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2020 – today
- 2024
[c30]Jungchul Lee, EC Kwon, SH Yoon, R. G. Oh, S. Y. Park, S. H. Youn, K. R. Choi, T. W. Kim, M. C. Kim, J. H. Park, Y. W. Ko, Y. D. Kim, J. S. Moon, H. A. Park, K. O. Hong, J. Y. Yang, J. Y. Yoon, J. M. Yoon, J. M. Lee, J. H. Kim, H. Y. Yoo, S. J. Kim, N.-H. Lee, S. H. Lee, K. S. Kwon, I. G. Jung, S. Y. Lee, H.-J. Kim, Sangwoo Pae:
Virtual FA Methodology for DRAM: Real-Time Analysis and Risk Assessment Method Using Telemetry. IRPS 2024: 1-7- [c29]SungMan Rhee, Sung-Pyo Park, Sangku Park, Yuchul Hwang, Sangwoo Pae, Jun Meng, Yoonju Park:
V-Ramp VBD Prediction Method Using OCD-Spectrum and Deep-Learning, and Application to Early Detection of V-NAND Low Metal Reliability Risk. IRPS 2024: 1-6 - [c28]Taiki Uemura, Byungjin Chung, Jaehee Choi, Seungbae Lee, Shin-Young Chung, Yuchul Hwang, Sangwoo Pae:
Soft-Error Sensitivity in SRAM Manufactured by Bulk Gate-All-Around (GAA) Technology. IRPS 2024: 1-6 - [c27]Taiki Uemura, Byungjin Chung, Jaehee Choi, Seungbae Lee, Shin-Young Chung, Yuchul Hwang, Sangwoo Pae:
Comprehensive Study of SER in FDSOI-Planar: 28 nm to 18 nm Scaling Effect and Temperature Dependence. IRPS 2024: 1-5 - 2023
- [c26]Taiki Uemura, Byungjin Chung, Shin-Young Chung, Seungbae Lee, Yuchul Hwang, Sangwoo Pae:
Impact of Design and Process on Alpha-Induced SER in 4 nm Bulk-FinFET SRAM. IRPS 2023: 1-8 - [c25]Jiyoung Yoon, Bumgi Lee, Jaehee Song, Bokyoung Kang, Sangho Lee, Doh-Soon Kwak, Heonsang Lim, Ilsang Park, Jonghoon Kim, Sangwoo Pae:
Customized wafer level verification methodology: quality risk pre-diagnosis with enhanced screen-ability of stand-by stress-related deteriorations. IRPS 2023: 1-6 - 2021
- [c24]Gang-Jun Kim, Moonjee Yoon, SungHwan Kim, Myeongkyu Eo, Shinhyung Kim, Taehun You, Namhyun Lee, Kijin Kim, Sangwoo Pae:
The Characterization of Degradation on various SiON pMOSFET transistors under AC/DC NBTI stress. IRPS 2021: 1-4 - [c23]Donghee Son, Gang-Jun Kim, Jongkyun Kim, Nam-Hyun Lee, Kijin Kim, Sangwoo Pae:
Effect of High Temperature on Recovery of Hot Carrier Degradation of scaled nMOSFETs in DRAM. IRPS 2021: 1-4 - 2020
- [c22]Tae-Young Jeong, Miji Lee, Yunkyung Jo, Jinwoo Kim, Min Kim, Myungsoo Yeo, Jinseok Kim, Hyunjun Choi, Joosung Kim, Yoojin Jo, Yongsung Ji, Taiki Uemura, Hai Jiang, Dongkyun Kwon, HwaSung Rhee, Sangwoo Pae, Brandon Lee:
Reliability on EUV Interconnect Technology for 7nm and beyond. IRPS 2020: 1-4 - [c21]Yongsung Ji, Hyunjae Goo, Jungman Lim, Tae-Young Jeong, Taiki Uemura, Gun Rae Kim, Boil Seo, Seungbae Lee, Goeun Park, Jeongmin Jo, Sang-Il Han, Kilho Lee, Junghyuk Lee, Sohee Hwang, Daesop Lee, Suksoo Pyo, Hyun Taek Jung, Shinhee Han, Seungmo Noh, Kiseok Suh, Sungyoung Yoon, Hyeonwoo Nam, Hyewon Hwang, Hai Jiang, J. W. Kim, D. Kwon, Yoonjong Song, K. H. Koh, Hwasung Rhee, Sangwoo Pae, E. Lee:
Reliability of Industrial grade Embedded-STT-MRAM. IRPS 2020: 1-3 - [c20]Hai Jiang
