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ORCIDMicroelectronics Journal, Volume 35
Volume 35, Number 1, January 2004
- Victor R. Velasco, Joaquín Tutor-Sánchez, Mohamed Henini
:
Preface for NANO' 2003 proceedings. 1 - Leonor Chico, W. Jaskólski:
Localized states in metallic carbon nanotube systems. 3-5 - Jorge M. García, Daniel Granados, Juan Pedro Silveira, Fernando Briones:
In segregation effects during quantum dot and quantum ring formation on GaAs(001). 7-11 - María Ujué González, Luisa González, Jorge M. García, Yolanda González, Juan Pedro Silveira, Fernando Briones:
Stress evolution aspects during InAs/InP (001) quantum wires self-assembling. 13-17 - Charles E. Creffield, Gloria Platero:
Coherence and localization in AC-driven quantum dots. Microelectron. J. 35(1): 19-22 (2004) - Wei Zhang, Sergio E. Ulloa:
Structural and dynamical disorder and charge transport in DNA. 23-26 - Angela S. Camacho, Jaime Bohórquez, Rafael M. Gutiérrez, José Luis Carrillo:
Optical effects based on intersub-band-transitions in quantum wells. 27-31 - A. Iribarren, J. Fuentes Betancourt:
Estimation of drift mobility in InGaAsP semiconducting alloys from photoluminescence at 77 and 300K. 33-35 - N. Mirabal, V. Lavayen, E. Benavente, M. A. Santa Ana, G. González:
Synthesis, functionalization, and properties of intercalation compounds. 37-40 - E. Marega, R. M. Oliveira, C. Ade Souza, H. Arakaki, P. P. González-Borrero:
Optical properties of GaAs/AlAs superlattices grown on (311)A GaAs surfaces. 41-43 - Raúl José Martín-Palma, Vicente Torres-Costa, M. Arroyo-Hernández, Miguel Manso, J. Pérez-Rigueiro, J. M. Martínez-Duart:
Porous silicon multilayer stacks for optical biosensing applications. 45-48 - L. Diago-Cisneros, H. Rodríguez-Coppola, Rolando Pérez-Alvarez, Pedro Pereyra:
Interesting coupling phenomena of heavy and light holes in a (GaAs/AlAs)n superlattice. 49-51 - Lara Kühl Teles, Marcelo Marques, Luiz Guimarães Ferreira, Luísa Maria Ribeiro Scolfaro, José Roberto Leite:
Phase separation, effects of biaxial strain, and ordered phase formations in cubic nitride alloys. 53-57 - Francisco Domínguez-Adame, R. Hey, Vittorio Bellani, G. B. Parravicini, E. Diez:
Spectroscopic ellipsometry of intentionally disordered superlattices. 59-61 - Alexys Bruno-Alfonso:
Wannier-function approach to electron states in superlattices under an electric field. Microelectron. J. 35(1): 63-64 (2004) - B. Díaz, José A. Rodríguez, Montse Riera, Andreu Llobera, Carlos Domínguez, Joaquín Tutor-Sánchez:
Optical properties of silicon rich silicon oxides obtained by PECVD. 65-67 - Cecilia Jiménez-Jorquera, S. Rochefeuille, R. Berjoan, P. Seta, J. P. Desfours, Carlos Domínguez:
Nanostructures for chemical recognition using ISFET sensors. 69-71 - J. R. L. Fernandez, Fernando Cerdeira, Eliermes Arraes Meneses, Júlio Antônio Nieri de Toledo Soares, Odille Cue Noriega, José Roberto Leite, Donat Josef As, U. Köhler, D. G. P. Salazar, D. Schikora:
Near band-edge optical properties of cubic GaN with and without carbon doping. 73-77 - Bernabé Marí, Miguel Mollar, A. Mechkour, B. Hartiti, M. Perales, J. Cembrero:
Optical properties of nanocolumnar ZnO crystals. 79-82 - Miguel Eduardo Mora-Ramos:
Valence band states in diamond p-delta-doped quantum wells. 83-85 - Francisco Domínguez-Adame, Ignacio Gómez, Pedro C. Orellana, María L. Ladrón de Guevara:
Complex behavior of the conductance of quantum wires with a long quantum-dot array. 87-89 - M. T. Pérez-Maldonado, C. Rodríguez-Castellanos:
