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J. H. Lee
Publications
- 2023
- [c31]P. C. Chang, P. J. Liao, C. H. Wu, Y. C. Chang, D. H. Hou, Elia Ambrosi, H. Y. Lee, J. H. Lee, X. Y. Bao:
A New Ramp Stress Reliability Assessment on Pulse Energy Based OTS Switching Operation. IRPS 2023: 1-5 - [c30]J. H. Lee, B. W. Woo, Y. M. Lee, N. H. Lee, S. H. Lee, Y. S. Lee, H. S. Kim, S. Pae:
Reliability Improvement with Optimized BEOL Process in Advanced DRAM. IRPS 2023: 1-4 - [c29]Hideo Sato, H. M. Shin, H. Jung, S. W. Lee, H. Bae, H. Kwon, K. H. Ryu, W. C. Lim, Y. S. Han, J. H. Jeong, J. M. Lee, D. S. Kim, K. Lee, J. H. Lee, J. H. Park, Y. J. Song, Y. Ji, B. I. Seo, J. W. Kim, H. H. Kim:
Comprehensive study on prediction of endurance properties from breakdown voltage in high-reliable STT-MRAM. IRPS 2023: 1-5 - [c28]Jung-Won Han, S. H. Park, M. Y. Jeong, K. S. Lee, K. N. Kim, H. J. Kim, J. C. Shin, S. M. Park, S. H. Shin, S. W. Park, K. S. Lee, J. H. Lee, S. H. Kim, B. C. Kim, M. H. Jung, I. Y. Yoon, H. Kim, S. U. Jang, K. J. Park, Y. K. Kim, I. G. Kim, J. H. Oh, S. Y. Han, B. S. Kim, B. J. Kuh, J. M. Park:
Ongoing Evolution of DRAM Scaling via Third Dimension -Vertically Stacked DRAM -. VLSI Technology and Circuits 2023: 1-2 - [c27]S. Ko, J. H. Park, J. H. Bak, H. Jung, J. Shim, D. S. Kim, W. Lim, D.-E. Jeong, J. H. Lee, K. Lee, J.-H. Park, Y. Kim, C. Kim, J. H. Jeong, C. Y. Lee, S. H. Han, Y. Ji, S. H. Hwang, H. J. Shin, K. Lee, Y. J. Song, Y. G. Shin, J. H. Song:
Highly Reliable and Manufacturable MRAM embedded in 14nm FinFET node. VLSI Technology and Circuits 2023: 1-2 - [c26]J.-H. Yoo, H.-B. Jo, I.-G. Lee, S.-M. Choi, J.-M. Baek, S. T. Lee, H. Jang, M. W. Kong, H. H. Kim, H. J. Lee, H.-J. Kim, H.-S. Jeong, W.-S. Park, D.-H. Ko, S. H. Shin, H.-M. Kwon, S. K. Kim, J. G. Kim, J. Yun, T. Kim, K.-Y. Shin, T.-W. Kim, J.-K. Shin, J.-H. Lee, C.-S. Shin, K.-S. Seo, Dae-Hyun Kim:
Lg = 60 nm In0.53 Ga0.47 As MBCFETs: From gm_max = 13.7 mS/üm and Q = 180 to virtual-source modeling. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c25]Y. K. Chang, P. J. Liao, S. H. Yeong, Y.-M. Lin, J. H. Lee, C. T. Lin, Z. Yu, Wilman Tsai, Paul C. McIntyre:
The Field-dependence Endurance Model and Its Mutual Effect in Hf-based Ferroelectrics. IRPS 2022: 3 - [c24]P. C. Chang, P. J. Liao, D. W. Heh, C. Lee, D. H. Hou, Elia Ambrosi, C. H. Wu, H. Y. Lee, J. H. Lee, Xinyu Bao:
Investigation of First Fire Effect on VTH Stability and Endurance in GeCTe Selector. IRPS 2022: 4 - [c23]P. S. Chen, Y. W. Lee, D. S. Huang, S. C. Chen, C. F. Cheng, J. H. Lee, Jun He:
