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Publication search results
found 194 matches
- 2007
- Lei Zhang, Xia Guo, Ting Liang, Xiaoling Gu, Qiao Ming Lin, Guangdi Shen:
Color rendering and luminous efficacy of trichromatic and tetrachromatic LED-based white LEDs. Microelectron. J. 38(1): 1-6 (2007) - Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen, Cor Claeys:
Study of the linear kink effect in PD SOI nMOSFETs. Microelectron. J. 38(1): 114-119 (2007) - Fatima E. Ahmed, O. A. Yassin:
Fabrication and effect of the dielectric permittivity on the ideality factor of MEH-PPV Schottky diodes doped with electron acceptor fluorescent dyes. Microelectron. J. 38(8-9): 834-837 (2007) - S. Al-Harthi, A. Sellai:
Features of a tunnel diode oscillator at different temperatures. Microelectron. J. 38(8-9): 817-822 (2007) - Syed M. Alam, Chee Lip Gan, Carl V. Thompson, Donald E. Troxel:
Reliability computer-aided design tool for full-chip electromigration analysis and comparison with different interconnect metallizations. Microelectron. J. 38(4-5): 463-473 (2007) - A. Albina, P. L. Taberna, J. P. Cambronne, P. Simon, E. Flahaut, Thierry Lebey:
Influence of carbonaceous electrodes on capacitance and breakdown voltage for hybrid capacitor. Microelectron. J. 38(4-5): 642-648 (2007) - Massimo Alioto, Giuseppe Di Cataldo, Gaetano Palumbo:
Mixed Full Adder topologies for high-performance low-power arithmetic circuits. Microelectron. J. 38(1): 130-139 (2007) - G. M. Alonzo-Medina, A. I. Oliva:
An in situ technique to measure gold resistance oscillations during the first stages of growth. Microelectron. J. 38(3): 388-391 (2007) - Joaquín Alvarado, Antonio Cerdeira, Valeria Kilchytska, Denis Flandre:
Harmonic distortion analysis using an improved charge sheet model for PD SOI MOSFETs. Microelectron. J. 38(3): 321-326 (2007) - M. Alwan, B. Beydoun, K. Ketata, M. Zoaeter:
Bias temperature instability from gate charge characteristics investigations in N-Channel Power MOSFET. Microelectron. J. 38(6-7): 727-734 (2007) - Macho Anani, Hamza Abid, Zouaoui Chama, Christian Mathieu, Adlane Sayede, B. Khelifa:
InxGa1-xN refractive index calculations. Microelectron. J. 38(2): 262-266 (2007) - Macho Anani, Christian Mathieu, Hamza Abid, Sara Lebid, Youcef Amar:
Calculation of the effective indices of a GaN/InxGa1-xN optical guiding structure. Microelectron. J. 38(4-5): 505-508 (2007) - Viswanath Annampedu, Meghanad D. Wagh:
Reconfigurable approximate pattern matching architectures for nanotechnology. Microelectron. J. 38(3): 430-438 (2007) - Antonella Arena, Nicola Donato, Gaetano Saitta:
Electrical characterization of solid-state heterojunctions between PEDOT: PSS and an anionic polyelectrolyte. Microelectron. J. 38(6-7): 678-681 (2007) - Paolo Emilio Bagnoli, Carlo Bartoli, Fabio Stefani:
Validation of the DJOSER analytical thermal simulator for electronic power devices and assembling structures. Microelectron. J. 38(2): 185-196 (2007) - Yu Bai, X. Liu, L. Chen, Khizar-ul-Haq, M. A. Khan, Wen-Qing Zhu, X. Y. Jiang, Zhilin Zhang:
Organic thin-film field-effect transistors with MoO3/Al electrode and OTS/SiO2 bilayer gate insulator. Microelectron. J. 38(12): 1185-1190 (2007) - Buket D. Barkana, Hasan H. Erkaya:
A model for the resonant tunneling semiconductor-controlled rectifier. Microelectron. J. 38(8-9): 871-876 (2007) - Ferdinando Bedeschi, Chiara Boffino, Edoardo Bonizzoni, Claudio Resta, Guido Torelli:
Staircase-down SET programming approach for phase-change memories. Microelectron. J. 38(10-11): 1064-1069 (2007) - Mohamed Ali Belaïd, K. Ketata, Karine Mourgues, M. Gares, Mohamed Masmoudi, Jérôme Marcon:
Reliability study of power RF LDMOS device under thermal stress. Microelectron. J. 38(2): 164-170 (2007) - Brahim Benbakhti, Michel Rousseau, J.-C. de Jaeger:
Physical study of the dissipated power area in high electron mobility transistors for thermal modelling. Microelectron. J. 38(1): 7-13 (2007) - Andre E. Botha:
Multiband k·p Riccati equation for electronic structure and transport in type-II heterostructures. Microelectron. J. 38(3): 332-341 (2007) - Aimen Boubaker, Nabil Sghaier, M. Troudi, A. Kalboussi, Nicolas Baboux, A. Souifi:
A new SIMPLORER model for single-electron transistors. Microelectron. J. 38(8-9): 894-899 (2007) - Faouzi Bouchhima, Gabriela Nicolescu, El Mostapha Aboulhamid, Mohamed Abid:
Generic discrete-continuous simulation model for accurate validation in heterogeneous systems design. Microelectron. J. 38(6-7): 805-815 (2007) - M. H. Boukhatem, M. El Tahchi, G. W. El Haj Moussa, M. Ajaka, A. Khoury, P. Mialhe:
Carriers temperature for an operating silicon p-n junction. Microelectron. J. 38(4-5): 615-619 (2007) - Kristy A. Campbell, Christopher M. Anderson:
Phase-change memory devices with stacked Ge-chalcogenide/Sn-chalcogenide layers. Microelectron. J. 38(1): 52-59 (2007) - Kah-Yoong Chan, Bee-San Teo:
Investigation into the influence of direct current (DC) power in the magnetron sputtering process on the copper crystallite size. Microelectron. J. 38(1): 60-62 (2007) - Rajeevan Chandel, Sankar Sarkar, Rajendra Prasad Agarwal:
An analysis of interconnect delay minimization by low-voltage repeater insertion. Microelectron. J. 38(4-5): 649-655 (2007) - Shang-Chou Chang:
Low-pressure H2/N2 annealing on indium tin oxide film. Microelectron. J. 38(12): 1220-1225 (2007) - Shang-Chou Chang, Tien-Chai Lin, Chen-Yu Pai:
Low-temperature process in growing carbon nanotube. Microelectron. J. 38(6-7): 657-662 (2007) - Hsien-Tsung Chang, Chia-Yen Lee, Chih-Yung Wen, Boe-Shong Hong:
Theoretical analysis and optimization of electromagnetic actuation in a valveless microimpedance pump. Microelectron. J. 38(6-7): 791-799 (2007)
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