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ORCIDGiovanni Verzellesi
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2020 – today
- 2021
[c7]Marcello Cioni, Alessandro Bertacchini, Alessandro Mucci, Giovanni Verzellesi
, Paolo Pavan, Alessandro Chini:
Investigation on VTH and RON Slow/Fast Drifts in SiC MOSFETs. IRPS 2021: 1-5- 2020
- [c6]Luca Pintori, Giovanni Verzellesi, Luigi Rovati:
Characterization of a premixed flat combustor through plasma current measurements. I2MTC 2020: 1-5 - [c5]Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Giovanni Verzellesi:
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs. IRPS 2020: 1-5
2010 – 2019
- 2017
- [c4]Nicolo Zagni, Francesco Maria Puglisi, Giovanni Verzellesi, Paolo Pavan:
Variability and sensitivity to process parameters variations in InGaAs dual-gate ultra-thin body MOSFETs: A scaling perspective. PATMOS 2017: 1-5 - 2015
- [c3]Daniel Magalotti, Pisana Placidi, Stefania Fabiani, Lucia Bissi, Massimiliano Paolucci, Andrea Scorzoni, Andrea Calandra, Giovanni Verzellesi, Leonello Servoli:
A Wireless Personal Sensor Node for Real Time Dosimetry of Interventional Radiology Operators. ApplePies 2015: 1-7 - [c2]Francesco Bertazzi, Stefano Dominici, Marco Mandurrino, Dipika Robidas, Xiangyu Zhou, Marco Vallone, Marco Calciati, Pierluigi Debernardi, Giovanni Verzellesi, Matteo Meneghini, Enrico Bellotti, Giovanni Ghione, Michele Goano:
Modeling challenges for high-efficiency visible light-emitting diodes. RTSI 2015: 157-160 - 2014
- [j5]Matteo Meneghini, Simone Vaccari, Matteo Dal Lago, Stefano Marconi, Marco Barbato, Nicola Trivellin, Alessio Griffoni, Alberto Alfier, Giovanni Verzellesi, Gaudenzio Meneghesso, Enrico Zanoni:
ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements. Microelectron. Reliab. 54(6-7): 1143-1149 (2014) - [c1]Fabio Alessio Marino, Davide Bisi, Matteo Meneghini, Giovanni Verzellesi, Enrico Zanoni, Marleen Van Hove, Shuzhen You, Stefaan Decoutere, Denis Marcon, Steve Stoffels, Nicolo Ronchi, Gaudenzio Meneghesso:
Breakdown investigation in GaN-based MIS-HEMT devices. ESSDERC 2014: 377-380 - 2010
- [j4]Mustapha Faqir, Mohsine Bouya, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, Giovanni Verzellesi, Fausto Fantini:
Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations. Microelectron. Reliab. 50(9-11): 1520-1522 (2010)
2000 – 2009
- 2007
- [j3]Mustapha Faqir, Giovanni Verzellesi, Fausto Fantini, Francesca Danesin, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Anna Cavallini, Antonio Castaldini, Nathalie Labat, André Touboul, Christian Dua:
Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs. Microelectron. Reliab. 47(9-11): 1639-1642 (2007) - 2005
- [j2]Giovanni Verzellesi, Gaudenzio Meneghesso, Alessandro Chini, Enrico Zanoni, Claudio Canali:
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues. Microelectron. Reliab. 45(9-11): 1585-1592 (2005) - 2001
- [j1]Mattia Borgarino, Giovanna Sozzi, Andrea Mazzanti, Giovanni Verzellesi:
Gate-lag effects in AlGaAs/GaAs power HFET's. Microelectron. Reliab. 41(9-10): 1585-1589 (2001)
Coauthor Index
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