Floquet states of semiconductor superlattices under an in-plane magnetic field and laser radiation. 91-93 - Luis Quiroga, Ferney J. Rodríguez, Neil F. Johnson:
Non-Markovian effects on quantum superpositions in a nanostructure. 95-96 - L. Diago-Cisneros, Pedro Pereyra, Rolando Pérez-Alvarez, H. Rodríguez-Coppola:
Symmetries in reduced KL Hamiltonians. 97-98 - H. Suárez-Ferrer, H. Rodríguez-Coppola, F. García-Moliner:
Exchange effects in the screening of a phonon mode in a semiconductor quantum well. 99-101
Volume 35, Number 2, February 2004
- H. Rodríguez-Coppola, Joaquín Tutor-Sánchez, J. R. Leite, Luísa Maria Ribeiro Scolfaro, F. García-Moliner:
The absorption coefficient of low dimensional semiconductor systems: the photoluminescence of InGaN quantum dot. 103-110 - Yongqi Fu, Zhongwei Shen, Ngoi Kok Ann Bryan:
A novel harmless trimming for micro-device with defects and particles in arbitrary geometry by fine milling of focused ion beam. 111-115 - Baozeng Guo, Umberto Ravaioli, Dengyuan Song:
Properties of wurtzite GaN MESFETs studied by two-dimensional full band Monte Carlo approach. 117-123 - Lianhui Chen, Guanghan Fan, Yaoyong Meng:
Study of the long-wavelength optic phonons in AlGaInP and AlGaInAs. 125-130 - Chantal Khan Malek, Volker Saile:
Applications of LIGA technology to precision manufacturing of high-aspect-ratio micro-components and -systems: a review. 131-143 - Yang Rong, Jinsheng Luo, Tu Jing, Ruizhi Zhang:
Simulation and comparison of MOS inversion layer quantum mechanics effects in SiGe PMOSFET and Si PMOSFET. 145-149 - Amine M'sir, Fabrice Monteiro, Abbas Dandache, Bernard Lepley:
Design of a high speed parallel encoder for convolutional codes. 151-166 - Clemens Heitzinger, Siegfried Selberherr:
On the simulation of the formation and dissolution of silicon self-interstitial clusters and the corresponding inverse modeling problem. 167-171 - J. G. Guimarães, H. C. do Carmo, José C. da Costa:
Single-electron winner-take-all network. 173-178 - Ahmed Rebey, M. M. Habchi, Zohra Benzarti, B. El Jani:
Study of GaAs layers grown on Ge substrates by MOVPE and in situ monitored by laser reflectometry. 179-184 - O. G. Symko, E. Abdel-Rahman, Y. S. Kwon, M. Emmi, R. Behunin:
Design and development of high-frequency thermoacoustic engines for thermal management in microelectronics. 185-191 - Yongmin Lee, J. Gourlay, W. J. Hossack, Ian Underwood, Anthony J. Walton:
Modelling of binary phase modulation in surface stabilized ferroelectric liquid crystal spatial light modulators. 193-201 - Sang-Wan Ryu, Sung-Bock Kim, Jae-Sik Sim, Yong-Duck Chung, Jong-Hyun Lee, Jeha Kim:
Monolithic integration of thin film mu-heater array with 4-channel WDM transmitter. 203-206 - J. Hellara, F. Hassen, Hichem Maaref, H. Dumont, V. Souliere, Y. Monteil:
Alloy broadening effect on optical properties of InGaAs grown by MOCVD with TMAs precursor. 207-212
Volume 35, Number 3, March 2004
- Vitezslav Benda, E. M. Sankara Narayanan:
Advances in power semiconductor devices. 223 - Dan Kinzer:
Advanced power semiconductors and ICs for DC/DC converter applications. 225-233 - Ekkanath Madathil Shankara Narayanan, Oana I. Spulber, Mark R. Sweet, J. V. S. C. Bose, Konstantin V. Verchinine, N. Luther-King, Natalia A. Moguilnaia, Merlyne M. De Souza:
Progress in MOS-controlled bipolar devices and edge termination technologies. 235-248 - Pavel Hazdra, Jan Vobecký, H. Dorschner, K. Brand:
Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low- and high-energy electrons. 249-257 - Ralf Siemieniec, Josef Lutz:
Possibilities and limits of axial lifetime control by radiation induced centers in fast recovery diodes. 259-267 - Miquel Vellvehí, David Flores, Xavier Jordà, Salvador Hidalgo, José Rebollo, L. Coulbeck, P. Waind:
Design considerations for 6.5 kV IGBT devices. 269-275 - Abdelhakim Bourennane, Marie Breil, Jean-Louis Sanchez, P. Austin, J. Jalade:
A new triggering mode in a vertical bi-directional MOS-thyristor device. 277-285 - Ji-Hoon Hong, Sang-Koo Chung, Yearn-Ik Choi:
Optimum design for minimum on-resistance of low voltage trench power MOSFET. 287-289 - Jaume Roig, David Flores, Salvador Hidalgo, José Rebollo, José Millán:
Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications. 291-297 - Jong Mun Park, Robert Klima, Siegfried Selberherr:
High-voltage lateral trench gate SOI-LDMOSFETs. 299-304 - S. Hardikar, Merlyne M. De Souza, Y. Z. Xu, T. J. Pease, E. M. Sankara Narayanan:
A novel double RESURF LDMOS for HVIC's. 305-310 - Karim S. Karim, Peyman Servati, Arokia Nathan:
High voltage amorphous silicon TFT for use in large area applications. 311-315
Volume 35, Number 4, April 2004
- Shuit-Tong Lee, Ningsheng Xu:
Preface. 317 - G. Oversluizen, S. de Zwart, M. F. Gillies, T. Dekker, T. J. Vink:
The route towards a high efficacy PDP; influence of Xe partial pressure, protective layer, and phosphor saturation. 319-324 - Lin Ke, Ramadas Senthil Kumar, Keran Zhang, Soo-Jin Chua, A. T. S. Wee:
Effect of parylene layer on the performance of OLED. 325-328 - Mirko Croci, Imad Arfaoui, Thomas Stöckli, André Chátelain, Jean-Marc Bonard:
A fully sealed luminescent tube based on carbon nanotube field emission. 329-336 - Man Wong, Hoi-Sing Kwok:
High-performance polycrystalline silicon thin-film transistor technology using low-temperature metal-induced unilateral crystallization. 337-341 - Weishi Wu, Michael Inbasekaran, Michelle Hudack, Dean Welsh, Wanglin Yu, Yang Cheng, Chun Wang, Shari Kram, Melissa Tacey, Mark Bernius:
Recent development of polyfluorene-based RGB materials for light emitting diodes. 343-348 - Noriko Saito, Hajime Haneda, Kunihito Koumoto:
Pattern-deposition of light-emitting ZnO particulate film through biomimetic process using self-assembled monolayer template. 349-352 - Jiyou Wang, Guorui Ji, Peng Jin, Lijuan Zhao, Cunzhou Zhang:
Upconversion emission of a Er3+-doped glass microsphere under 633 nm excitation. 353-355 - Yuhua Wang, Tadshi Endo, Erqing Xie, Deyan He, Bin Liu:
Luminescence properties of Ca4GdO(BO3)3: Eu in ultraviolet and vacuum ultraviolet regions. 357-361 - Atsuhiro Hori, Daisuke Yasunaga, Kenzo Fujiwara:
Unusual temperature dependence of electroluminescence intensity in blue InGaN single quantum well diodes. 363-366 - Lan Zhang, Huizhong Ma, Ning Yao, Huanling Hu, Binglin Zhang:
Field electron emission from amorphous CNx: B films. 367-370 - Bo Wang, Ruzhi Wang, Hua Zhou, X. H. Yan, J. X. Cao, H. Wang, Hui Yan:
Field emission mechanism from nanocrystalline cubic boron nitride films. 371-374 - Zhifu Liu, Yongxiang Li, Yuhong Xiong, Dong Wang, Qingrui Yin:
Electroluminescence of SrAl2O4: Eu2+ phosphor. 375-377 - Yiqing Lu, Yongxiang Li, Yuhong Xiong, Dong Wang, Qingrui Yin:
SrAl2O4: Eu2+, Dy3+ phosphors derived from a new sol-gel route. 379-382 - En-Gang Fu, Da-Ming Zhuang, Gong Zhang, Zhao Ming, Wei-Fang Yang, Jia-Jun Liu:
