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"Improving the SiGeAsTe Ovonic Threshold Switching (OTS) Characteristics by ..."
Jangseop Lee et al. (2022)
- Jangseop Lee, Seonghun Kim, Sangmin Lee, Sanghyun Ban, Seongjae Heo, Donghwa Lee, Oleksandr Mosendz, Hyunsang Hwang:
Improving the SiGeAsTe Ovonic Threshold Switching (OTS) Characteristics by Microwave Annealing for Excellent Endurance (> 1011) and Low Drift Characteristics. VLSI Technology and Circuits 2022: 320-321
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