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"Fault-tolerant designs for 256 Mb DRAM."
Toshiaki Kirihata et al. (1996)
- Toshiaki Kirihata, Yohji Watanabe, Hing Wong, John K. DeBrosse, Munehiro Yoshida, Daisuke Kato, Shuso Fujii, Matthew R. Wordeman, Peter Poechmueller, Stephen A. Parke, Yoshiaki Asao:
Fault-tolerant designs for 256 Mb DRAM. IEEE J. Solid State Circuits 31(4): 558-566 (1996)
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