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Publication search results
found 49 matches
- 2015
- A. Rouhi Najaf Abadi, W. Guo, X. Sun, K. Ben Ali, Jean-Pierre Raskin, Martin Rack, C. Roda Neve, M. Choi, V. Moroz, Geert Van der Plas, Ingrid De Wolf, Eric Beyne, Philippe P. Absil:
Through silicon via to FinFET noise coupling in 3-D integrated circuits. ICICDT 2015: 1-4 - Jan Ackaert, Tony Colpaert, Aditi Malik, Mario Gonzalez:
Metallization scheme optimization of plastic-encapsulated electronic power devices. ICICDT 2015: 1-4 - M. Akbal, G. Ribes, M. Guillermet, L. Vallier:
Plasma induced damage investigation in the fully depleted SOI technology. ICICDT 2015: 1-4 - Motoki Amagasaki, Qian Zhao, Masahiro Iida, Morihiro Kuga, Toshinori Sueyoshi:
Simple wafer stacking 3D-FPGA architecture. ICICDT 2015: 1-4 - Emna Amouri, Shivam Bhasin, Yves Mathieu, Tarik Graba, Jean-Luc Danger:
Countering early propagation and routing imbalance of DPL designs in a tree-based FPGA. ICICDT 2015: 1-4 - Nicolas André, Guoli Li, Pierre Gérard, Olivier Poncelet, Yun Zeng, Syed Zeeshan Ali, Florin Udrea, Laurent A. Francis, Denis Flandre:
Wide band study of silicon-on-insulator photodiodes on suspended micro-hotplates platforms. ICICDT 2015: 1-4 - Mohammed Aqeeli, Abdullah Alburaikan, Xianjun Huang, Zhirun Hu:
Low-phase noise variation VCO implementing resistorless digitally controlled varactor. ICICDT 2015: 1-4 - S. Athanasiou, Sorin Cristoloveanu, Philippe Galy:
Preliminary 3D TCAD electro-thermal simulations of BIMOS transistor in thin silicon film for ESD protection in FDSOI UTBB CMOS technology. ICICDT 2015: 1-4 - Trong Huynh Bao, Sushil Sakhare, Julien Ryckaert, Dmitry Yakimets, Abdelkarim Mercha, Diederik Verkest, Aaron Voon-Yew Thean, Piet Wambacq:
Design technology co-optimization for enabling 5nm gate-all-around nanowire 6T SRAM. ICICDT 2015: 1-4 - Marie Garcia Bardon, P. Schuddinck, Praveen Raghavan, Doyoung Jang, Dmitry Yakimets, Abdelkarim Mercha, Diederik Verkest, Aaron Thean:
Dimensioning for power and performance under 10nm: The limits of FinFETs scaling. ICICDT 2015: 1-4 - Roman Boschke, Guido Groeseneken, Mirko Scholz, Shih-Hung Chen, Geert Hellings, Peter Verheyen, Dimitri Linten:
ESD protection diodes in optical interposer technology. ICICDT 2015: 1-4 - Moonju Cho, Alessio Spessot, Ben Kaczer, Marc Aoulaiche, Romain Ritzenthaler, Tom Schram, Pierre Fazan, Naoto Horiguchi, Dimitri Linten:
Off-state stress degradation mechanism on advanced p-MOSFETs. ICICDT 2015: 1-4 - Thuy Dao, Mu-Ling Ger, Jiangkai Zuo:
Characterization of onset tunneling voltage (Vonset) walkout in high-voltage deep trench isolation on SOI. ICICDT 2015: 1-4 - Geert Eneman, An De Keersgieter, Anda Mocuta, Nadine Collaert, Aaron Thean:
FinFET stressor efficiency on alternative wafer and channel orientations for the 14 nm node and below. ICICDT 2015: 1-4 - Hua Fan, Kehong Liu, Airong Liu, Lishan Lv, Zhiliang Qiao, Qiang Li:
Overview of methods to increase linearity of high-performance ADC. ICICDT 2015: 1-4 - Philip X.-L. Feng:
NEMS switches: Opportunities and challenges in emerging IC technologies. ICICDT 2015: 1-6 - Nathalie Fievet, Praveen Raghavan, Rogier Baert, Frédéric Robert, Abdelkarim Mercha, Diederik Verkest, Aaron Thean:
Impact of device and interconnect process variability on clock distribution. ICICDT 2015: 1-4 - Bogdan Govoreanu, Leqi Zhang, Malgorzata Jurczak:
Selectors for high density crosspoint memory arrays: Design considerations, device implementations and some challenges ahead. ICICDT 2015: 1-4 - Anuj Grover, Promod Kumar, Mohammad Daud, G. S. Visweswaran, Chittoor R. Parthasarathy, Jean-Philippe Noel, David Turgis, Bastien Giraud, Guillaume Moritz:
Low Standby Power Capacitively Coupled Sense Amplifier for wide voltage range operation of dual rail SRAMs. ICICDT 2015: 1-4 - Taro Ikeda, Akira Tanihara, Nobuhiko Yamamoto, Shigeru Kasai, Koji Eriguchi, Kouichi Ono:
Plasma-induced photon irradiation damage on low-k dielectrics enhanced by Cu-line layout. ICICDT 2015: 1-4 - Athanasios Kiouseloglou, Gabriele Navarro, Alessandro Cabrini, Guido Torelli, Luca Perniola:
Current pulse generator for multilevel cell programming of innovative PCM. ICICDT 2015: 1-4 - Ashish Kumar, Vinay Kumar, Dhori Kedar Janardan, G. S. Visweswaran, Kaushik Saha:
A 6T-SRAM in 28nm FDSOI technology with Vmin of 0.52V using assisted read and write operation. ICICDT 2015: 1-4 - Duc-Hung Le, Nobuyuki Sugii, Shiro Kamohara, Xuan-Thuan Nguyen, Koichiro Ishibashi, Cong-Kha Pham:
Design of a low-power fixed-point 16-bit digital signal processor using 65nm SOTB process. ICICDT 2015: 1-4 - Ronald P. Luijten, Matteo Cossale, Rolf Clauberg, Andreas C. Döring:
Power measurements and cooling of the DOME 28nm 1.8GHz 24-thread ppc64 μServer compute node. ICICDT 2015: 1-4 - Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Piet Vanmeerbeek, Peter Moens:
Trapping induced parasitic effects in GaN-HEMT for power switching applications. ICICDT 2015: 1-4 - Yuichiro Mitani, Kazuya Matsuzawa:
Simple technique for prediction of breakdown voltage of ultrathin gate insulator under ESD testing. ICICDT 2015: 1-4 - Kenichi Miyaguchi, Bertrand Parvais, Lars-Åke Ragnarsson, Piet Wambacq, Praveen Raghavan, Abdelkarim Mercha, Anda Mocuta, Diederik Verkest, Aaron Thean:
Modeling FinFET metal gate stack resistance for 14nm node and beyond. ICICDT 2015: 1-4 - Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yongxun Liu, Takashi Matsukawa, Yuki Ishikawa, Kazuhiko Endo, Shin-ichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara:
PBTI for N-type tunnel FinFETs. ICICDT 2015: 1-4 - Yukimasa Okada, Koji Eriguchi, Kouichi Ono:
Surface orientation dependence of ion bombardment damage during plasma processing. ICICDT 2015: 1-5 - Herman Oprins, Vladimir Cherman, Geert Van der Plas, F. L. T. Maggioni, Joeri De Vos, Eric Beyne:
Thermal experimental and modeling analysis of high power 3D packages. ICICDT 2015: 1-4
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