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Meishoku Masahara
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2010 – 2019
- 2015
- [c10]Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yongxun Liu, Takashi Matsukawa, Yuki Ishikawa, Kazuhiko Endo
, Shin-ichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara:
PBTI for N-type tunnel FinFETs. ICICDT 2015: 1-4 - [c9]Guangwei Cong
, Takashi Matsukawa, Keijiro Suzuki, Ken Tanizawa, Sang-Hun Kim, Tadashi Chiba, Hirofumi Tadokoro, Masashi Yanagihara, Morifumi Ohno, Haruhiko Kuwatsuka, Yasushi Igarashi, Meishoku Masahara, Hiroshi Ishikawa, Kazuhiro Ikeda, Shu Namiki
, Hitoshi Kawashima:
Power-efficient gray-scale control of silicon thermo-optic phase shifters by pulse width modulation using monolithically integrated MOSFET. OFC 2015: 1-3 - 2014
- [j5]Yasushi Igarashi
, Tadashi Chiba, Shin-ichi O'Uchi
, Meishoku Masahara
, Kunihiro Sakamoto
:
SOI CMOS Voltage Multiplier Circuits with Body Bias Control Technique for Battery-Less Wireless Sensor System. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. 97-A(3): 741-748 (2014) - [c8]Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo
, Shin-ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota:
Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance. ESSDERC 2014: 182-185 - [c7]Shinji Migita, Takashi Matsukawa, Takahiro Mori, Koichi Fukuda, Yukinori Morita, Wataru Mizubayashi, Kazuhiko Endo
, Yongxun Liu, Shin-ichi O'Uchi, Meishoku Masahara, Hiroyuki Ota:
Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration. ESSDERC 2014: 278-281 - 2013
- [j4]Kazuhiko Endo
, Shin-ichi O'Uchi, Takashi Matsukawa
, Yongxun Liu
, Meishoku Masahara
:
Independent-Double-Gate FinFET SRAM Technology. IEICE Trans. Electron. 96-C(4): 413-423 (2013) - [c6]Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo
, Shin-ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota:
Performance limit of parallel electric field tunnel FET and improvement by modified gate and channel configurations. ESSDERC 2013: 45-48 - [c5]Wataru Mizubayashi, Koichi Fukuda, Takahiro Mori, Kazuhiko Endo
, Yongxun Liu, Takashi Matsukawa, Shin-ichi O'Uchi, Yuki Ishikawa, Shinji Migita, Yukinori Morita, Akihito Tanabe, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara, Hiroyuki Ota:
Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes. ESSDERC 2013: 202-205 - 2012
- [j3]Shin-ichi O'Uchi
, Kazuhiko Endo
, Takashi Matsukawa
, Yongxun Liu
, Tadashi Nakagawa, Yuki Ishikawa, Junichi Tsukada, Hiromi Yamauchi, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto
, Meishoku Masahara
:
A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology. IEICE Trans. Electron. 95-C(4): 686-695 (2012) - [j2]Hideo Sakai, Shin-ichi O'Uchi
, Takashi Matsukawa
, Kazuhiko Endo
, Yongxun Liu
, Junichi Tsukada, Yuki Ishikawa, Tadashi Nakagawa, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto
, Meishoku Masahara
, Hiroki Ishikuro:
High-Frequency Precise Characterization of Intrinsic FinFET Channel. IEICE Trans. Electron. 95-C(4): 752-760 (2012) - [c4]Yukinori Morita, Shinji Migita, Wataru Mizubayashi, Meishoku Masahara, Hiroyuki Ota:
Two-step annealing effects on ultrathin EOT higher-k (k = 40) ALD-HfO2 gate stacks. ESSDERC 2012: 81-84 - 2010
- [c3]Shin-ichi O'Uchi, Kazuhiko Endo
, Yongxun Liu, Tadashi Nakagawa, Takashi Matsukawa, Yuki Ishikawa, Junichi Tsukada, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara:
Realization of 0.7-V analog circuits by adaptive-Vt operation of FinFET. CICC 2010: 1-4 - [c2]Shin-ichi O'Uchi, Kazuhiko Endo
, Yongxun Liu, Tadashi Nakagawa, Takashi Matsukawa, Yuki Ishikawa, Junichi Tsukada, Hiromi Yamauchi, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara:
0.5V FinFET SRAM with dynamic threshold control of pass gates for salvaging malfunctioned bits. ESSCIRC 2010: 474-477
2000 – 2009
- 2008
- [j1]Shin-ichi O'Uchi
, Meishoku Masahara
, Kazuhiko Endo
, Yongxun Liu
, Takashi Matsukawa
, Kunihiro Sakamoto
, Toshihiro Sekigawa, Hanpei Koike, Eiichi Suzuki:
FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction. IEICE Trans. Electron. 91-C(4): 534-542 (2008) - 2007
- [c1]Shin-ichi O'Uchi
, Meishoku Masahara
, Kunihiro Sakamoto
, Kazuhiko Endo
, Yongxun Liu
, Takashi Matsukawa
, Toshihiro Sekigawa, Hanpei Koike, Eiichi Suzuki:
Flex-Pass-Gate SRAM Design for Static Noise Margin Enhancement Using FinFET-Based Technology. CICC 2007: 33-36
Coauthor Index
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