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"The electron irradiation effects on silicon gate dioxide used for power ..."

Marian Badila et al. (2001)

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DOI: 10.1016/S0026-2714(01)00060-9

access: closed

type: Journal Article

metadata version: 2021-04-15

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Marian Badila, Philippe Godignon, José Millán, S. Berberich, Gheorghe Brezeanu:
The electron irradiation effects on silicon gate dioxide used for power MOS devices. Microelectron. Reliab. 41(7): 1015-1018 (2001)

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