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ORCIDRihito Kuroda
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2020 – today
- 2024
[j12]Chia-Chi Kuo
, Rihito Kuroda:
A 134×132 4-Tap CMOS Indirect Time-of-Flight Range Imager Using In-Pixel Memory Array With 10 Kfps High-Speed Mode and High Precision Mode. IEEE J. Solid State Circuits 59(2): 492-501 (2024)- 2022
- [j11]Yuki Sugama, Yoshiaki Watanabe, Rihito Kuroda, Masahiro Yamamoto, Tetsuya Goto, Toshiro Yasuda, Hiroshi Hamori, Naoya Kuriyama, Shigetoshi Sugawa:
Two High-Precision Proximity Capacitance CMOS Image Sensors with Large Format and High Resolution. Sensors 22(7): 2770 (2022) - [c25]Chia-Chi Kuo, Rihito Kuroda:
A 4-Tap CMOS Time-of-Flight Image Sensor with In-pixel Analog Memory Array Achieving 10Kfps High-Speed Range Imaging and Depth Precision Enhancement. VLSI Technology and Circuits 2022: 48-49 - 2021
- [c24]Shunta Kamoshita, Manabu Suzuki, Rihito Kuroda, Shigetoshi Sugawa:
A Proposal of Analog Correlated Multiple Sampling with High Density Capacitors for Low Noise CMOS Image Sensors. Imaging Sensors and Systems 2021: 1-6 - 2020
- [j10]Yhang Ricardo Sipauba Carvalho da Silva, Rihito Kuroda, Shigetoshi Sugawa:
An Optical Filter-Less CMOS Image Sensor with Differential Spectral Response Pixels for Simultaneous UV-Selective and Visible Imaging. Sensors 20(1): 13 (2020) - [j9]Manabu Suzuki, Yuki Sugama, Rihito Kuroda, Shigetoshi Sugawa:
Over 100 Million Frames per Second 368 Frames Global Shutter Burst CMOS Image Sensor with Pixel-wise Trench Capacitor Memory Array. Sensors 20(4): 1086 (2020) - [c23]Yasuyuki Fujihara, Maasa Murata, Shota Nakayama, Rihito Kuroda, Shigetoshi Sugawa:
An Over 120dB Dynamic Range Linear Response Single Exposure CMOS Image Sensor with Two-stage Lateral Overflow Integration Trench Capacitors. Imaging Sensors and Systems 2020: 1-6 - [c22]Ryo Akimoto, Rihito Kuroda, Akinobu Teramoto, Takezo Mawaki, Shinya Ichino, Tomoyuki Suwa, Shigetoshi Sugawa:
Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis of MOSFETs with Various Gate Shapes. IRPS 2020: 1-6
2010 – 2019
- 2019
- [j8]Yhang Ricardo Sipauba Carvalho da Silva, Rihito Kuroda, Shigetoshi Sugawa:
A Highly Robust Silicon Ultraviolet Selective Radiation Sensor Using Differential Spectral Response Method. Sensors 19(12): 2755 (2019) - 2018
- [j7]Kohei Terashima, Kazuhiro Wako, Yasuyuki Fujihara, Yusuke Aoyagi, Maasa Murata, Yosei Shibata, Shigetoshi Sugawa, Takahiro Ishinabe, Rihito Kuroda, Hideo Fujikake:
High Speed and Narrow-Bandpass Liquid Crystal Filter for Real-Time Multi Spectral Imaging Systems. IEICE Trans. Electron. 101-C(11): 897-900 (2018) - [c21]Manabu Suzuki, Masashi Suzuki, Rihito Kuroda, Shigetoshi Sugawa:
A Preliminary Chip Evaluation toward Over 50Mfps Burst Global Shutter Stacked CMOS Image Sensor. IMSE 2018: 1-4 - 2017
- [c20]Yasumasa Koda, Rihito Kuroda, Masaya Hara, Hiroyuki Tsunoda, Shigetoshi Sugawa:
High Sensitivity and High Readout Speed Electron Beam Detector using Steep pn Junction Si diode for Low Acceleration Voltage. IMSE 2017: 14-17 - 2016
- [c19]Yasuyuki Fujihara, Satoshi Nasuno, Shunichi Wakashima, Yusuke Aoyagi, Rihito Kuroda, Shigetoshi Sugawa:
190-1100 nm Waveband multispectral imaging system using high light resistance wide dynamic range CMOS image sensor. IEEE SENSORS 2016: 1-3 - [c18]Hidekazu Ishii, Masaaki Nagase, Nobukazu Ikeda, Yoshinobu Shiba, Yasuyuki Shirai, Rihito Kuroda, Shigetoshi Sugawa:
A high sensitivity compact gas concentration sensor using UV light and charge amplifier circuit. IEEE SENSORS 2016: 1-3 - [c17]Hidetake Sugo, Shunichi Wakashima, Rihito Kuroda, Yuichiro Yamashita, Hirofumi Sumi, Tzu-Jui Wang, Po-Sheng Chou, Ming-Chieh Hsu, Shigetoshi Sugawa:
A dead-time free global shutter CMOS image sensor with in-pixel LOFIC and ADC using pixel-wis e connections. VLSI Circuits 2016: 1-2 - 2015
- [c16]Shunichi Wakashima, Fumiaki Kusuhara, Rihito Kuroda, Shigetoshi Sugawa:
Analysis of pixel gain and linearity of CMOS image sensor using floating capacitor load readout operation. IMSE 2015: 94030E - [c15]Shunichi Wakashima, Fumiaki Kusuhara, Rihito Kuroda, Shigetoshi Sugawa:
A linear response single exposure CMOS image sensor with 0.5e- readout noise and 76ke- full well capacity. VLSIC 2015: 88- - 2014
- [j6]Rihito Kuroda, Shigetoshi Sugawa:
Si image sensors with wide spectral response and high robustness to ultraviolet light exposure. IEICE Electron. Express 11(10): 20142004 (2014) - [c14]Takahiro Akutsu, Shun Kawada, Yasumasa Koda, Taiki Nakazawa, Rihito Kuroda, Shigetoshi Sugawa:
A 1024×1 linear photodiode array sensor with fast readout speed flexible pixel-level integration time and high stability to UV light exposure. IMSE 2014: 90220L - [c13]A. Yonezawa, Rihito Kuroda, Akinobu Teramoto, T. Obara, Shigetoshi Sugawa:
A statistical evaluation of effective time constants of random telegraph noise with various operation timings of in-pixel source follower transistors. IMSE 2014: 90220F - [c12]Ken Miyauchi, Tohru Takeda, K. Hanzawa, Yasuhisa Tochigi, S. Sakai, Rihito Kuroda, H. Tominaga, R. Hirose, K. Takubo, Y. Kondo, Shigetoshi Sugawa:
Pixel structure with 10 nsec fully charge transfer time for the 20m frame per second burst CMOS image sensor. IMSE 2014: 902203 - [c11]F. Shao, D. Kimoto, K. Furukawa, Hidetake Sugo, T. Takeda, Ken Miyauchi, Yasuhisa Tochigi, Rihito Kuroda, Shigetoshi Sugawa:
Ultra-high speed video capturing of time dependent dielectric breakdown of metal-oxide-silicon capacitor up to 10M frame per second. IMSE 2014: 902205 - 2013
- [j5]Yasuhisa Tochigi, Katsuhiko Hanzawa, Yuri Kato, Rihito Kuroda, Hideki Mutoh, Ryuta Hirose, Hideki Tominaga, Kenji Takubo, Yasushi Kondo, Shigetoshi Sugawa:
A Global-Shutter CMOS Image Sensor With Readout Speed of 1-Tpixel/s Burst and 780-Mpixel/s Continuous. IEEE J. Solid State Circuits 48(1): 329-338 (2013) - [c10]Shun Kawada, Rihito Kuroda, Shigetoshi Sugawa:
Color reproductivity improvement with additional virtual color filters for WRGB image sensor. Color Imaging: Displaying, Processing, Hardcopy, and Applications 2013: 865205 - [c9]Yasumasa Koda, Rihito Kuroda, Taiki Nakazawa, Y. Nakao, Shigetoshi Sugawa:
A UV Si-photodiode with almost 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack. Sensors, Cameras, and Systems for Industrial and Scientific Applications 2013: 86590J - [c8]Rihito Kuroda, A. Yonezawa, Akinobu Teramoto, T. L. Li, Yasuhisa Tochigi, Shigetoshi Sugawa:
A statistical evaluation of low frequency noise of in-pixel source follower-equivalent transistors with various channel types and body bias. Sensors, Cameras, and Systems for Industrial and Scientific Applications 2013: 86590D - [c7]Tsung-Ling Li, Yasuyuki Goda, Shunichi Wakashima, Rihito Kuroda, Shigetoshi Sugawa:
New analog readout architecture for low noise CMOS image sensors using column-parallel forward noise-canceling circuitry. Sensors, Cameras, and Systems for Industrial and Scientific Applications 2013: 86590E - [c6]Shunichi Wakashima, Y. Goda, T. L. Li, Rihito Kuroda, Shigetoshi Sugawa:
A CMOS image sensor using floating capacitor load readout operation. Sensors, Cameras, and Systems for Industrial and Scientific Applications 2013: 86590I - 2012
- [c5]Taiki Nakazawa, Rihito Kuroda, Yasumasa Koda, Shigetoshi Sugawa:
Photodiode dopant structure with atomically flat Si surface for high-sensitivity and stability to UV light. Sensors, Cameras, and Systems for Industrial and Scientific Applications 2012: 82980M - [c4]Yasuhisa Tochigi, Katsuhiko Hanzawa, Yuri Kato, Rihito Kuroda, Hideki Mutoh, Ryuta Hirose, Hideki Tominaga, Kenji Takubo, Yasushi Kondo, Shigetoshi Sugawa:
A global-shutter CMOS image sensor with readout speed of 1Tpixel/s burst and 780Mpixel/s continuous. ISSCC 2012: 382-384 - 2011
- [c3]Shun Kawada, Rihito Kuroda, Shigetoshi Sugawa:
A robust color signal processing with wide dynamic range WRGB CMOS image sensor. Digital Photography 2011: 78760W - [c2]Yasuhisa Tochigi, Katsuhiko Hanzawa, Yuri Kato, Nana Akahane, Rihito Kuroda, Shigetoshi Sugawa:
A prototype high-speed CMOS image sensor with 10, 000, 000 fps burst-frame rate and 10, 000 fps continuous-frame rate. Digital Photography 2011: 78760G
2000 – 2009
- 2009
- [j4]Masahiro Konda, Akinobu Teramoto, Tomoyuki Suwa, Rihito Kuroda, Tadahiro Ohmi:
Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces. IEICE Trans. Electron. 92-C(5): 664-670 (2009) - [c1]Shin Sakai, Yoshiaki Tashiro, Nana Akahane, Rihito Kuroda, Koichi Mizobuchi, Shigetoshi Sugawa:
A pixel-shared CMOS image sensor using lateral overflow gate. ESSCIRC 2009: 240-243 - 2008
- [j3]Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi:
Accurate negative bias temperature instability lifetime prediction based on hole injection. Microelectron. Reliab. 48(10): 1649-1654 (2008) - 2007
- [j2]Kazufumi Watanabe, Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi:
Examination of degradation mechanism due to negative bias temperature stress from a perspective of hole energy for accurate lifetime prediction. Microelectron. Reliab. 47(2-3): 409-418 (2007) - [j1]Rihito Kuroda, Akinobu Teramoto, Kazufumi Watanabe, Michihiko Mifuji, Takahisa Yamaha, Shigetoshi Sugawa, Tadahiro Ohmi:
Circuit level prediction of device performance degradation due to negative bias temperature stress. Microelectron. Reliab. 47(6): 930-936 (2007)
Coauthor Index
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