Properties of transparent conductive ZnO: Al thin films prepared by magnetron sputtering. 383-387 - Yong-ning He, Chang-Chun Zhu, Jing-wen Zhang:
The study on mechanism of ultraviolet laser emission at room temperature from nanocrystal thin ZnO films grown on sapphire substrate by L-MBE. 389-392
Volume 35, Number 5, May 2004
- Won-So Son, Young-Ho Sohn, Sie-Young Choi:
RESURF LDMOSFET with a trench for SOI power integrated circuits. 393-400 - Steven John Lade, Ahmad Zahedi:
A revised ideal model for AlGaAs/GaAs quantum well solar cells. 401-410 - Francesco Giuseppe Della Corte, Fortunato Pezzimenti:
Simulation analysis of the DC current gain in an n-p-n a-Si: H/SiGe/Si heterojunction bipolar transistor. 411-415 - Wei Dong, Xindong Zhang, Caixia Liu, Ming Li, Baokun Xu, Weiyou Chen:
Mechanism for convex corner undercutting of (110) silicon in KOH. 417-419 - Nikos Konofaos:
Electrical characterisation of SiON/n-Si structures for MOS VLSI electronics. 421-425 - Sohan Singh Mehta, Sun Hai Qin, Moitreyee Mukherjee-Roy, Navab Singh, Rakesh Kumar:
Resist pattern peeling assessment in DUV chemically amplified resist. 427-429 - Alina Caddemi, Giovanni Crupi, Nicola Donato:
A robust and fast procedure for the determination of the small signal equivalent circuit of HEMTs. 431-436 - D. Chalabi, M. Idrissi-Benzohra, Abdelkader Saïdane, M. Benzohra, M. Ketata:
Thermal behaviour of 6H-SiC bipolar transistors: spice simulation and applications. 437-442 - Dimitris Gizopoulos:
Low-cost, on-line self-testing of processor cores based on embedded software routines. 443-449 - James T. Doyle, Young-Jun Lee, Yong-Bin Kim:
Fast and accurate DAC modeling techniques based on wavelet theory. 451-460 - Matthew R. Kitchin:
An empirical pseudopotential-based description of carrier scattering by LO phonons in semiconductor heterostructures. 461-470 - Ioannis Tsimperidis, Ioannis Karafyllidis, Antonios Thanailakis:
Design and simulation of a nanoelectronic single-electron universal Control-Control-Not gate. 471-478 - Zunxian Yang, Xinxin Li, Yuelin Wang, Haifei Bao, Min Liu:
Micro cantilever probe array integrated with Piezoresistive sensor. 479-483
Volume 35, Number 6, June 2004
- Etienne Sicard:
Electromagnetic compatibility of integrated circuits. 485-486 - Ross M. Carlton:
An overview of standards in electromagnetic compatibility for integrated circuits. 487-495 - Bob Ross:
IBIS and ICEM interaction. 497-500 - Jean-Luc Levant, Mohammed Ramdani, Richard Perdriau:
ICEM modelling of microcontroller current activity. 501-507 - C. Lochot, S. Calvet, Sonia Ben Dhia, Etienne Sicard:
REGINA test mask: research on EMC guidelines for integrated automotive circuits. 509-523 - Timm Ostermann:
Influence of the power supply on the radiated electromagnetic emission of integrated circuits. 525-530 - Dhanistha Panyasak, Gilles Sicard, Marc Renaudin:
A current shaping methodology for lowering em disturbances in asynchronous circuits. 531-540 - Richard Perdriau, Mohammed Ramdani, Jean-Luc Levant, Eric Tinlot, Anne-Marie Trullemans-Anckaert:
An EMC-oriented VHDL-AMS simulation methodology for dynamic current activity assessment. 541-546 - Thomas Steinecke, Heiko Koehne, Michael Schmidt:
Behavioral EMI models of complex digital VLSI circuits. 547-555 - Franco L. Fiori, Paolo Stefano Crovetti:
Investigation on RFI effects in bandgap voltage references. 557-561 - Olivier Maurice, François de Daran, Frédéric Lafon, Rabha Oussedrat, Imad Ben Yacoub:
