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Journal Articles
- 2014
[j4]X. Shawn Wang, Xin Wang, Fei Lu, Chen Zhang, Zongyu Dong, Li Wang, Rui Ma, Zitao Shi, Albert Z. Wang, Mau-Chung Frank Chang
, Dawn Wang, Alvin J. Joseph, C. Patrick Yue:
Concurrent Design Analysis of High-Linearity SP10T Switch With 8.5 kV ESD Protection. IEEE J. Solid State Circuits 49(9): 1927-1941 (2014)- 2009
- [j3]Li Zhang, Xueyi Yu, Yuanfeng Sun, Woogeun Rhee, Dawn Wang, Zhihua Wang, Hongyi Chen:
A Hybrid Spur Compensation Technique for Finite-Modulo Fractional-N Phase-Locked Loops. IEEE J. Solid State Circuits 44(11): 2922-2934 (2009) - 2003
- [j2]Alvin J. Joseph, James S. Dunn, Greg G. Freeman, David L. Harame, Douglas Coolbaugh, Robert A. Groves, Kenneth J. Stein, Rich Volant, Seshadri Subbanna, V. S. Marangos, Stephen St. Onge, Ebenezer Eshun, P. Cooper, Jeffrey B. Johnson, Jae-Sung Rieh, Basanth Jagannathan, Vidhya Ramachandran, David Ahlgren, Dawn Wang, X. Wang:
Product applications and technology directions with SiGe BiCMOS. IEEE J. Solid State Circuits 38(9): 1471-1478 (2003) - [j1]Duljit S. Malhi, Lawrence E. Larson, Dawn Wang, Cuneyt Demirdag, Victoria Pereira:
SiGe W-CDMA transmitter for mobile terminal application. IEEE J. Solid State Circuits 38(9): 1570-1574 (2003)
Conference and Workshop Papers
- 2018
- [c6]Chenkun Wang, Fei Lu, Qi Chen, Feilong Zhang, Cheng Li, Dawn Wang, Albert Z. Wang:
A study of impacts of ESD protection on 28/38GHz RF switches in 45nm SOI CMOS for 5G mobile applications. RWS 2018: 157-160 - 2017
- [c5]Chaojiang Li, Min Wang, Taiyun Chi, Arvind Kumar, Myra Boenke, Dawn Wang, Ned Cahoon, Anirban Bandyopadhyay, Alvin J. Joseph, Hua Wang:
5G mm-Wave front-end-module design with advanced SOI process. ASICON 2017: 1017-1020 - 2015
- [c4]Chaojiang Li, Xiaoxia Wang, Vibhor Jain, Hanyi Ding, Myra Boenke, Dawn Wang, Randy Wolf, Alvin J. Joseph:
2.4/5.5GHz LNA switch designs based on high resistive substrate 0.35um SiGe BiCMOS. ASICON 2015: 1-4 - 2013
- [c3]Chaojiang Li, Dawn Wang, Myra Boenke, Ted Letavic, John Cohn:
An integrated zigbee transmitter and DC-DC converter on 0.18μm HV RF CMOS technology. ASICON 2013: 1-4 - [c2]X. Shawn Wang, Xin Wang, Fei Lu, Li Wang, Rui Ma, Zongyu Dong, Li Sun, Albert Z. Wang, C. Patrick Yue, Dawn Wang, Alvin J. Joseph:
A smartphone SP10T T/R switch in 180-nm SOI CMOS with 8kV+ ESD protection by co-design. CICC 2013: 1-4 - 2011
- [c1]Jingyang Zhang, Dawn Wang, Hanyi Ding, John Gillis, Wan Ni, Susan L. Sweeney, Dasheng Fang:
SiGe HBT Power Amplifier design using 0.35 µm BiCMOS technology with through-silicon-via. ASICON 2011: 1082-1085
Coauthor Index
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