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Tilo Brodbeck , Kai Esmark , Wolfgang Stadler : CDM tests on interface test chips for the verification of ESD protection concepts. Microelectron. Reliab. 49 (12 ) : 1470-1475 (2009 )share record
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H. El Brouji , Olivier Briat , Jean-Michel Vinassa , Hervé Henry , Eric Woirgard : Analysis of the dynamic behavior changes of supercapacitors during calendar life test under several voltages and temperatures conditions. Microelectron. Reliab. 49 (9-11 ) : 1391-1397 (2009 )export record
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journals/mr/BrusamarelloWS09 share record
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Lucas Brusamarello , Gilson I. Wirth , Roberto da Silva : Statistical RTS model for digital circuits. Microelectron. Reliab. 49 (9-11 ) : 1064-1069 (2009 )share record
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Giovanni Busatto , Carmine Abbate , Francesco Iannuzzo , P. Cristofaro : Instable mechanisms during unclamped operation of high power IGBT modules. Microelectron. Reliab. 49 (9-11 ) : 1363-1369 (2009 )export record
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journals/mr/BusattoCIPSV09 share record
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Giovanni Busatto , Giuseppe Currò , Francesco Iannuzzo , Alberto Porzio , Annunziata Sanseverino , Francesco Velardi : Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions. Microelectron. Reliab. 49 (9-11 ) : 1033-1037 (2009 )share record
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C. Cantin , G. Gove , G. Polisski : Verification and reduction of surface charging during high/medium current implantations by implementing plasma damage monitoring. Microelectron. Reliab. 49 (2 ) : 215-220 (2009 )share record
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C. Cantin , C. Laviron , G. Gove : Charging control on high energy implanters: A process requirement demonstrated by plasma damage monitoring. Microelectron. Reliab. 49 (2 ) : 209-214 (2009 )export record
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journals/mr/CarastroCCJBW09 share record
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Fabio Carastro , Alberto Castellazzi , Jon C. Clare , M. C. Johnson , Michael J. Bland , Patrick W. Wheeler : Reliability considerations in pulsed power resonant conversion. Microelectron. Reliab. 49 (9-11 ) : 1352-1357 (2009 )export record
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journals/mr/Celik-ButlerDTTZ09 share record
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Zeynep Çelik-Butler , Siva Prasad Devireddy , Hsing-Huang Tseng , Philip J. Tobin , Ania Zlotnicka : A low-frequency noise model for advanced gate-stack MOSFETs. Microelectron. Reliab. 49 (2 ) : 103-112 (2009 )share record
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Kuei-Hu Chang : Evaluate the orderings of risk for failure problems using a more general RPN methodology. Microelectron. Reliab. 49 (12 ) : 1586-1596 (2009 )share record
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Brook Huang-Lin Chao , Xuefeng Zhang , Seung-Hyun Chae , Paul S. Ho : Recent advances on kinetic analysis of electromigration enhanced intermetallic growth and damage formation in Pb-free solder joints. Microelectron. Reliab. 49 (3 ) : 253-263 (2009 )share record
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F. X. Che , John H. L. Pang : Vibration reliability test and finite element analysis for flip chip solder joints. Microelectron. Reliab. 49 (7 ) : 754-760 (2009 )share record
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Jiunn Chen , Yi-Shao Lai : Towards elastic anisotropy and strain-induced void formation in Cu-Sn crystalline phases. Microelectron. Reliab. 49 (3 ) : 264-268 (2009 )export record
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journals/mr/ChentirJVBVA09 share record
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Mohamed-Tahar Chentir , J.-B. Jullien , B. Valtchanov , Emilien Bouyssou , Laurent Ventura , Christine Anceau : Percolation theory applied to PZT thin films capacitors breakdown mechanisms. Microelectron. Reliab. 49 (9-11 ) : 1074-1078 (2009 )share record
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Te-Kuang Chiang : A new two-dimensional analytical subthreshold behavior model for short-channel tri-material gate-stack SOI MOSFET's. Microelectron. Reliab. 49 (2 ) : 113-119 (2009 )share record
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Te-Kuang Chiang : A new two-dimensional subthreshold behavior model for the short-channel asymmetrical dual-material double-gate (ADMDG) MOSFET's. Microelectron. Reliab. 49 (7 ) : 693-698 (2009 )export record
