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ORCIDTomoaki Yabe
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2010 – 2019
- 2014
[j6]Fumihiko Tachibana, Osamu Hirabayashi, Yasuhisa Takeyama, Miyako Shizuno, Atsushi Kawasumi, Keiichi Kushida, Azuma Suzuki, Yusuke Niki, Shinichi Sasaki, Tomoaki Yabe, Yasuo Unekawa:
A 27% Active and 85% Standby Power Reduction in Dual-Power-Supply SRAM Using BL Power Calculator and Digitally Controllable Retention Circuit. IEEE J. Solid State Circuits 49(1): 118-126 (2014)- 2013
- [c10]Fumihiko Tachibana, Osamu Hirabayashi, Yasuhisa Takeyama, Miyako Shizuno, Atsushi Kawasumi, Keiichi Kushida, Azuma Suzuki, Yusuke Niki, Shinichi Sasaki, Tomoaki Yabe, Yasuo Unekawa:
A 27% active and 85% standby power reduction in dual-power-supply SRAM using BL power calculator and digitally controllable retention circuit. ISSCC 2013: 320-321 - 2012
- [c9]Atsushi Kawasumi, Yasuhisa Takeyama, Osamu Hirabayashi, Keiichi Kushida, Fumihiko Tachibana, Yusuke Niki, Shinichi Sasaki, Tomoaki Yabe:
Energy efficiency deterioration by variability in SRAM and circuit techniques for energy saving without voltage reduction. ICICDT 2012: 1-4 - [c8]Atsushi Kawasumi, Yasuhisa Takeyama, Osamu Hirabayashi, Keiichi Kushida, Fumihiko Tachibana, Yusuke Niki, Shinichi Sasaki, Tomoaki Yabe:
A 47% access time reduction with a worst-case timing-generation scheme utilizing a statistical method for ultra low voltage SRAMs. VLSIC 2012: 100-101 - 2011
- [j5]Yusuke Niki, Atsushi Kawasumi, Azuma Suzuki, Yasuhisa Takeyama, Osamu Hirabayashi, Keiichi Kushida, Fumihiko Tachibana, Yuki Fujimura, Tomoaki Yabe:
A Digitized Replica Bitline Delay Technique for Random-Variation-Tolerant Timing Generation of SRAM Sense Amplifiers. IEEE J. Solid State Circuits 46(11): 2545-2551 (2011) - [c7]Keiichi Kushida, Osamu Hirabayashi, Fumihiko Tachibana, Hiroyuki Hara, Atsushi Kawasumi, Azuma Suzuki, Yasuhisa Takeyama, Yuki Fujimura, Yusuke Niki, Miyako Shizuno, Shinichi Sasaki, Tomoaki Yabe:
A trimless, 0.5V-1.0V wide voltage operation, high density SRAM macro utilizing dynamic cell stability monitor and multiple memory cell access. A-SSCC 2011: 161-164 - 2010
- [j4]Atsushi Kawasumi, Yasuhisa Takeyama, Osamu Hirabayashi, Keiichi Kushida, Yuki Fujimura, Tomoaki Yabe:
A Low-Supply-Voltage-Operation SRAM With HCI Trimmed Sense Amplifiers. IEEE J. Solid State Circuits 45(11): 2341-2347 (2010) - [c6]Yuki Fujimura, Osamu Hirabayashi, Takahiko Sasaki, Azuma Suzuki, Atsushi Kawasumi, Yasuhisa Takeyama, Keiichi Kushida, Gou Fukano, Akira Katayama, Yusuke Niki, Tomoaki Yabe:
A configurable SRAM with constant-negative-level write buffer for low-voltage operation with 0.149µm2 cell in 32nm high-k metal-gate CMOS. ISSCC 2010: 348-349
2000 – 2009
- 2009
- [j3]Keiichi Kushida, Azuma Suzuki, Gou Fukano, Atsushi Kawasumi, Osamu Hirabayashi, Yasuhisa Takeyama, Takahiko Sasaki, Akira Katayama, Yuki Fujimura, Tomoaki Yabe:
A 0.7 V Single-Supply SRAM With 0.495 µm2 Cell in 65 nm Technology Utilizing Self-Write-Back Sense Amplifier and Cascaded Bit Line Scheme. IEEE J. Solid State Circuits 44(4): 1192-1198 (2009) - [c5]Osamu Hirabayashi, Atsushi Kawasumi, Azuma Suzuki, Yasuhisa Takeyama, Keiichi Kushida, Takahiko Sasaki, Akira Katayama, Gou Fukano, Yuki Fujimura, Takaaki Nakazato, Yasushi Shizuki, Natsuki Kushiyama, Tomoaki Yabe:
A process-variation-tolerant dual-power-supply SRAM with 0.179µm2 Cell in 40nm CMOS using level-programmable wordline driver. ISSCC 2009: 458-459 - 2008
- [c4]Atsushi Kawasumi, Tomoaki Yabe, Yasuhisa Takeyama, Osamu Hirabayashi, Keiichi Kushida, Akihito Tohata, Takahiko Sasaki, Akira Katayama, Gou Fukano, Yuki Fujimura, Nobuaki Otsuka:
A Single-Power-Supply 0.7V 1GHz 45nm SRAM with An Asymmetrical Unit-×-ratio Memory Cell. ISSCC 2008: 382-383 - [c3]Akira Katayama, Tomoaki Yabe, Osamu Hirabayashi, Yasuhisa Takeyama, Keiichi Kushida, Takahiko Sasaki, Nobuaki Otsuka:
Direct Cell-Stability Test Techniques for an SRAM Macro with Asymmetric Cell-Bias-Voltage Modulation. ITC 2008: 1-7 - 2002
- [c2]Osamu Hirabayashi, Azuma Suzuki, Tomoaki Yabe, Atsushi Kawasumi, Yasuhisa Takeyama, Keiichi Kushida, Akihito Tohata, Nobuaki Otsuka:
DFT Techniques for Wafer-Level At-Speed Testing of High-Speed SRAMs. ITC 2002: 164-169
1990 – 1999
- 1998
- [j2]Tomoaki Yabe, Shinji Miyano, Katsuhiko Sato, Masaharu Wada, Ryo Haga, Osamu Wada, Motohiro Enkaku, Takehiko Hojyo, Kenichiro Mimoto, Masaaki Tazawa, Tsutomu Ohkubo, Kenji Numata:
A configurable DRAM macro design for 2112 derivative organizations to be synthesized using a memory generator. IEEE J. Solid State Circuits 33(11): 1752-1757 (1998) - [c1]Hideki Takeuchi, Tomoaki Yabe, Shinji Miyano, Takehiko Hojo, Motohiro Enkaku, Masaaki Yamada, Masami Murakata:
A DRAM module generator with an expandable cell array scheme. CICC 1998: 287-290 - 1995
- [j1]Shinji Miyano, Kenji Numata, Katsuhiko Sato, Tomoaki Yabe, Masaharu Wada, Ryo Haga, Motohiro Enkaku, Masazumi Shiochi, Yutaka Kawashima, Masayuki Iwase, Masahisa Ohgata, Junpei Kumagai, Takeshi Yoshida, Masaomi Sakurai, Seiji Kaki, Narutoshi Yanagiya, Hiroshi Shinya, Tohm Fumyama, Paul Hansen, Marc Hannah, Michael Nagy, Anan Nagarajan, Mana Rungsea:
A 1.6 Gbyte/s data transfer rate 8 Mb embedded DRAM. IEEE J. Solid State Circuits 30(11): 1281-1285 (1995)
Coauthor Index
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