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Myung-Hoon Choi
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2020 – today
- 2024
- [c8]Chang-Hyo Yu, Hyo-Eun Kim, Sungho Shin, Kyeongryeol Bong, Hyunsuk Kim, Yoonho Boo, Jaewan Bae, Minjae Kwon, Karim Charfi, Jinseok Kim, Hongyun Kim, Myeongbo Shim, Changsoo Ha, Wongyu Shin, Jae-Sung Yoon, Miock Chi, Byungjae Lee, Sungpill Choi, Donghan Kim, Jeongseok Woo, Seokju Yoon, Hyunje Jo, Hyunho Kim, Hyun-Seok Heo, Young-Jae Jin, Jiun Yu, Jaehwan Lee, Hyunsung Kim, Minhoo Kang, Seokhyeon Choi, Seung-Goo Kim, Myung-Hoon Choi, Jungju Oh, Yunseong Kim, Haejoon Kim, Sangeun Je, Junhee Ham, Juyeong Yoon, Jaedon Lee, Seonhyeok Park, Youngseob Park, Jaebong Lee, Boeui Hong, Jaehun Ryu, Hyunseok Ko, Kwanghyun Chung, Jongho Choi, Sunwook Jung, Yashael Faith Arthanto, Jonghyeon Kim, Heejin Cho, Hyebin Jeong, Sungmin Choi, Sujin Han, Junkyu Park, Kwangbae Lee, Sung-Il Bae, Jaeho Bang, Kyeong-Jae Lee, Yeongsang Jang, Jungchul Park, Sanggyu Park, Jueon Park, Hyein Shin, Sunghyun Park, Jinwook Oh:
2.4 ATOMUS: A 5nm 32TFLOPS/128TOPS ML System-on-Chip for Latency Critical Applications. ISSCC 2024: 42-44 - 2022
- [c7]Moosung Kim, Sung-Won Yun, Jungjune Park, Hyun Kook Park, Jungyu Lee, Yeong Seon Kim, Dae-Hoon Na, Sara Choi, Youngsun Song, Jonghoon Lee, Hyun-Jun Yoon, Kangbin Lee, Byunghoon Jeong, Sanglok Kim, Junhong Park, Cheon An Lee, Jaeyun Lee, Ji-Sang Lee, Jin Young Chun, Joonsuc Jang, Younghwi Yang, Seung Hyun Moon, Myung-Hoon Choi, Wontae Kim, Jungsoo Kim, Seok-Min Yoon, Pansuk Kwak, Myunghun Lee, Raehyun Song, Sunghoon Kim, Chiweon Yoon, Dongku Kang, Jin-Yub Lee, Jai Hyuk Song:
A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface. ISSCC 2022: 136-137 - 2020
- [c6]Doo-Hyun Kim, Hyunggon Kim, Sung-Won Yun, Youngsun Song, Jisu Kim, Sung-Min Joe, Kyung-Hwa Kang, Joonsuc Jang, Hyun-Jun Yoon, Kangbin Lee, Minseok Kim, Joonsoo Kwon, Jonghoo Jo, Sehwan Park, Jiyoon Park, Jisoo Cho, Sohyun Park, Garam Kim, Jinbae Bang, Heejin Kim, Jongeun Park, Deokwoo Lee, Seonyong Lee, Hwajun Jang, Hanjun Lee, Donghyun Shin, Jungmin Park, Jungkwan Kim, Jongmin Kim, Kichang Jang, II Han Park, Seung Hyun Moon, Myung-Hoon Choi, Pansuk Kwak, Joo-Yong Park, Youngdon Choi, Sanglok Kim, Seungjae Lee, Dongku Kang, Jeong-Don Lim, Dae-Seok Byeon, Ki-Whan Song, Jung-Hwan Choi, Sangjoon Hwang, Jaeheon Jeong:
13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate. ISSCC 2020: 218-220
2010 – 2019
- 2017
- [c5]Myung-Hoon Choi, Seungkyu Choi, Jaehyeong Sim, Lee-Sup Kim:
SENIN: An energy-efficient sparse neuromorphic system with on-chip learning. ISLPED 2017: 1-6 - 2016
- [j2]Woopyo Jeong, Jae-Woo Im, Doo-Hyun Kim, Sangwan Nam, Dong-Kyo Shim, Myung-Hoon Choi, Hyun-Jun Yoon, Dae-Han Kim, Youse Kim, Hyun Wook Park, Dong-Hun Kwak, Sang-Won Park, Seok-Min Yoon, Wook-Ghee Hahn, Jinho Ryu, Sang-Won Shim, Kyung-Tae Kang, Jeong-Don Ihm, In-Mo Kim, Doosub Lee, Ji-Ho Cho, Moosung Kim, Jae-hoon Jang, Sang-Won Hwang, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi:
