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Journal Articles
- 2014
[j13]Chunmeng Dou, Tomoya Shoji, Kazuhiro Nakajima, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii
, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement. Microelectron. Reliab. 54(4): 725-729 (2014)- 2012
- [j12]Chunmeng Dou, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai:
Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer. Microelectron. Reliab. 52(4): 688-691 (2012) - [j11]M. Mamatrishat, T. Kubota, T. Seki, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai:
Oxide and interface trap densities estimation in ultrathin W/La2O3/Si MOS capacitors. Microelectron. Reliab. 52(6): 1039-1042 (2012) - 2011
- [j10]Hiroshi Iwai, Kenji Natori, Kenji Shiraishi, Jun-ichi Iwata, Atsushi Oshiyama, Keisaku Yamada, Kenji Ohmori, Kuniyuki Kakushima, Parhat Ahmet:
Si nanowire FET and its modeling. Sci. China Inf. Sci. 54(5): 1004-1011 (2011) - [j9]D. Zade, Soshi Sato, Kuniyuki Kakushima, A. Srivastava, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Chandan Kumar Sarkar, Hiroshi Iwai:
Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise. Microelectron. Reliab. 51(4): 746-750 (2011) - [j8]Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet, Kenji Ohmori, Kenji Natori, Keisaku Yamada, Hiroshi Iwai:
Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors. Microelectron. Reliab. 51(5): 879-884 (2011) - 2010
- [j7]Yusuke Kobayashi, Kuniyuki Kakushima, Parhat Ahmet, V. Ramgopal Rao, Kazuo Tsutsui, Hiroshi Iwai:
Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness. Microelectron. Reliab. 50(3): 332-337 (2010) - [j6]Kuniyuki Kakushima, K. Okamoto, T. Koyanagi, M. Kouda, Kiichi Tachi, Takamasa Kawanago, J. Song, Parhat Ahmet, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai:
SrO capping effect for La2O3/Ce-silicate gate dielectrics. Microelectron. Reliab. 50(3): 356-359 (2010) - [j5]Kuniyuki Kakushima, Kiichi Tachi, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai:
Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics. Microelectron. Reliab. 50(6): 790-793 (2010) - 2008
- [j4]Parhat Ahmet, Kentaro Nakagawa, Kuniyuki Kakushima, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai:
Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack. Microelectron. Reliab. 48(11-12): 1769-1771 (2008) - 2007
- [j3]Joel Molina Reyes, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai:
Carrier separation and Vth measurements of W-La2O3 gated MOSFET structures after electrical stress. IEICE Electron. Express 4(6): 185-191 (2007) - [j2]Yusuke Kobayashi, C. Raghunathan Manoj, Kazuo Tsutsui, Venkanarayan Hariharan, Kuniyuki Kakushima, V. Ramgopal Rao, Parhat Ahmet, Hiroshi Iwai:
Parasitic Effects in Multi-Gate MOSFETs. IEICE Trans. Electron. 90-C(10): 2051-2056 (2007) - 2006
- [j1]Jin-Aun Ng, Nobuyuki Sugii, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai:
Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing. IEICE Electron. Express 3(13): 316-321 (2006)
Conference and Workshop Papers
- 2012
- [c1]Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kazuo Tsutsui, Kenji Natori, Takeo Hattori, Hiroshi Iwai:
(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture. ESSDERC 2012: 89-92
Coauthor Index
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