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"A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate."

Woopyo Jeong et al. (2016)

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DOI: 10.1109/JSSC.2015.2474117

access: closed

type: Journal Article

metadata version: 2020-08-30

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  dblp key:
  - journals/jssc/JeongIKNSCYKKPK16
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  persistent URL:
  - https://dblp.org/rec/journals/jssc/JeongIKNSCYKKPK16
Woopyo Jeong, Jae-Woo Im, Doo-Hyun Kim, Sangwan Nam, Dong-Kyo Shim, Myung-Hoon Choi, Hyun-Jun Yoon, Dae-Han Kim, Youse Kim, Hyun Wook Park, Dong-Hun Kwak, Sang-Won Park, Seok-Min Yoon, Wook-Ghee Hahn, Jinho Ryu, Sang-Won Shim, Kyung-Tae Kang, Jeong-Don Ihm, In-Mo Kim, Doosub Lee, Ji-Ho Cho, Moosung Kim, Jae-hoon Jang, Sang-Won Hwang, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi:
A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate. IEEE J. Solid State Circuits 51(1): 204-212 (2016)

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