"Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell ..."

Aditya Bansal et al. (2009)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2009.03.016

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/BansalRKZSC09
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/BansalRKZSC09
Aditya Bansal, Rahul M. Rao, Jae-Joon Kim, Sufi Zafar, James H. Stathis, Ching-Te Chuang:
Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probability. Microelectron. Reliab. 49(6): 642-649 (2009)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.