- 2023
- Zainab Baharvand, Abdolreza Nabavi
, Habibollah Zolfkhani:
A low-power mm-wave reduced-noise active balun with low-phase and low-gain error using common-gate shorting and DeQ inductor technique. Microelectron. J. 139: 105885 (2023) - Sunitha Bhukya
, Bheema Rao Nistala:
Design optimization of junctionless bottom spacer tapered FinFET: Device to circuit level implementation. Microelectron. J. 139: 105907 (2023) - Venu Birudu, Siva Sankar Yellampalli, Ramesh Vaddi
:
A negative capacitance FET based energy efficient 6T SRAM computing-in-memory (CiM) cell design for deep neural networks. Microelectron. J. 139: 105867 (2023) - Lukas Buryanec, Sandor Petenyi, Giuseppina Billè, Calogero Ribellino, Jiri Jakovenko:
Programmable 1 A ultra-low dropout LDO regulator for high-resolution camera sensors. Microelectron. J. 139: 105899 (2023) - Jing Cao
, Bingjie Chen, Hongfei Ye, Jianhua Feng:
A peak-current mode boost converter with fast linear transient response. Microelectron. J. 139: 105897 (2023) - Hakan Çetinkaya
, Alper Girgin, Tufan Coskun Karalar:
Fully integrated multi-level non-overlapping clock phase generator for pipelined ADCs in SiGe BiCMOS 0.13 μm. Microelectron. J. 139: 105840 (2023) - Bofan Chen
, Zhiqun Li, Jinghao Di, Xiaowei Wang, Xuefan Yang:
A 6-18 GHz bulk CMOS three-stage gain-compensation amplifier for phased-array radar system. Microelectron. J. 139: 105869 (2023) - Yanning Chen, Dongyan Zhao, Fang Liu, Jie Gao, Hui Zhu
:
Thermal layout optimization for 3D stacked multichip modules. Microelectron. J. 139: 105882 (2023) - Quentin Delhaye
, Eric Beyne, Joël Goossens, Geert Van der Plas, Dragomir Milojevic:
Impact of gate-level clustering on automated system partitioning of 3D-ICs. Microelectron. J. 139: 105896 (2023) - Sharvani Gadgil
, Goli Naga Sandesh, Chetan Vudadha:
Power efficient designs of CNTFET-based ternary SRAM. Microelectron. J. 139: 105884 (2023) - Sumedha Gupta
, Neeta Pandey, R. S. Gupta:
Modeling of Dual- Metal Junctionless Accumulation-Mode cylindrical surrounding gate (DM-JAM-CSG) MOSFET for cryogenic temperature applications. Microelectron. J. 139: 105880 (2023) - Tiecheng Han
, Xiaocan Peng, Wenqian Zhang, Tongju Wang, Liu Yang, Peng Zhao:
Effects of physical parameters of graded AlGaN buffer on DC characteristic and short-channel effects in AlInN/GaN high-electron mobility transistors. Microelectron. J. 139: 105881 (2023) - Junyan Hao, Yi Shen, Angyang Li, Min Wang, Qing Zou, Zheng Qiu, Shubin Liu, Zhangming Zhu:
An offset and gain error calibration method in high-precision SAR ADCs. Microelectron. J. 139: 105915 (2023) - Xin Hong, Haiyan Dai, Haofan Ding, Junyuan Wu, Deyan Chen, Jing-Hu Li
, Zhicong Luo
:
A 25-Gb/s dual-loop adaptive continuous-time linear equalizer based on power comparison for the optical transmitter. Microelectron. J. 139: 105900 (2023) - Arash Hosseini, Shahram Mohammadnejad, Mohammad Azim Karami:
Differential high gain transimpedance amplifier with -3dB-bandwidth extension. Microelectron. J. 139: 105861 (2023) - Hujun Jia, Yangyi Shen, Huan Wang, Xiaojie Wang, Yunfan Zhang, Shunwei Zhu, Yintang Yang:
A novel high-performance trench lateral double-diffused MOSFET with buried oxide bump layer. Microelectron. J. 139: 105911 (2023) - Bhavya Kumar, Megha Sharma, Rishu Chaujar:
Junctionless-accumulation-mode stacked gate GAA FinFET with dual-k spacer for reliable RFIC design. Microelectron. J. 139: 105910 (2023) - Priyanka Kwatra, Sajai Vir Singh, Kaushal Nigam:
Design and analysis of novel bilateral tunnelling based tunnel FET considering workfunction engineered metal strip for enhanced performance. Microelectron. J. 139: 105878 (2023) - Hao Li, Dongsheng Liu, Yingxiang Liang, Ang Hu, Zheng Nie, Chengcheng Zhang, Kaiyue Li, Guangda Niu, Liang Gao, Jiang Tang:
A 12-bit single slope ADC with multi-step structure and ramp calibration technique for image sensors. Microelectron. J. 139: 105919 (2023) - Dongshuai Li, Wang Lin, Qiliang Wang, Xianyi Lv, Tong Zhang, Liuan Li
:
Trenched diamond PN junction diode with enhanced conductance modulation effect designed by simulation. Microelectron. J. 139: 105903 (2023) - Shengqi Li
, Guodong Su, Xiang Wang, Lei Han, Jun Liu:
A 4.5-8.5 GHz GaAs power amplifier with high in-band flatness. Microelectron. J. 139: 105887 (2023) - Ji-Hu Li
, Cong Wang, Luqman Ali, Xiao Tan, Yu-Chen Wei, Hokun Sung, Zhi-Qiang Gao, Shan-Shan Xu, Yang Li:
Design and optimization of GaAs-based thin film integrated passive device bandpass filters for 5G communications. Microelectron. J. 139: 105913 (2023) - Yan Li, Weifeng Yang, Jiang Li
, Yanfang Yuan, Hu Zhang, Fengdi Wang, Yijun Cui:
Dynamic self-test scheme and authentication protocol for improving robustness of strong PUF. Microelectron. J. 139: 105864 (2023) - Xinfang Liao
, Changqing Xu
, Yi Liu, Chen Wang, Dongdong Chen, Yintang Yang:
Machine learning based prediction model for single event burnout hardening design of power MOSFETs. Microelectron. J. 139: 105893 (2023) - Di Luo, Cong Li
, Yun-qi Wang, Ouwen Li, Feng-yu Kuang, Hailong You:
A novel inverted T-shaped negative capacitance TFET for label-free biosensing application. Microelectron. J. 139: 105886 (2023) - Ravindra Kumar Maurya
, Vivek Kumar, Rajesh Saha, Brinda Bhowmick
:
Effect of curie temperature on electrical parameters of NC-FinFET and digital switching application of NC-FinFET. Microelectron. J. 139: 105892 (2023) - Ankur Mukherjee, Ashik C. Jayamon, R. Sai Chandra Teja
, Ashudeb Dutta:
Ultra-low voltage start-up clock generators for micro-scale energy harvesting: New variants of body-biased stacked inverter based ring oscillators. Microelectron. J. 139: 105883 (2023) - Syed Farah Naz
, Ambika Prasad Shah
, Neha Gupta:
Leakage power attack resilient Schmitt trigger based 12T symmetric SRAM cell. Microelectron. J. 139: 105888 (2023) - Lei Ni, Pengjun Wang
, Yuejun Zhang
, Huihong Zhang, Xiangyu Li, Li Ni, Jie Lv, Weifang Zheng:
Profiling side-channel attacks based on CNN model fusion. Microelectron. J. 139: 105901 (2023) - Shraddha Pali
, Nitish Kumar
, Ankur Gupta:
P-type trench gate based drain-extended N-type MOS design for high unclamped inductive switching reliability. Microelectron. J. 139: 105894 (2023)