"A 4.5-8.5 GHz GaAs power amplifier with high in-band flatness."

Shengqi Li et al. (2023)

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DOI: 10.1016/J.MEJO.2023.105887

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type: Journal Article

metadata version: 2023-09-24

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Shengqi Li, Guodong Su, Xiang Wang, Lei Han, Jun Liu:
A 4.5-8.5 GHz GaAs power amplifier with high in-band flatness. Microelectron. J. 139: 105887 (2023)

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