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"Simulation and comparison of MOS inversion layer quantum mechanics effects ..."

Yang Rong et al. (2004)

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DOI: 10.1016/J.MEJO.2003.10.002

access: closed

type: Journal Article

metadata version: 2020-02-22

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  - https://dblp.org/rec/journals/mj/RongLJR04
Yang Rong, Jinsheng Luo, Tu Jing, Ruizhi Zhang:
Simulation and comparison of MOS inversion layer quantum mechanics effects in SiGe PMOSFET and Si PMOSFET. Microelectron. J. 35(2): 145-149 (2004)

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