, Hyun-Chul Sagong, Jinju Kim, Hyewon Shim, Yoohwan Kim, Junekyun Park, Taiki Uemura, Yongsung Ji, Taeyoung Jeong, Dongkyun Kwon, Hwasung Rhee, Sangwoo Pae, Brandon Lee:
Advanced Self-heating Model and Methodology for Layout Proximity Effect in FinFET Technology. IRPS 2020: 1-5 - [c19]Heung-Kook Ko, Sena Park, Jihyun Ryu, Sung Ryul Kim, Giwon Lee, Dongjoon Lee, Sangwoo Pae, Euncheol Lee, Yongsun Ji, Hai Jiang, Taeyoung Jeong, Taiki Uemura, Dongkyun Kwon, Hyungrok Do, Hyungu Kahng, Yoon-Sang Cho, Jiyoon Lee, Seoung Bum Kim:
Early Diagnosis and Prediction of Wafer Quality Using Machine Learning on sub-10nm Logic Technology. IRPS 2020: 1-5 - [c18]Taiki Uemura, Byungjin Chung, Jeongmin Jo, Hai Jiang, Yongsung Ji, Tae-Young Jeong, Rakesh Ranjan, Seungbae Lee, Hwasung Rhee, Sangwoo Pae, Euncheol Lee, Jaehee Choi, Shota Ohnishi, Ken Machida:
Backside Alpha-Irradiation Test in Flip-Chip Package in EUV 7 nm FinFET SRAM. IRPS 2020: 1-4 - [c17]Taiki Uemura, Byungjin Chung, Jeongmin Jo, Hai Jiang, Yongsung Ji, Tae-Young Jeong, Rakesh Ranjan, Youngin Park, Kiil Hong, Seungbae Lee, Hwasung Rhee, Sangwoo Pae, Euncheol Lee, Jaehee Choi, Shota Ohnishi, Ken Machida:
Investigating of SER in 28 nm FDSOI-Planar and Comparing with SER in Bulk-FinFET. IRPS 2020: 1-5
2010 – 2019
- 2019
- [c16]Y. Ji, H. J. Goo, J. Lim, S. B. Lee, S. Lee, Taiki Uemura, J. C. Park, S. I. Han, S. C. Shin, J. H. Lee, Y. J. Song, K. M. Lee, H. M. Shin, S. H. Hwang, B. Y. Seo, Y. K. Lee, J. C. Kim, Gwanhyeob Koh, K. C. Park, Sangwoo Pae, Gi-Tae Jeong, J. S. Yoon, E. S. Jung:
Reliability of 8Mbit Embedded-STT-MRAM in 28nm FDSOI Technology. IRPS 2019: 1-3 - [c15]Hai Jiang, Hyun-Chul Sagong, Jinju Kim, Junekyun Park, Sangchul Shin, Sangwoo Pae:
Localized Layout Effect Related Reliability Approach in 8nm FinFETs Technology: From Transistor to Circuit. IRPS 2019: 1-5 - [c14]Hyewon Shim, Jeongmin Jo, Yoohwan Kim, Bongyong Jeong, Minji Shon, Hai Jiang, Sangwoo Pae:
Aging-Aware Design Verification Methods Under Real Product Operating Conditions. IRPS 2019: 1-4 - [c13]Taiki Uemura, Soonyoung Lee, Dahye Min, Ihlhwa Moon, Seungbae Lee, Sangwoo Pae:
SEIFF: Soft Error Immune Flip-Flop for Mitigating Single Event Upset and Single Event Transient in 10 nm FinFET. IRPS 2019: 1-6 - 2018
- [j2]Minjung Jin, Kangjung Kim, Yoohwan Kim, Hyewon Shim, Jinju Kim, Gunrae Kim, Sangwoo Pae:
Investigation of BTI characteristics and its behavior on 10 nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack. Microelectron. Reliab. 81: 201-209 (2018) - [c12]Taiki Uemura, Soonyoung Lee, Dahye Min, Ihlhwa Moon, Jungman Lim, Seungbae Lee, Hyun-Chul Sagong, Sangwoo Pae:
Investigation of alpha-induced single event transient (SET) in 10 nm FinFET logic circuit. IRPS 2018: 1 - [c11]Seongwon Jeong, Jinseok Kim, Ayoung Kim, Byungwook Kim, Moonsoo Lee, Jaewon Chang, In Hak Baick, Hanbyul Kang, Younggeun Ji, Sangchul Shin, Sangwoo Pae:
