iñíguez, Eugenio García-Moreno:
Development of a Cinfinity-continuous small-signal model for a MOS transistor in normal operation. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 14(2): 163-166 (1995) - 1994
- [c1]Benjamín Iñíguez, Eugenio García-Moreno:
Development of a Cinfinty-Continuous Small-Signal Model for a MOS Transistor. ISCAS 1994: 193-196
Coauthor Index
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