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Publication search results
found 28 matches
- 2016
- Markus Andresen
, Giampaolo Buticchi
, Marco Liserre:
Study of reliability-efficiency tradeoff of active thermal control for power electronic systems. Microelectron. Reliab. 58: 119-125 (2016) - Alain Bensoussan:
How to quantify and predict long term multiple stress operation: Application to Normally-Off Power GaN transistor technologies. Microelectron. Reliab. 58: 103-112 (2016) - Alberto Castellazzi
, Asad Fayyaz
, Gianpaolo Romano, Li Yang, Michele Riccio
, Andrea Irace
:
SiC power MOSFETs performance, robustness and technology maturity. Microelectron. Reliab. 58: 164-176 (2016) - Diego Chiozzi
, Mirko Bernardoni, Nicola Delmonte, Paolo Cova
:
A simple 1-D finite elements approach to model the effect of PCB in electronic assemblies. Microelectron. Reliab. 58: 126-132 (2016) - Bernhard Czerny
, Golta Khatibi:
Interface reliability and lifetime prediction of heavy aluminum wire bonds. Microelectron. Reliab. 58: 65-72 (2016) - E. Efthymiou, P. Rutter, P. Whiteley:
A methodology for projecting SiO2 thick gate oxide reliability on trench power MOSFETs and its application on MOSFETs VGS rating. Microelectron. Reliab. 58: 26-32 (2016) - Ognjen Gagrica, Mateusz Marzec, Tadeusz Uhl:
Comparison of reliability impacts of two active power curtailment methods for PV micro-inverters. Microelectron. Reliab. 58: 133-140 (2016) - Pramod Ghimire
, Ionut Trintis
, Stig Munk-Nielsen
, Bjørn Rannestad:
On-state voltage drop based derating/uprating on a MW converter to improve reliability. Microelectron. Reliab. 58: 90-94 (2016) - Christian Herold
, Jörg Franke
, Riteshkumar Bhojani, Andre Schleicher, Josef Lutz
:
Requirements in power cycling for precise lifetime estimation. Microelectron. Reliab. 58: 82-89 (2016) - Francesco Iannuzzo
, Mauro Ciappa:
Reliability issues in power electronics. Microelectron. Reliab. 58: 1-2 (2016) - Ali Ibrahim
, Jean-Pierre Ousten, Richard Lallemand, Zoubir Khatir:
Power cycling issues and challenges of SiC-MOSFET power modules in high temperature conditions. Microelectron. Reliab. 58: 204-210 (2016) - Takuo Kikuchi, Mauro Ciappa:
Modeling the threshold voltage instability in SiC MOSFETs by multiphonon-assisted tunneling. Microelectron. Reliab. 58: 33-38 (2016) - Osamu Kusumoto, Atsushi Ohoka, Nobuyuki Horikawa, Kohtaro Tanaka, Masahiko Niwayama, Masao Uchida, Yoshihiko Kanzawa, Kazuyuki Sawada, Tetsuzo Ueda
:
Reliability of Diode-Integrated SiC Power MOSFET(DioMOS). Microelectron. Reliab. 58: 158-163 (2016) - Susana de Leon, Hugo Calleja
, Jesús Mina:
Reliability of photovoltaic systems using seasonal mission profiles and the FIDES methodology. Microelectron. Reliab. 58: 95-102 (2016) - Haoze Luo
, Francesco Iannuzzo
, Paula Diaz Reigosa, Frede Blaabjerg
, Wuhua Li, Xiangning He:
Modern IGBT gate driving methods for enhancing reliability of high-power converters - An overview. Microelectron. Reliab. 58: 141-150 (2016) - Gaudenzio Meneghesso, Matteo Meneghini
, Davide Bisi
, Isabella Rossetto, Tian-Li Wu
, Marleen Van Hove, Denis Marcon, Steve Stoffels
, Stefaan Decoutere, Enrico Zanoni
:
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate. Microelectron. Reliab. 58: 151-157 (2016) - Matteo Meneghini
, Oliver Hilt
, Clément Fleury
, Riccardo Silvestri, Mattia Capriotti, Gottfried Strasser
, Dionyz Pogany, Eldad Bahat-Treidel, Frank Brunner, A. Knauer, Joachim Würfl, Isabella Rossetto, Enrico Zanoni
, Gaudenzio Meneghesso, Stefano Dalcanale:
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. Microelectron. Reliab. 58: 177-184 (2016) - Paolo Mirone, Luca Maresca, Michele Riccio
, Giovanni Breglio
, Andrea Irace
:
On the avalanche ruggedness of optimized termination structure for 600 V punch-through IGBTs. Microelectron. Reliab. 58: 17-25 (2016) - Zhaoyang Peng, Yiyu Wang, Huajun Shen, Chengzhan Li, Jia Wu, Yun Bai, Kean Liu, Xinyu Liu:
Effects of combined NO and forming gas annealing on interfacial properties and oxide reliability of 4H-SiC MOS structures. Microelectron. Reliab. 58: 192-196 (2016) - Vladimir N. Popok
, Kristian Bonderup Pedersen
, Peter Kjær Kristensen, Kjeld Pedersen
:
Comprehensive physical analysis of bond wire interfaces in power modules. Microelectron. Reliab. 58: 58-64 (2016) - Angelo Raciti, Salvatore Musumeci
, Filippo Chimento, Giovanni Privitera:
A new thermal model for power MOSFET devices accounting for the behavior in unclamped inductive switching. Microelectron. Reliab. 58: 3-11 (2016) - Munaf Rahimo
, Frank Richter, Fabian Fischer, Umamaheswara Vemulapati, Arnost Kopta, Chiara Corvasce, Silvan Geissmann, Marco Bellini, Martin J. Bayer, Friedhelm Bauer:
The impact on power semiconductor device operation due to local electric field alterations in the planar junction termination. Microelectron. Reliab. 58: 51-57 (2016) - Resul Saritas, Mahmoud E. Khater, Sangtak Park
, T. Dagdelen, Eihab M. Abdel-Rahman
, Mustafa Yavuz
:
Techniques for dynamic analysis of bonding wire. Microelectron. Reliab. 58: 73-81 (2016) - Soshi Sato, Kikuo Yamabe, Tetsuo Endoh, Masaaki Niwa:
Formation mechanism of concave by dielectric breakdown on silicon carbide metal-oxide-semiconductor capacitor. Microelectron. Reliab. 58: 185-191 (2016) - K. V. Smith, J. Haller, Josep M. Guerrero
, R. P. Smith, R. Lal, YiFeng Wu:
Lifetime tests of 600-V GaN-on-Si power switches and HEMTs. Microelectron. Reliab. 58: 197-203 (2016) - Gerald Sölkner:
Ensuring the reliability of power electronic devices with regard to terrestrial cosmic radiation. Microelectron. Reliab. 58: 39-50 (2016) - Hiroshi Suzuki, Mauro Ciappa:
Electro-thermal simulation of current sharing in silicon and silicon carbide power modules under short circuit condition of types I and II. Microelectron. Reliab. 58: 12-16 (2016) - Xiang Wang, Alberto Castellazzi
, Pericle Zanchetta:
Observer based dynamic adaptive cooling system for power modules. Microelectron. Reliab. 58: 113-118 (2016)
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