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journals/mr/ChidambaramHH09 share record
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Vivek Chidambaram , John Hald , Jesper Henri Hattel : Development of gold based solder candidates for flip chip assembly. Microelectron. Reliab. 49 (3 ) : 323-330 (2009 )share record
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Chel-Jong Choi , Ha-Yong Yang , Hyo-Bong Hong , Jin-Gyu Kim , Sung-Yong Chang , Jouhahn Lee : Characteristics of metal-oxide-semiconductor (MOS) device with Er metal gate on SiO2 film. Microelectron. Reliab. 49 (4 ) : 463-465 (2009 )share record
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Tsung-Lin Chou , Chien-Fu Huang , Cheng-Nan Han , Shin-Yueh Yang , Kuo-Ning Chiang : Fabrication process simulation and reliability improvement of high-brightness LEDs. Microelectron. Reliab. 49 (9-11 ) : 1244-1249 (2009 )export record
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journals/mr/ChowdhuryWBYRM09 share record
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N. A. Chowdhury , X. Wang , Gennadi Bersuker , Chadwin D. Young , N. Rahim , Durga Misra : Temperature dependent time-to-breakdown (TBD ) of TiN/HfO2 n-channel MOS devices in inversion. Microelectron. Reliab. 49 (5 ) : 495-498 (2009 )share record
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Mauro Ciappa , Luigi Mangiacapra , Maria Stangoni , Stephan Ott , Wolfgang Fichtner : Ensuring the reliability of electron beam crosslinked electric cables by the optimization of the dose depth distribution with Monte Carlo simulation. Microelectron. Reliab. 49 (9-11 ) : 972-976 (2009 )export record
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journals/mr/CiptokusumoWA09 share record
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Joharsyah Ciptokusumo , Kirsten Weide-Zaage , Oliver Aubel : Investigation of stress distribution in via bottom of Cu-via structures with different via form by means of submodeling. Microelectron. Reliab. 49 (9-11 ) : 1090-1095 (2009 )export record
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journals/mr/Crespo-YepesMRNA09 share record
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Albert Crespo-Yepes , Javier Martín-Martínez , Rosana Rodríguez , Montserrat Nafría , Xavier Aymerich : Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses. Microelectron. Reliab. 49 (9-11 ) : 1024-1028 (2009 )export record
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journals/mr/DammannPWBQMMAWMRBBRFS09 share record
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Maximilian Dammann , W. Pletschen , Patrick Waltereit , Wolfgang Bronner , Rüdiger Quay , Stefan Müller , Michael Mikulla , Oliver Ambacher , P. J. van der Wel , S. Murad , T. Rödle , R. Behtash , F. Bourgeois , K. Riepe , Martin Fagerlind , Einar Örn Sveinbjörnsson : Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems. Microelectron. Reliab. 49 (5 ) : 474-477 (2009 )export record
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journals/mr/DiattaBTMROB09 share record
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Marianne Diatta , Emilien Bouyssou , David Trémouilles , P. Martinez , F. Roqueta , O. Ory , Marise Bafleur : Failure mechanisms of discrete protection device subjected to repetitive electrostatic discharges (ESD). Microelectron. Reliab. 49 (9-11 ) : 1103-1106 (2009 )share record
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Fayçal Djeffal , Z. Ghoggali , Zohir Dibi , N. Lakhdar : Analytical analysis of nanoscale multiple gate MOSFETs including effects of hot-carrier induced interface charges. Microelectron. Reliab. 49 (4 ) : 377-381 (2009 )share record
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Rainer Dudek , Ralf Döring , Christine Bombach , Bernd Michel : Simulation based analysis of secondary effects on solder fatigue. Microelectron. Reliab. 49 (8 ) : 839-845 (2009 )share record
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Laurent Dupont , Gerard Coquery , K. Kriegel , A. Melkonyan : Accelerated active ageing test on SiC JFETs power module with silver joining technology for high temperature application. Microelectron. Reliab. 49 (9-11 ) : 1375-1380 (2009 )share record
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Andrzej Dziedzic : IMAPS-CPMT Poland 2008 - Guest Editorial. Microelectron. Reliab. 49 (6 ) : 567-568 (2009 )share record
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Peter Ersland , Roberto Menozzi : Editorial. Microelectron. Reliab. 49 (5 ) : 467 (2009 )