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Philippe Godignon

Name: dblp XML data dump
Creator: Schloss Dagstuhl - Leibniz Center for Informatics
Published: 1993
License: https://creativecommons.org/publicdomain/zero/1.0/
Keywords: dblp, XML, computer science, scholarly publications, metadata

◀ ▶ joint publications with José Millán

> Home > Persons > Philippe Godignon

Publications

2016
[j14]
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  - journals/mr/BanuSMMG16
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  - https://dblp.org/rec/journals/mr/BanuSMMG16
Viorel Banu, Victor Soler, Josep Montserrat, José Millán, Philippe Godignon:
Power cycling analysis method for high-voltage SiC diodes. Microelectron. Reliab. 64: 429-433 (2016)
2015
[j12]
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  - journals/tie/AlexandruBJMVTM15
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  - https://dblp.org/rec/journals/tie/AlexandruBJMVTM15
Mihaela Alexandru, Viorel Banu, Xavier Jordà, Josep Montserrat, Miquel Vellvehí, Dominique Tournier, José Millán, Philippe Godignon:
SiC Integrated Circuit Control Electronics for High-Temperature Operation. IEEE Trans. Ind. Electron. 62(5): 3182-3191 (2015)
[c6]
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  dblp key:
  - conf/essderc/SolerBMMGRM15
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  - https://dblp.org/rec/conf/essderc/SolerBMMGRM15
Victor Soler, Maxime Berthou, Andrei Mihaila, Josep Montserrat, Philippe Godignon, José Rebollo, José Millán:
Experimental analysis of planar edge terminations for high voltage 4H-SiC devices. ESSDERC 2015: 68-71
2014
[c5]
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  dblp key:
  - conf/essderc/FlorentinMGACS14
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  - https://dblp.org/rec/conf/essderc/FlorentinMGACS14
Matthieu Florentin, José Millán, Philippe Godignon, Mihaela Alexandru, Aurore Constant, Bernd Schmidt:
A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs. ESSDERC 2014: 150-153
2013
[c3]
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  dblp key:
  - conf/esscirc/BanuGAVJM13
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  - https://dblp.org/rec/conf/esscirc/BanuGAVJM13
Viorel Banu, Philippe Godignon, Mihaela Alexandru, Miquel Vellvehí, Xavier Jordà, José Millán:
High temperature-low temperature coefficient analog voltage reference integrated circuit implemented with SiC MESFETs. ESSCIRC 2013: 427-430
[c2]
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  - conf/essderc/AlexandruBGVM13
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  - https://dblp.org/rec/conf/essderc/AlexandruBGVM13
Mihaela Alexandru, Viorel Banu, Philippe Godignon, Miquel Vellvehí, José Millán:
4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits. ESSDERC 2013: 103-106
2012
[j9]
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  dblp key:
  - journals/mr/FontserePGMVPM12
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  - https://dblp.org/rec/journals/mr/FontserePGMVPM12
Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, Herbert De Vleeschouwer, John M. Parsey, Peter Moens:
Wafer scale and reliability investigation of thin HfO₂·AlGaN/GaN MIS-HEMTs. Microelectron. Reliab. 52(9-10): 2220-2223 (2012)
[j8]
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  - journals/mr/BanuGPJM12
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Viorel Banu, Philippe Godignon, Xavier Perpiñà, Xavier Jordà, José Millán:
Enhanced power cycling capability of SiC Schottky diodes using press pack contacts. Microelectron. Reliab. 52(9-10): 2250-2255 (2012)
[c1]
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  - conf/essderc/FontserePGMPM12
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Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, J. M. Parsey, Peter Moens:
High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C. ESSDERC 2012: 306-309
2008
[j6]
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  - journals/mr/BanuBJMGM08
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  - https://dblp.org/rec/journals/mr/BanuBJMGM08
Viorel Banu, Pierre Brosselard, Xavier Jordà, Josep Montserrat, Philippe Godignon, José Millán:
Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress. Microelectron. Reliab. 48(8-9): 1444-1448 (2008)
2007
[j4]
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  dblp key:
  - journals/mr/VellvehiJGFM07
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  - https://dblp.org/rec/journals/mr/VellvehiJGFM07
Miquel Vellvehí, Xavier Jordà, Philippe Godignon, Carles Ferrer, José Millán:
Coupled electro-thermal simulation of a DC/DC converter. Microelectron. Reliab. 47(12): 2114-2121 (2007)
2004
[j3]
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  dblp key:
  - journals/mj/Perez-TomasJGGVM04
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  - https://dblp.org/rec/journals/mj/Perez-TomasJGGVM04
Amador Pérez-Tomás, Xavier Jordà, Philippe Godignon, Jose Luis Gálvez, Miquel Vellvehí, José Millán:
IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process. Microelectron. J. 35(8): 659-666 (2004)
[j2]
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  dblp key:
  - journals/mj/PerpinaJMVGM04
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  - https://dblp.org/rec/journals/mj/PerpinaJMVGM04
Xavier Perpiñà, Xavier Jordà, N. Mestres, Miquel Vellvehí, Philippe Godignon, José Millán:
Self-heating experimental study of 600V PT-IGBTs under low dissipation energies. Microelectron. J. 35(10): 841-847 (2004)
2001
[j1]
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  dblp key:
  - journals/mr/BadilaGMBB01
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  - https://dblp.org/rec/journals/mr/BadilaGMBB01
Marian Badila, Philippe Godignon, José Millán, S. Berberich, Gheorghe Brezeanu:
The electron irradiation effects on silicon gate dioxide used for power MOS devices. Microelectron. Reliab. 41(7): 1015-1018 (2001)

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