GTEM cell facility use during project development phases for automotive. 563-569
Volume 35, Number 7, July 2004
- H. Zhou, F. G. Shi, B. Zhao, J. Yota:
Effect of deposition methods on dielectric breakdown strength of PECVD low-k carbon doped silicon dioxide dielectric thin films. 571-576 - L. Bouzrara, R. Ajjel, H. Mejri, M. A. Zaïdi, S. Alaya, J. Mimila-Arroyo, Hichem Maaref:
Excitonic recombination processes in GaAs grown by close-space vapour transport. 577-580 - Te-Hua Fang, Win-Jin Chang:
Phase transformation of fullerenes using molecular dynamics simulation. 581-583 - Mohamed Bakry El-Mashade, M. Ashry, Sh. M. Eladl, M. S. Rageh:
Performance analysis and stability testing of a new structure of optoelectronic integrated device. 585-589 - P. M. Igic, M. S. Towers, P. A. Mawby:
A 2D physically based compact model for advanced power bipolar devices. 591-594 - Te-Hua Fang, Win-Jin Chang:
Nanoindentation characteristics on polycarbonate polymer film. 595-599 - Shi-Jian Liu, Xiang-Bin Zeng, Jun-Hao Chu:
Thermal-sensitive BST thin film capacitors for dielectric bolometer prepared by RF magnetron sputtering. 601-603 - Y. Zhao, F. Wang, Z. C. Cui, J. Zheng, H. M. Zhang, Daming Zhang, S. Y. Liu, Maobin Yi:
Study of reactive ion etching process to fabricate the PMMA-based polymer waveguide. 605-608 - Christos Drosos, Chrissavgi Dre, Dimitris Metafas, Dimitrios Soudris, Spyros Blionas:
The low power analogue and digital baseband processing parts of a novel multimode DECT/GSM/DCS1800 terminal. 609-620 - Sohan Singh Mehta, Navab Singh, Moitreyee Mukherjee-Roy, Rakesh Kumar:
Placement of scattering bars in binary and attenuated phase shift mask for damascene trench patterning. 621-626 - Jiyou Wang, Guorui Ji, Peng Jin, Lijuan Zhao, Cunzhou Zhang:
Erratum to "Upconversion emission of a Er3+-doped glass microsphere under 633 nm excitation" [Microelectronics Journal 35 (4) 353-355]. 627
Volume 35, Number 8, August 2004
- K. Kang, K. Daneshvar, Raphael Tsu:
Size dependence saturation and absorption of PbS quantum dots. 629-633 - Bongyong Lee, Hongil Yoon, Kyung Sook Hyun, Yong Hwan Kwon, Ilgu Yun:
Investigation of manufacturing variations of planar InP/InGaAs avalanche photodiodes for optical receivers. 635-640 - Ashraf Uddin, Tay Yee Siong:
Study of asymmetrical effects of silicon submicron transistors. 641-645 - Nebojsa D. Jankovic, G. Alastair Armstrong:
Comparative analysis of the DC performance of DG MOSFETs on highly-doped and near-intrinsic silicon layers. 647-653 - C. B. Samantaray, Hyunjun Sim, Hyunsang Hwang:
Electronic structures of high-k transition metal silicates: first-principles calculations. 655-658 - Amador Pérez-Tomás, Xavier Jordà, Philippe Godignon, Jose Luis Gálvez, Miquel Vellvehí, José Millán:
IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process. 659-666 - Wen-Yaw Chung, Chung-Huang Yang, Yaw-Feng Wang, Yi-Je Chan, Wladyslaw Torbicz, Dorota G. Pijanowska:
A signal processing ASIC for ISFET-based chemical sensors. 667-675 - Luis Elvira, Ferran Martorell, Xavier Aragonès, José Luis González:
A physical-based noise macromodel for fast simulation of switching noise generation. 677-684 - Mohamed Henini:
Semiconductors: Data Handbook: Otfried Madelung (Ed.); Springer, ISBN 3-540-40488-0. 685 - Mohamed Henini:
Epitaxy of Nanostructures: V.A. Shchulin, N.N. Ledenstov, D. Bimberg (Eds.); Springer, ISBN 3-540-40488-0. 685 - Mohamed Henini:
X-ray Scattering from Semiconductors (2nd Edition): Paul F. Fewster; Imperial College Press, ISBN: 1-86094-360-8. 685-686
Volume 35, Number 9, September 2004
- Te-Hua Fang, Win-Jin Chang, Shi-Cheng Liao:
Effects of temperature and aperture size on nanojet ejection process by molecular dynamics simulation. 687-691 - C. F. Tsang, C. Y. Li, A. Krishnamoorthy, Y. J. Su, H. Y. Li, L. Y. Wong, W. H. Li, L. J. Tang, K. Y. Ee:
Impact of barrier deposition process on electrical and reliability performance of Cu/CVD low k SiOCH metallization. 693-700 - Te-Hua Fang:
Mechanisms of nanooxidation of Si(100) from atomic force microscopy. 701-707 - Juraj Breza, Magdalena Kadlecíková, Marian Vojs, Miroslav Michalka, Marián Veselý, T. Danis:
Diamond icosahedron on a TiN-coated steel substrate. 709-712 - Adisorn Leelasantitham, B. Srisuchinwong:
A low-power, high-frequency, all-NMOS all-current-mirror sinusoidal quadrature oscillator. 713-721 - Pedro M. Santos, Henrique Jorge Quaresma, A. P. Silva, Mário Lança:
High-voltage NMOS design in fully implanted twin-well CMOS. 723-730 - N. Tugluoglu, S. Altindal, A. Tataroglu, Serdar Karadeniz:
Dielectric properties in Au/SnO2/n-Si (MOS) structures irradiated under 60Co-gamma rays. 731-738 - Shiang-Woei Chyuan, Yunn-Shiuan Liao, Jeng-Tzong Chen:
Computational study of variations in gap size for the electrostatic levitating force of MEMS device using dual BEM. 739-748 - Kow-Ming Chang, Han-Pang Wang:
A new small-signal MOSFET model and parameter extraction method for RF IC's application. 749-759 - G. Venkateshwar Reddy, Mamidala Jagadesh Kumar:
Investigation of the novel attributes of a single-halo double gate SOI MOSFET: 2D simulation study. 761-765 - Babak Nejati, Omid Shoaei:
Systematic design of the pipelined analog-to-digital converter with radix<2. 767-776 - Ming-Sze Tong, Yilong Lu, Yinchao Chen, Mingwu Yang, Qunsheng Cao, Viktor Krozer, Rüdiger Vahldieck:
Design and analysis of planar printed microwave and PBG filters using an FDTD method. 777-781 - Jam Wem Lee, Jin Lian Su, Howard Tang:
Body ballast resistor enhances ESD robustness of deep sub-micron CMOS circuit. 783-788
Volume 35, Number 10, October 2004
- Vladimír Székely:
Special issue on thermal investigations of integrated circuits and systems (THERMINIC'03). Microelectron. J. 35(10): 789-790 (2004) - James Christofferson, Ali Shakouri:
Thermal measurements of active semiconductor micro-structures acquired through the substrate using near IR thermoreflectance. 791-796 - Luis David Patiño Lopez, Stéphane Grauby, Stefan Dilhaire, M. Amine Salhi, Wilfrid Claeys, Stéphane Lefèvre, Sebastian Volz:
Characterization of the thermal behavior of PN thermoelectric couples by scanning thermal microscope. 797-803 - Stefan Holzer, Rainer Minixhofer, Clemens Heitzinger, Johannes Fellner, Tibor Grasser, Siegfried Selberherr:
Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures. 805-810 - Stefan Dilhaire, Stéphane Grauby, Wilfrid Claeys, Jean-Christophe Batsale:
Thermal parameters identification of micrometric layers of microelectronic devices by thermoreflectance microscopy. 811-816 - Qinglin Song, Zheng Cui, Shanhong Xia, Shaofeng Chen:
An ac microcalorimeter for measuring specific heat of thin films. 817-821 - N. J. Pilgrim, W. Batty, Robert W. Kelsall, Christopher M. Snowden:
Nanoscale electrothermal co-simulation: compact dynamic models of hyperbolic heat transport and self-consistent device Monte Carlo. 823-830 - Marcin Janicki, Marcin Daniel, Michal Szermer, Andrzej Napieralski:
Ion sensitive field effect transistor modelling for multidomain simulation purposes. 831-840 - Xavier Perpiñà, Xavier Jordà, N. Mestres, Miquel Vellvehí, Philippe Godignon, José Millán:
Self-heating experimental study of 600V PT-IGBTs under low dissipation energies. 841-847 - Mariagrazia Graziano, Mario R. Casu, Guido Masera, Gianluca Piccinini, Maurizio Zamboni:
Effects of temperature in deep-submicron global interconnect optimization in future technology nodes. 849-857 - Lorenzo Codecasa:
Electro-thermal chaotic oscillations of paralleled bipolar transistors. 859-868
Volume 35, Number 11, November 2004
- Maria J. Avedillo, José M. Quintana, Raúl Jiménez-Naharro:
Pass-transistor based implementations of threshold logic gates for WOS filtering. 869-873 - Ahmed Rebey, Z. Chine, W. Fathallah, B. El Jani, E. Goovaerts, S. Laugt:
Comparative study between electrical, optical and structural properties of annealed heavily carbon doped GaAs. 875-880 - D. Kafantaris, Ioannis Karafyllidis, Ioannis Andreadis:
Implementation of non-linear filters using nanoelectronic single-electron circuitry. 881-889 - N. Chaaben, Tarek Boufaden, M. Christophersen, B. El Jani:
Structural and optical characterization of GaN grown on porous silicon substrate by MOVPE. 891-895 - L. Bouzaïene, Laarbi Sfaxi, Hichem Maaref:
Self-organized InAs/GaAs quantum dots multilayers with growth interruption emitting at 1.3mum. 897-900 - Onur Esame, Yasar Gurbuz, Ibrahim Tekin, Ayhan Bozkurt:
Performance comparison of state-of-the-art heterojunction bipolar devices (HBT) based on AlGaAs/GaAs, Si/SiGe and InGaAs/InP. 901-908 - B. Ramana Murthy, Rakesh Kumar:
A method for deep etching in dielectric films for 3D-chip and photonics applications. 909-913 - Yang-Kuao Kuo, Chuen-Guang Chao, Chi-Yuan Lin:
Analysis of instability line width and white wall created by the photolithography process. 915-922 - Ruiying Shi, Min Gong, Xunchun Liu, Haifen Sun, Zhipeng Yuan:
Self-aligned In0.49Ga0.51P/GaAs HBT DC and RF characteristics related with orientations. 923-925 - Ioannis Voyiatzis:
A counter-based pseudo-exhaustive pattern generator for BIST applications. 927-935 - Ross M. Carlton:
Corrigendum to "An overview of standards in electromagnetic compatibility for integrated circuits" [Microelectronics 35 (2004) 487-495]. Microelectron. J. 35(11): 937-937 (2004)
Volume 35, Number 12, December 2004
- Gustavo A. Ruiz, Mercedes Granda:
An area-efficient static CMOS carry-select adder based on a compact carry look-ahead unit. 939-944 - Goran Lj. Djordjevic, Mile K. Stojcev, Tatjana R. Stankovic:
Approach to partially self-checking combinational circuits design. 945-952 - Leonard R. Rockett:
Designing CMOS data cells for space systems. 953-967 - Ding-Lei Mei, Jing-chun Li, Jing Zhang, Wan-jing Xu, Kaizhou Tan, Mo-hua Yang:
Fabrication of strained Si channel PMOSFET on thin relaxed Si1-xGex virtual substrate. 969-971 - Min Han, Myung-Sik Son, Jung Hun Oh, Bok-Hyung Lee, Mi-Ra Kim, Sam-Dong Kim, Jin Koo Rhee:
Optimization of sub-0.1-mum offset Gamma-shaped gate MHEMTs for millimeter-wave applications. 973-983 - Ping Hsun Chen, Tate Chen, Han Chang Shih:
Spin-on-glass (SOG) process-induced tungsten residue in a semiconductor manufacturing procedure. 985-987 - Janaina Gonçalves Guimarães, José Camargo da Costa:
Design of a single-electron current source for nanoelectronic devices. 989-996
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