A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate. IEEE J. Solid State Circuits 51(1): 204-212 (2016) - 2015
- [j1]Ki-Tae Park, Sangwan Nam, Dae-Han Kim, Pansuk Kwak, Doosub Lee, Yoon-Hee Choi, Myung-Hoon Choi, Dong-Hun Kwak, Doo-Hyun Kim, Minsu Kim, Hyun Wook Park, Sang-Won Shim, Kyung-Min Kang, Sang-Won Park, Kangbin Lee, Hyun-Jun Yoon, Kuihan Ko, Dong-Kyo Shim, Yang-Lo Ahn, Jinho Ryu, Donghyun Kim, Kyunghwa Yun, Joonsoo Kwon, Seunghoon Shin, Dae-Seok Byeon, Kihwan Choi, Jin-Man Han, Kyehyun Kyung, Jeong-Hyuk Choi, Kinam Kim:
Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming. IEEE J. Solid State Circuits 50(1): 204-213 (2015) - [c4]Jae-Woo Im, Woopyo Jeong, Doo-Hyun Kim, Sangwan Nam, Dong-Kyo Shim, Myung-Hoon Choi, Hyun-Jun Yoon, Dae-Han Kim, Youse Kim, Hyun Wook Park, Dong-Hun Kwak, Sang-Won Park, Seok-Min Yoon, Wook-Ghee Hahn, Jinho Ryu, Sang-Won Shim, Kyung-Tae Kang, Sung-Ho Choi, Jeong-Don Ihm, Young-Sun Min, In-Mo Kim, Doosub Lee, Ji-Ho Cho, Ohsuk Kwon, Ji-Sang Lee, Moosung Kim, Sang-Hyun Joo, Jae-hoon Jang, Sang-Won Hwang, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi:
7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate. ISSCC 2015: 1-3 - 2014
- [c3]Ki-Tae Park, Jin-Man Han, Dae-Han Kim, Sangwan Nam, Kihwan Choi, Minsu Kim, Pansuk Kwak, Doosub Lee, Yoon-Hee Choi, Kyung-Min Kang, Myung-Hoon Choi, Dong-Hun Kwak, Hyun Wook Park, Sang-Won Shim, Hyun-Jun Yoon, Doo-Hyun Kim, Sang-Won Park, Kangbin Lee, Kuihan Ko, Dong-Kyo Shim, Yang-Lo Ahn, Jeunghwan Park, Jinho Ryu, Donghyun Kim, Kyunghwa Yun, Joonsoo Kwon, Seunghoon Shin, Dongkyu Youn, Won-Tae Kim, Taehyun Kim, Sung-Jun Kim, Sungwhan Seo, Hyunggon Kim, Dae-Seok Byeon, Hyang-Ja Yang, Moosung Kim, Myong-Seok Kim, Jinseon Yeon, Jae-hoon Jang, Han-Soo Kim, Woonkyung Lee, Duheon Song, Sungsoo Lee, Kyehyun Kyung, Jeong-Hyuk Choi:
19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming. ISSCC 2014: 334-335 - 2012
- [c2]Seung-Hwan Shin, Dong-Kyo Shim, Jaeyong Jeong, Ohsuk Kwon, Sangyong Yoon, Myung-Hoon Choi, Tae-Young Kim, Hyun Wook Park, Hyun-Jun Yoon, Youngsun Song, Yoon-Hee Choi, Sang-Won Shim, Yang-Lo Ahn, Ki-Tae Park, Jin-Man Han, Kyehyun Kyung, Young-Hyun Jun:
A new 3-bit programming algorithm using SLC-to-TLC migration for 8MB/s high performance TLC NAND flash memory. VLSIC 2012: 132-133 - 2011
- [c1]Ki-Tae Park, Ohsuk Kwon, Sangyong Yoon, Myung-Hoon Choi, In-Mo Kim, Bo-Geun Kim, Min-Seok Kim, Yoon-Hee Choi, Seung-Hwan Shin, Youngson Song, Joo-Yong Park, Jae-Eun Lee, Chang-Gyu Eun, Ho-Chul Lee, Hyeong-Jun Kim, Jun-Hee Lee, Jong-Young Kim, Tae-Min Kweon, Hyun-Jun Yoon, Taehyun Kim, Dong-Kyo Shim, Jongsun Sel, Ji-Yeon Shin, Pansuk Kwak, Jin-Man Han, Keon-Soo Kim, Sungsoo Lee, Youngho Lim, Tae-Sung Jung:
A 7MB/s 64Gb 3-bit/cell DDR NAND flash memory in 20nm-node technology. ISSCC 2011: 212-213
Coauthor Index
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