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2020 – today
- 2024
[c16]Geonhui Han, Youngdong Kim, Jaeseon Kim, Dongmin Kim, Yoori Seo, Chuljun Lee, Jinmyung Choi, Jinwoo Lee, Dongho Ahn, Sechung Oh, Donghwa Lee, Hyunsang Hwang:
Highly Scalable Vertical Bypass RRAM (VB-RRAM) for 3D V -NAND Memory. VLSI Technology and Circuits 2024: 1-2- 2023
- [c15]Sanghyun Ban
, Jangseop Lee, Taehoon Kim, Hyunsang Hwang:
Simple Binary In-Te OTS with Sub-nm HfOₓ Buffer Layer for 3D Vertical X-point Memory Applications. VLSI Technology and Circuits 2023: 1-2 - [c14]Seongjae Heo, Dongmin Kim, Wooseok Choi, Sanghyun Ban, Ohhyuk Kwon, Hyunsang Hwang:
Experimental Demonstration of Probabilistic-Bit (p-bit) Utilizing Stochastic Oscillation of Threshold Switch Device. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c13]Seung-Yeol Oh, Hojung Jang, Hyunsang Hwang:
Effects of an interfacial dead layer on the ferroelectric HfZrOx films for low thermal budget. NVMTS 2022: 1-5 - [c12]Jangseop Lee, Seonghun Kim, Sangmin Lee, Sanghyun Ban, Seongjae Heo, Donghwa Lee, Oleksandr Mosendz, Hyunsang Hwang:
Improving the SiGeAsTe Ovonic Threshold Switching (OTS) Characteristics by Microwave Annealing for Excellent Endurance (> 1011) and Low Drift Characteristics. VLSI Technology and Circuits 2022: 320-321 - 2021
- [i1]Revannath Dnyandeo Nikam, Jongwon Lee, Wooseok Choi, Writam Banerjee, Myonghoon Kwak, Manoj Yadav, Hyunsang Hwang:
Ionic Sieving Through One-Atom-Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing. CoRR abs/2109.14935 (2021)
2010 – 2019
- 2019
- [c11]Alessandro Fumarola, Yusuf Leblebici, Pritish Narayanan, Robert M. Shelby, L. L. Sanchez, Geoffrey W. Burr, Kibong Moon, J. Jang, Hyunsang Hwang, Severin Sidler:
Non-filamentary non-volatile memory elements as synapses in neuromorphic systems. NVMTS 2019: 1-6 - 2018
- [c10]Hyunsang Hwang:
Tutorial 1 - ReRAM-based analog synapse devices for neuromorphic system. ICICDT 2018: xv-xviii - [c9]Solomon Amsalu Chekol, Jongmyung Yoo, Hyunsang Hwang:
Thermally Stable Te-based Binary OTS Device for Selector Application. NVMTS 2018: 1-4 - 2017
- [j5]JaeHyun Seo, Sangheon Lee, Kwangmin Kim, Sooeun Lee, Hyunsang Hwang, Byungsub Kim:
Automatic ReRAM SPICE Model Generation From Empirical Data for Fast ReRAM-Circuit Coevaluation. IEEE Trans. Very Large Scale Integr. Syst. 25(6): 1821-1830 (2017) - [c8]Pritish Narayanan, Lucas L. Sanches, Alessandro Fumarola, Robert M. Shelby, Stefano Ambrogio, Jun-Woo Jang, Hyunsang Hwang, Yusuf Leblebici, Geoffrey W. Burr:
Reducing circuit design complexity for neuromorphic machine learning systems based on Non-Volatile Memory arrays. ISCAS 2017: 1-4 - [c7]Andrea Padovani, Luca Larcher, Jiyong Woo, Hyunsang Hwang:
A multiscale modeling approach for the simulation of OxRRAM devices. NVMTS 2017: 1-8 - 2016
- [c6]Severin Sidler, Irem Boybat, Robert M. Shelby, Pritish Narayanan, Jun-Woo Jang, Alessandro Fumarola, Kibong Moon, Yusuf Leblebici, Hyunsang Hwang, Geoffrey W. Burr:
Large-scale neural networks implemented with Non-Volatile Memory as the synaptic weight element: Impact of conductance response. ESSDERC 2016: 440-443 - [c5]Alessandro Fumarola, Pritish Narayanan, Lucas L. Sanches, Severin Sidler, Jun-Woo Jang, Kibong Moon, Robert M. Shelby, Hyunsang Hwang, Geoffrey W. Burr:
Accelerating machine learning with Non-Volatile Memory: Exploring device and circuit tradeoffs. ICRC 2016: 1-8 - [c4]Sangheon Lee, Jeonghwan Song, Changhyuk Seong, Jiyong Woo, Jong-Moon Choi, Soon-Chan Kwon, Ho-Joon Kim, Hyun-Suk Kang, Soo Gil Kim, Hoe Gwon Jung, Kee-Won Kwon, Hyunsang Hwang:
Full chip integration of 3-d cross-point ReRAM with leakage-compensating write driver and disturbance-aware sense amplifier. VLSI Circuits 2016: 1-2 - 2015
- [j4]Myonglae Chu, Byoungho Kim, Sangsu Park, Hyunsang Hwang, Moongu Jeon, Byoung Hun Lee, Byung-Geun Lee:
Neuromorphic Hardware System for Visual Pattern Recognition With Memristor Array and CMOS Neuron. IEEE Trans. Ind. Electron. 62(4): 2410-2419 (2015) - 2014
- [j3]Ahmad Muqeem Sheri, Hyunsang Hwang, Moongu Jeon, Byung-Geun Lee:
Neuromorphic Character Recognition System With Two PCMO Memristors as a Synapse. IEEE Trans. Ind. Electron. 61(6): 2933-2941 (2014) - [c3]Euijun Cha, Jiyong Woo, Daeseok Lee, Sangheon Lee, Hyunsang Hwang:
Selector devices for 3-D cross-point ReRAM. ISCAS 2014: 428-431 - [c2]Jun-Woo Jang, Sangsu Park, Yoon-Ha Jeong, Hyunsang Hwang:
ReRAM-based synaptic device for neuromorphic computing. ISCAS 2014: 1054-1057 - 2013
- [c1]Sangheon Lee, Daeseok Lee, Jiyong Woo, Euijun Cha, Hyunsang Hwang:
A two-step set operation for highly uniform resistive swtiching ReRAM by controllable filament. ESSDERC 2013: 178-181
2000 – 2009
- 2005
- [j2]C. B. Samantaray, Hyunjun Sim, Hyunsang Hwang:
The electronic structures and optical properties of BaTiO3 and SrTiO3 using first-principles calculations. Microelectron. J. 36(8): 725-728 (2005) - 2004
- [j1]C. B. Samantaray, Hyunjun Sim, Hyunsang Hwang:
Electronic structures of high-k transition metal silicates: first-principles calculations. Microelectron. J. 35(8): 655-658 (2004)
Coauthor Index
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