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"A 7MB/s 64Gb 3-bit/cell DDR NAND flash memory in 20nm-node technology."

Ki-Tae Park et al. (2011)

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DOI: 10.1109/ISSCC.2011.5746287

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-17

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  dblp key:
  - conf/isscc/ParkKYCKKKCSSPLELKLKKYKSSSKHKLLJ11
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  persistent URL:
  - https://dblp.org/rec/conf/isscc/ParkKYCKKKCSSPLELKLKKYKSSSKHKLLJ11
Ki-Tae Park, Ohsuk Kwon, Sangyong Yoon, Myung-Hoon Choi, In-Mo Kim, Bo-Geun Kim, Min-Seok Kim, Yoon-Hee Choi, Seung-Hwan Shin, Youngson Song, Joo-Yong Park, Jae-Eun Lee, Chang-Gyu Eun, Ho-Chul Lee, Hyeong-Jun Kim, Jun-Hee Lee, Jong-Young Kim, Tae-Min Kweon, Hyun-Jun Yoon, Taehyun Kim, Dong-Kyo Shim, Jongsun Sel, Ji-Yeon Shin, Pansuk Kwak, Jin-Man Han, Keon-Soo Kim, Sungsoo Lee, Youngho Lim, Tae-Sung Jung:
A 7MB/s 64Gb 3-bit/cell DDR NAND flash memory in 20nm-node technology. ISSCC 2011: 212-213

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