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ORCIDDoyoung Jang
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2020 – today
- 2024
[j5]Doyoung Jang
, Sungsik Wang, Hyun Kim, Hosung Choo:
Design of a Shared-Aperture Dual-Loop Antenna Using a Mutual Complementary Shape to Improve an Electromagnetic Transparent Characteristics Between S/X-Band Elements. IEEE Access 12: 21199-21206 (2024)- [j4]Taekyeong Jin, Jeongmin Cho, Doyoung Jang, Hosung Choo:
Prediction of Atmospheric Duct Conditions from a Clutter Power Spectrum Using Deep Learning. Remote. Sens. 16(4): 674 (2024) - [j3]Doyoung Jang, Nammoon Kim, Hosung Choo:
Kriging Interpolation for Constructing Database of the Atmospheric Refractivity in Korea. Remote. Sens. 16(13): 2379 (2024) - 2021
- [j2]Doyoung Jang, Nak Kyoung Kong, Hosung Choo:
Design of an On-Glass 5G Monopole Antenna for a Vehicle Window Glass. IEEE Access 9: 152749-152755 (2021) - 2020
- [c12]Alessio Spessot, Bertrand Parvais, Amita Rawat, Kenichi Miyaguchi, Pieter Weckx, Doyoung Jang, Julien Ryckaert:
Device Scaling roadmap and its implications for Logic and Analog platform. BCICTS 2020: 1-8
2010 – 2019
- 2018
- [c11]Bertrand Parvais, Geert Hellings, Marko Simicic, Pieter Weckx, Jérôme Mitard, Doyoung Jang, V. Deshpande, B. van Liempc, Anabela Veloso, A. Vandooren, Niamh Waldron, Piet Wambacq, Nadine Collaert, Diederik Verkest:
Scaling CMOS beyond Si FinFET: an analog/RF perspective. ESSDERC 2018: 158-161 - 2017
- [c10]Mohit Kumar Gupta, Pieter Weckx, Stefan Cosemans, Pieter Schuddinck, Rogier Baert, Dmitry Yakimets, Doyoung Jang, Yasser Sherazi, Praveen Raghavan, Alessio Spessot, Anda Mocuta, Wim Dehaene:
Device circuit and technology co-optimisation for FinFET based 6T SRAM cells beyond N7. ESSDERC 2017: 256-259 - [c9]Mohit Kumar Gupta, Pieter Weckx, Stefan Cosemans, Pieter Schuddinck, Rogier Baert, Doyoung Jang, Yasser Sherazi, Praveen Raghavan, Alessio Spessot, Anda Mocuta, Wim Dehaene:
Dedicated technology threshold voltage tuning for 6T SRAM beyond N7. ICICDT 2017: 1-4 - 2016
- [c8]Nahyeon Lee, Doyoung Jang, Yeji Kim, Byung-Chull Bae, Jun-Dong Cho:
DenTeach: A Device for Fostering Children's Good Tooth-brushing Habits. IDC 2016: 619-624 - [c7]Praveen Raghavan, Marie Garcia Bardon, Peter Debacker, P. Schuddinck, Doyoung Jang, Rogier Baert, Diederik Verkest, Aaron Voon-Yew Thean:
5nm: Has the time for a device change come? ISQED 2016: 275-277 - 2015
- [j1]Halil Kükner, Pieter Weckx, Sébastien Morrison, Jacopo Franco, Maria Toledano-Luque, Moonju Cho, Praveen Raghavan, Ben Kaczer, Doyoung Jang, Kenichi Miyaguchi, Marie Garcia Bardon, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken:
Comparison of NBTI aging on adder architectures and ring oscillators in the downscaling technology nodes. Microprocess. Microsystems 39(8): 1039-1051 (2015) - [c6]Praveen Raghavan, Marie Garcia Bardon, Doyoung Jang, P. Schuddinck, Dmitry Yakimets, Julien Ryckaert, Abdelkarim Mercha, Naoto Horiguchi, Nadine Collaert, Anda Mocuta, Dan Mocuta, Zsolt Tokei, Diederik Verkest, Aaron Thean, An Steegen:
Holisitic device exploration for 7nm node. CICC 2015: 1-5 - [c5]Marie Garcia Bardon, P. Schuddinck, Praveen Raghavan, Doyoung Jang, Dmitry Yakimets, Abdelkarim Mercha, Diederik Verkest, Aaron Thean:
Dimensioning for power and performance under 10nm: The limits of FinFETs scaling. ICICDT 2015: 1-4 - [c4]Kazuyuki Tomida, Keizo Hiraga, Morin Dehan, Geert Hellings, Doyoung Jang, Kenichi Miyaguchi, Thomas Chiarella, Minsoo Kim, Anda Mocuta, Naoto Horiguchi, Abdelkarim Mercha, Diederik Verkest, Aaron Thean:
Impact of fin shape variability on device performance towards 10nm node. ICICDT 2015: 1-4 - [c3]Dmitry Yakimets, Doyoung Jang, Praveen Raghavan, Geert Eneman, Hans Mertens, P. Schuddinck, Arindam Mallik, Marie Garcia Bardon, Nadine Collaert, Abdelkarim Mercha, Diederik Verkest, Aaron Thean, Kristin De Meyer:
Lateral NWFET optimization for beyond 7nm nodes. ICICDT 2015: 1-4 - 2014
- [c2]Julien Ryckaert, Praveen Raghavan, Rogier Baert, Marie Garcia Bardon, Mircea Dusa, Arindam Mallik, Sushil Sakhare, Boris Vandewalle, Piet Wambacq, Bharani Chava, Kris Croes, Morin Dehan, Doyoung Jang, Philippe Leray, Tsung-Te Liu, Kenichi Miyaguchi, Bertrand Parvais, Pieter Schuddinck, Philippe Weemaes, Abdelkarim Mercha, Jürgen Bömmels, Naoto Horiguchi, Greg McIntyre, Aaron Thean, Zsolt Tökei, Shaunee Cheng, Diederik Verkest, An Steegen:
Design Technology co-optimization for N10. CICC 2014: 1-8 - 2013
- [c1]Doyoung Jang, Marie Garcia Bardon, Dmitry Yakimets, Kenichi Miyaguchi, An De Keersgieter, Thomas Chiarella, Romain Ritzenthaler, Morin Dehan, Abdelkarim Mercha:
STI and eSiGe source/drain epitaxy induced stress modeling in 28 nm technology with replacement gate (RMG) process. ESSDERC 2013: 159-162
Coauthor Index
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