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Antonio Gnudi
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Publications
- 2018
- [j17]Davide Cornigli, Susanna Reggiani, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, Davide Fabiani, D. Varghese, Enis Tuncer, S. Krishnan, Luu Nguyen:
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture. Microelectron. Reliab. 88-90: 752-755 (2018) - [j15]Susanna Reggiani, Luigi Balestra, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, J. Dobrzynska, J. Vobecký, C. Tosi:
TCAD study of DLC coatings for large-area high-power diodes. Microelectron. Reliab. 88-90: 1094-1097 (2018) - 2015
- [c18]Giorgio Baccarani, Emanuele Baravelli, Elena Gnani, Antonio Gnudi, Susanna Reggiani:
Theoretical analyses and modeling for nanoelectronics. ESSCIRC 2015: 4-9 - [c17]Giorgio Baccarani, Emanuele Baravelli, Elena Gnani, Antonio Gnudi, Susanna Reggiani:
Theoretical analyses and modeling for nanoelectronics. ESSDERC 2015: 4-9 - 2014
- [c16]F. Villani, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs. ESSDERC 2014: 262-265 - [c15]Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani:
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation. ESSDERC 2014: 313-316 - [c14]I. Imperiale, Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Luu Nguyen, Marie Denison:
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime. ESSDERC 2014: 325-328 - [c13]F. Monti, Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Stefano Poli, Ming-Yeh Chuang, Weidong Tian, D. Varghese, Rick Wise:
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions. ESSDERC 2014: 333-336 - 2013
- [j14]Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
Deterministic solution of the 1D Boltzmann transport equation: Application to the study of current transport in nanowire FETs. Microelectron. J. 44(1): 20-25 (2013) - [c12]Emanuele Baravelli, Elena Gnani, Roberto Grassi, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
Complementary n- and p-type TFETs on the same InAs/Al0.05Ga0.95Sb platform. ESSDERC 2013: 69-72 - [c11]Giovanni Betti Beneventi, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty. ESSDERC 2013: 73-76 - [c10]Pasquale Maiorano, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
Gate stack optimization to minimize power consumption in super-lattice fets. ESSDERC 2013: 81-84 - [c9]Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Stefano Poli, Rick Wise, Ming-Yeh Chuang, Weidong Tian, Marie Denison:
Modeling and characterization of hot-carrier stress degradation in power MOSFETs (invited). ESSDERC 2013: 91-94 - [c8]Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani:
DC and small-signal numerical simulation of graphene base transistor for terahertz operation. ESSDERC 2013: 314-317 - 2012
- [c7]Elena Gnani, Susanna Reggiani, Antonio Gnudi, Giorgio Baccarani:
Drain-conductance optimization in nanowire TFETs. ESSDERC 2012: 105-108 - 1994
- [j7]Alberto Leone, Antonio Gnudi, Giorgio Baccarani:
Hydrodynamic simulation of semiconductor devices operating at low temperature. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 13(11): 1400-1408 (1994) - 1993
- [j6]Antonio Gnudi, Davide Ventura, Giorgio Baccarani:
Modeling impact ionization in a BJT by means of spherical harmonics expansion of the Boltzmann transport equation. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 12(11): 1706-1713 (1993) - 1992
- [j5]Wai Lee, Steven E. Laux, Massimo V. Fischetti, Giorgio Baccarani, Antonio Gnudi, Johannes M. C. (Hans) Stork, Jack A. Mandelman, Emmanuel F. Crabbé, Matthew R. Wordeman, Farouk Odeh:
Numerical modeling of advanced semiconductor devices. IBM J. Res. Dev. 36(2): 208-232 (1992) - 1989
- [j3]Paolo Ciampolini, Alessandro Forghieri, Anna Pierantoni, Antonio Gnudi, Massimo Rudan, Giorgio Baccarani:
Adaptive mesh generation preserving the quality of the initial grid. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 8(5): 490-500 (1989) - 1988
- [j2]Alessandro Forghieri, Roberto Guerrieri, Paolo Ciampolini, Antonio Gnudi, Massimo Rudan, Giorgio Baccarani:
A new discretization strategy of the semiconductor equations comprising momentum and energy balance. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 7(2): 231-242 (1988) - 1987
- [j1]Antonio Gnudi, Paolo Ciampolini, Roberto Guerrieri, Massimo Rudan, Giorgio Baccarani:
Sensitivity Analysis for Device Design. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 6(5): 879-885 (1987)
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