AC TDDB Analysis for HK/IL Gate Stack Breakdown and Frequency-dependent Oxygen Vacancy Trap Generation in Advanced nodes FinFET Devices by SILC Spectrum Methodology. IRPS 2022: 11 - [c22]H.-B. Jo, I.-G. Lee, J.-M. Baek, S. T. Lee, S.-M. Choi, H.-J. Kim, H.-S. Jeong, W.-S. Park, J.-H. Yoo, H.-Y. Lee, D. Y. Yun, SW. Son, D.-H. Ko, Tae-Woo Kim, H.-M. Kwon, S.-K. Kim, Jun-Gyu Kim, J. Yun, T. Kim, J. H. Lee, J.-H. Lee, C.-S. Shin, K.-S. Seo, Dae-Hyun Kim:
Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets. VLSI Technology and Circuits 2022: 397-398 - [c21]H.-B. Jo, I.-G. Lee, J.-M. Baek, S. T. Lee, S.-M. Choi, H.-J. Kim, H.-S. Jeong, W.-S. Park, J.-H. Yoo, H.-Y. Lee, D. Y. Yun, SW. Son, D.-H. Ko, Tae-Woo Kim, H.-M. Kwon, S.-K. Kim, Jun-Gyu Kim, J. Yun, T. Kim, J. H. Lee, J.-H. Lee, C.-S. Shin, K.-S. Seo, Dae-Hyun Kim:
Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets. VLSI Technology and Circuits 2022: 397-398 - 2020
- [c20]Hyun-Chul Park, D. Kang, S. M. Lee, B. Park, K. Kim, Jooseok Lee, Y. Aoki, Y. Yoon, S. Lee, D. Lee, D. Kwon, Seokhyeon Kim, J. Kim, W. Lee, C. Kim, S. Park, J. Park, B. Suh, J. Jang, M. Kim, Donggyu Minn, I. Park, S. Kim, K. Min, S. Jeon, A.-S. Ryu, Y. Cho, S. T. Choi, K. H. An, Y. Kim, J. H. Lee, Jae-Ick Son, Sung-Gi Yang:
4.1 A 39GHz-Band CMOS 16-Channel Phased-Array Transceiver IC with a Companion Dual-Stream IF Transceiver IC for 5G NR Base-Station Applications. ISSCC 2020: 76-78 - 2019
- [c19]Y. Ji, H. J. Goo, J. Lim, S. B. Lee, S. Lee, Taiki Uemura, J. C. Park, S. I. Han, S. C. Shin, J. H. Lee, Y. J. Song, K. M. Lee, H. M. Shin, S. H. Hwang, B. Y. Seo, Y. K. Lee, J. C. Kim, Gwanhyeob Koh, K. C. Park, Sangwoo Pae, Gi-Tae Jeong, J. S. Yoon, E. S. Jung:
Reliability of 8Mbit Embedded-STT-MRAM in 28nm FDSOI Technology. IRPS 2019: 1-3 - 2018
- [c18]J. H. Lee, D. Kim, T. J. Kim, H. N. Byun, C. G. Kim:
A new approach to motion judder cancellation: Time stamp model using instant frame rate. ICCE 2018: 1-4 - [c17]I. K. Chen, S. C. Chen, S. Mukhopadhyay, D. S. Huang, J. H. Lee, Y. S. Tsai, Ryan Lu, Jun He:
The physical mechanism investigation of off-state drain bias TDDB and its implication in advance HK/MG FinFETs. IRPS 2018: 4 - [c16]D. S. Huang, J. H. Lee, Y. S. Tsai, Y. F. Wang, Y. S. Huang, C. K. Lin, Ryan Lu, Jun He:
Comprehensive device and product level reliability studies on advanced CMOS technologies featuring 7nm high-k metal gate FinFET transistors. IRPS 2018: 6 - 2017
- [c15]Seongmo Park, Byoung Gun Choi, Kwang-Il Oh, S. E. Kim, J. H. Lee, J. J. Lee, Sung Weon Kang:
Image compression based on MR-CNN (Modified Region Convolutional Neural Network). ISOCC 2017: 292-293 - [c14]S. W. Lee, J.-H. Lee, H. G. Kwon, Thomas Laurell, Ok Chan Jeong, S. Kim:
A sol-gel integrated dual-readout microarray platform for quantification and identification of prostate-specific antigen. MHS 2017: 1-3 - [c13]Guohan Hu, J. J. Nowak, G. Lauer, J. H. Lee, J. Z. Sun, J. Harms, A. Annunziata, S. Brown, W. Chen, Y. H. Kim, N. Marchack, S. Murthy, Chandrasekharan Kothandaraman, Eugene J. O'Sullivan, J. H. Park, M. Reuter, R. P. Robertazzi, Philip Louis Trouilloud, Y. Zhu, Daniel Christopher Worledge:
Low-current Spin Transfer Torque MRAM. VLSI-DAT 2017: 1-2 - 2014
- [c11]D. Kim, Y. S. Cho, J. H. Lee, H. N. Byun, C. G. Kim:
Real-time FPGA implementation of Full HD@120Hz frame rate up-conversion system. ICCE 2014: 109-110 - 2012
- [j9]I. J. Kim, H. K. Moon, J. H. Lee, Nae-Eung Lee, J. W. Jung, S. H. Cho:
Silicon nitride etch characteristics in SF6/O2 and C3F6O/O2 plasmas and evaluation of their global warming effects. Microelectron. Reliab. 52(12): 2970-2974 (2012) - 2010
- [j8]C.-H. Lee, J.-H. Lee, O.-S. Shin, S.-C. Kim:
Sum rate analysis of multiantenna multiuser relay channel. IET Commun. 4(17): 2032-2040 (2010) - 2006
- [j5]E. S. Son, K. H. Han, J. H. Lee, Y. C. Chung:
Survivable Network Architectures for Wavelength-division-multiplexed Passive Optical Networks. Photonic Netw. Commun. 12(1): 111-115 (2006) - 2005
- [j4]J. S. Yim, J. H. Lee, Y. D. Jang, Moon-Deock Kim, Donghan Lee, H. D. Kim, S. H. Pyun, W. G. Jeong, J. S. Kim, S. U. Hong:
Optical characteristics of In(Ga)As quantum dots on (100) InP substrate for 1.5mum laser diodes. Microelectron. J. 36(3-6): 190-193 (2005) - 2004
- [j3]Y. H. Kim, Rino Choi, R. Jha, J. H. Lee, Veena Misra, J. C. Lee:
Reliability of High-K Dielectrics and Its Dependence on Gate Electrode and Interfacial / High-K Bi-Layer Structure. Microelectron. Reliab. 44(9-11): 1513-1518 (2004) - 2003
- [c7]J. J. Lee, J. H. Lee, K. Y. Lee:
Efficient speech enhancement based on left-right HMM with state sequence detection using LRT. INTERSPEECH 2003: 1385-1388 - [c6]J. H. Lee, S. H. Chae, H. W. Suh:
XML based information exchange between PDM systems in CPC environment. CE 2003: 947-956 - [c5]J. H. Lee, S. H. Chae, H. W. Suh, K.-E. Kwon, Y. Choi, S. W. Cho:
The extension of STEP PDM schema for information sharing in a practical application. CE 2003: 957-965 - 2000
- [c3]J. Lee, D. Kong, J. Chun, J. H. Lee, S. Y. Lee, S. J. Lee, J. C. Yun:
Software Environment for Evaluating Performance of Space-Time CDMA Receivers. ICC (1) 2000: 200-204 - [c2]Hyouk Ryeol Choi, S. M. Ryew, T. H. Kang, J. H. Lee, H. M. Kim:
A wall climbing robot with closed link mechanism. IROS 2000: 2006-2011
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