Optimal design of dummy ball array in wafer level package to improve board level thermal cycle reliability (BLR). IRPS 2018: 3 - [c10]Younggeun Ji, Jeonghoon Kim, Jungin Kim, Miji Lee, Jaeheon Noh, Taeyoung Jeong, Juhyeon Shin, Junho Kim, Young Heo, Ung Cho, Hyun-Chul Sagong, Junekyun Park, Yeonsik Choo, Gilhwan Do, Hoyoung Kang, Eunkyeong Choi, Dongyoon Sun, Changki Kang, Sangchul Shin, Sangwoo Pae:
Reliability characterization of advanced CMOS image sensor (CIS) with 3D stack and in-pixel DTI. IRPS 2018: 3 - [c9]Hyunjin Kim, Minjung Jin, Hyun-Chul Sagong, Jinju Kim, Ukjin Jung, Minhyuck Choi, Junekyun Park, Sangchul Shin, Sangwoo Pae:
A systematic study of gate dielectric TDDB in FinFET technology. IRPS 2018: 4 - [c8]Hyun-Chul Sagong, Hyunjin Kim, Seungjin Choo, Sungyoung Yoon, Hyewon Shim, Sangsu Ha, Tae-Young Jeong, Minhyeok Choe, Junekyun Park, Sangchul Shin, Sangwoo Pae:
Effects of Far-BEOL anneal on the WLR and product reliability characterization of FinFET process technology. IRPS 2018: 6 - 2015
- [c7]Changze Liu, Hyun-Chul Sagong, Hyejin Kim, Seungjin Choo, Hyunwoo Lee, Yoohwan Kim, Hyunjin Kim, Bisung Jo, Minjung Jin, Jinjoo Kim, Sangsu Ha, Sangwoo Pae, Jongwoo Park:
Systematical study of 14nm FinFET reliability: From device level stress to product HTOL. IRPS 2015: 2 - [c6]Jongwoo Park, Miji Lee, Hanbyul Kang, Wooram Ko, Eunkyeong Choi, Junsik Im, Minwoo Lee, Dohwan Chung, Jinchul Park, Sangchul Shin, Sangwoo Pae:
Effects of front-end-of line process variations and defects on retention failure of flash memory: Charge loss/gain mechanism. IRPS 2015: 2 - [c5]Jongwoo Park, Jungpyo Hong, Miji Lee, Dongyoon Sun, Kyung Kang, Taesung Kim, Seungwon Kim, Sujin Kwon, Changkyu Joo, Sangsu Ha, Wooyeon Kim, Jongsu Ryu, Sangwoo Pae:
Contact resistance of solder bump with low cost photosensitive polyimide for high performance SoC. IRPS 2015: 3 - [c4]Soonyoung Lee, Ilgon Kim, Sungmock Ha, Cheong-sik Yu, Jinhyun Noh, Sangwoo Pae, Jongwoo Park:
Radiation-induced soft error rate analyses for 14 nm FinFET SRAM devices. IRPS 2015: 4 - [c3]Jongwoo Park, Miji Lee, Kyunghwan Min, J.-K. Choi, Changkyu Joo, S.-C. Park, Hanbyul Kang, Sangwoo Pae:
Reliability of fine pitch COF: Influence of surface morphology and CuSn intermetallic compound formation. IRPS 2015: 4 - [c2]Hyunsuk Chun, In Hak Baick, Sangsu Ha, Eunmi Kwon, Seungbae Lee, Seil Kim, Sangwoo Pae, Jongwoo Park:
CPI reliability and EMI benefit for MIM CAP embedded C4 package. IRPS 2015: 5 - [c1]Choelhwyi Bae, Sangwoo Pae, Cheong-sik Yu, Kangjung Kim, Yongshik Kim, Jongwoo Park:
SRAM stability design comprehending 14nm FinFET reliability. IRPS 2015: 13
2000 – 2009
- 2006
- [j1]Marty Agostinelli, Shing Lau, Sangwoo Pae, Phil Marzolf, Harish Muthali, Steve Jacobs:
PMOS NBTI-induced circuit mismatch in advanced technologies. Microelectron. Reliab. 46(1): 63-68 (2006)
Coauthor Index
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