"Nanometer-scale InGaAs field-effect transistors for THz and CMOS technologies."

Jesús A. del Alamo (2013)

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DOI: 10.1109/ESSDERC.2013.6818811

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-19

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Jesús A. del Alamo:
Nanometer-scale InGaAs field-effect transistors for THz and CMOS technologies. ESSDERC 2013: 16-21

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