"A smartphone SP10T T/R switch in 180-nm SOI CMOS with 8kV+ ESD protection ..."

X. Shawn Wang et al. (2013)

Details and statistics

DOI: 10.1109/CICC.2013.6658474

access: closed

type: Conference or Workshop Paper

metadata version: 2020-12-21

a service of  Schloss Dagstuhl - Leibniz Center for Informatics