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Publication search results
found 247 matches
- 2009
- Hua Lu, Chris Bailey, Chunyan Yin:
Design for reliability of power electronics modules. Microelectron. Reliab. 49(9-11): 1250-1255 (2009) - Selim Achmatowicz, Konrad Kielbasinski, Elzbieta Zwierkowska, Iwona Wyzkiewicz, Valentinas Baltrusaitis, Malgorzata Jakubowska:
A new photoimageable platinum conductor. Microelectron. Reliab. 49(6): 579-584 (2009) - A. Alaeddine, M. Kadi, K. Daoud, B. Mazari:
Effects of electromagnetic near-field stress on SiGe HBT's reliability. Microelectron. Reliab. 49(9-11): 1029-1032 (2009) - Jesús A. del Alamo, Jungwoo Joh:
GaN HEMT reliability. Microelectron. Reliab. 49(9-11): 1200-1206 (2009) - K.-H. Allers, Josef Böck, S. Boguth, K. Goller, Herbert Knapp, Rudolf Lachner:
Dielectric thinning model applied to metal insulator metal capacitors with Al2O3 dielectric. Microelectron. Reliab. 49(12): 1520-1528 (2009) - H. Altuntas, S. Altindal, H. Shtrikman, Suleyman Özçelik:
A detailed study of current-voltage characteristics in Au/SiO2/n-GaAs in wide temperature range. Microelectron. Reliab. 49(8): 904-911 (2009) - David Alvarez, Kiran V. Chatty, Christian Russ, Michel J. Abou-Khalil, Junjun Li, Robert Gauthier, Kai Esmark, Ralph Halbach, Christopher Seguin:
Design optimization of gate-silicided ESD NMOSFETs in a 45 nm bulk CMOS technology. Microelectron. Reliab. 49(12): 1417-1423 (2009) - Ahmed Amin:
Defects in Microelectronic Materials and Devices, Daniel M. Fleetwood, Sokrates T. Pantelides, Ronald D. Schrimpf (Eds.). Taylor and Francis Group LLC, Boca Raton, FL, USA. Microelectron. Reliab. 49(7): 821-822 (2009) - Nowshad Amin, Victor Lim, Foong Chee Seng, Rozaidi Razid, Ibrahim Ahmad:
A practical investigation on nickel plated copper heat spreader with different catalytic activation processes for flip-chip ball grid array packages. Microelectron. Reliab. 49(5): 537-543 (2009) - Robin Alastair Amy, Guglielmo S. Aglietti, Guy Richardson:
Sensitivity analysis of simplified Printed Circuit Board finite element models. Microelectron. Reliab. 49(7): 791-799 (2009) - Manoubi Auguste Bahi, Hélène Frémont, Jean-Pierre Landesman, Annabelle Gentil, Pascal Lecuyer:
A new methodology for the identification of ball bond degradation during high-temperature aging tests on devices in standard plastic packages. Microelectron. Reliab. 49(9-11): 1273-1277 (2009) - S. Baishya:
A surface potential and quasi-Fermi potential based drain current model for pocket-implanted MOS transistors in subthreshold regime. Microelectron. Reliab. 49(7): 681-688 (2009) - Aditya Bansal, Rahul M. Rao, Jae-Joon Kim, Sufi Zafar, James H. Stathis, Ching-Te Chuang:
Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probability. Microelectron. Reliab. 49(6): 642-649 (2009) - Haifei Bao, Zhaohui Song, Deren Lu, Xinxin Li:
A simple estimation of transverse response of high-g accelerometers by a free-drop-bar method. Microelectron. Reliab. 49(1): 66-73 (2009) - Eduardas Bareisa, Vacius Jusas, Kestutis Motiejunas, Rimantas Seinauskas:
Functional delay test generation based on software prototype. Microelectron. Reliab. 49(12): 1578-1585 (2009) - Muhammad Bashir, Linda S. Milor:
A methodology to extract failure rates for low-k dielectric breakdown with multiple geometries and in the presence of die-to-die linewidth variation. Microelectron. Reliab. 49(9-11): 1096-1102 (2009) - C. Belda, M. Fritsch, Claudia Feller, D. Westphal, G. Jung:
Stability of solid electrolyte based thick-film CO2 sensors. Microelectron. Reliab. 49(6): 614-620 (2009) - Yassine Belmehdi, Stephane Azzopardi, A. Benmansour, Jean-Yves Delétage, Eric Woirgard:
Uni-axial mechanical stress effect on Trench Punch through IGBT under short-circuit operation. Microelectron. Reliab. 49(9-11): 1398-1403 (2009) - Christelle Bénard, Gaëtan Math, Pascal Fornara, Jean-Luc Ogier, Didier Goguenheim:
Influence of various process steps on the reliability of PMOSFETs submitted to negative bias temperature instabilities. Microelectron. Reliab. 49(9-11): 1008-1012 (2009) - Néstor Berbel, Raúl Fernández-García, Ignacio Gil:
Modelling and experimental verification of the impact of negative bias temperature instability on CMOS inverter. Microelectron. Reliab. 49(9-11): 1048-1051 (2009) - Richárd Berényi:
Prototyping of a reliable 3D flexible IC cube package by laser micromachining. Microelectron. Reliab. 49(7): 800-805 (2009) - Mounira Berkani, Stéphane Lefebvre, Narjes Boughrara, Zoubir Khatir, Jean-Claude Faugières, Peter Friedrichs, Ali Haddouche:
Estimation of SiC JFET temperature during short-circuit operations. Microelectron. Reliab. 49(9-11): 1358-1362 (2009) - Mirko Bernardoni, Paolo Cova, Nicola Delmonte, Roberto Menozzi:
Heat management for power converters in sealed enclosures: A numerical study. Microelectron. Reliab. 49(9-11): 1293-1298 (2009) - B. Bernoux, René Escoffier, P. Jalbaud, Jean-Marie Dorkel:
Source electrode evolution of a low voltage power MOSFET under avalanche cycling. Microelectron. Reliab. 49(9-11): 1341-1345 (2009) - Maxime Berthou, P. Retailleau, Hélène Frémont, Alexandrine Guédon-Gracia, C. Jéphos-Davennel:
Microstructure evolution observation for SAC solder joint: Comparison between thermal cycling and thermal storage. Microelectron. Reliab. 49(9-11): 1267-1272 (2009) - Fulvio Bertoluzza, Nicola Delmonte, Roberto Menozzi:
Three-dimensional finite-element thermal simulation of GaN-based HEMTs. Microelectron. Reliab. 49(5): 468-473 (2009) - Corinne Bestory, François Marc, S. Duzellier, Hervé Levi:
Electrical aging behavioral modeling for reliability analyses of ionizing dose effects on an n-MOS simple current mirror. Microelectron. Reliab. 49(9-11): 946-951 (2009) - Wei Bian, Jin He, Lining Zhang, Jian Zhang, Mansun Chan:
Sub-threshold behavior of long channel undoped cylindrical surrounding-gate MOSFETs. Microelectron. Reliab. 49(8): 897-903 (2009) - Roland Biberger, Guenther Benstetter, Holger Goebel:
Displacement current sensor for contact and intermittent contact scanning capacitance microscopy. Microelectron. Reliab. 49(9-11): 1192-1195 (2009) - V. Born, M. Beck, O. Bosholm, D. Dalleau, S. Glenz, I. Haverkamp, G. Kurz, F. Lange, Anja Vest:
Extended metallization reliability testing: Combining standard wafer level with product tests to increase test sensitivity. Microelectron. Reliab. 49(1): 74-78 (2009)
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