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Journal Articles
- 2023
[j9]Yang Feng, Bing Chen, Mingfeng Tang, Yuerang Qi, Maoying Bai, Chengcheng Wang, Hai Wang, Xuepeng Zhan, Junyu Zhang, Jing Liu, Jixuan Wu, Jiezhi Chen:
Near-threshold-voltage operation in flash-based high-precision computing-in-memory to implement Poisson image editing. Sci. China Inf. Sci. 66(12) (2023)- [j8]Shuhao Wu, Bo Chen, Chengcheng Wang, Junyao Mei, Maoying Bai, Xuepeng Zhan
, Jixuan Wu, Junshuai Chai, Hao Xu, Xiaolei Wang, Jiezhi Chen:
Dual-pulse disturb-free programming scheme for FeFET based neuromorphic computing. Microelectron. J. 137: 105818 (2023) - [j7]Xiaotong Fang, Meng Zhang, Yifan Guo, Fei Chen, Binglu Chen, Xuepeng Zhan, Jixuan Wu, Fei Wu, Jiezhi Chen:
High-Precision Short-Term Lifetime Prediction in TLC 3-D NAND Flash Memory as Hot-Data Storage. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42(10): 3224-3235 (2023) - 2022
- [j6]Xuepeng Zhan, Jiezhi Chen, Zhigang Ji:
Insights of VG-dependent threshold voltage fluctuations from dual-point random telegraph noise characterization in nanoscale transistors. Sci. China Inf. Sci. 65(8): 1-2 (2022) - [j5]Mingtao Xu, Bo Chen, Qi Jin, Lu Tai, Xuepeng Zhan, Jiezhi Chen:
Voltage and temperature dependence of Random Telegraph Noise and their impacts on random number generator. Microelectron. J. 125: 105450 (2022) - [j4]Menghua Jia, Yachen Kong, Xuepeng Zhan, Meng Zhang, Fei Wu, Jiezhi Chen:
Optimal Program-Read Schemes Toward Highly Reliable Open Block Operations in 3-D Charge-Trap NAND Flash Memory. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 41(11): 4797-4807 (2022) - 2021
- [j3]Yang Feng, Fei Wang, Xuepeng Zhan, Yuan Li, Jiezhi Chen:
Flash memory based computing-in-memory system to solve partial differential equations. Sci. China Inf. Sci. 64(6) (2021) - 2020
- [j2]Xuepeng Zhan, Yifang Xi, Qianwen Wang, Weiqiang Zhang, Zhigang Ji, Jiezhi Chen:
Dual-Point Technique for Multi-Trap RTN Signal Extraction. IEEE Access 8: 88141-88146 (2020) - [j1]Yachen Kong, Meng Zhang, Xuepeng Zhan, Rui Cao, Jiezhi Chen:
Retention Correlated Read Disturb Errors in 3-D Charge Trap NAND Flash Memory: Observations, Analysis, and Solutions. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 39(11): 4042-4051 (2020)
Conference and Workshop Papers
- 2023
- [c8]Yang Feng, Yueran Qi, Xuepeng Zhan, Jixuan Wu, Jiezhi Chen:
Flash-based Computing-in-memory Architectures with High-accuracy and Robust Reliabilities for General-purpose Applications. ASICON 2023: 1-4 - [c7]Shaoqi Yang, Xiaohuan Zhao, Kenie Xie, Xuepeng Zhan, Jixuan Wu, Jiezhi Chen:
One-shot Read Processing to Enhance Cold Data Retention in Charge-trap TLC 3D NAND Flash. ASICON 2023: 1-4 - [c6]Zhichao Du, Chuanxue Sun, Xiaoyu Dou, Pengpeng Sang, Xuepeng Zhan, Chengji Jin, Jixuan Wu, Jiezhi Chen:
Simulation for the Feasibility of IGZO Channel in 3D Vertical FeFET Memory Based on TCAD. ICTA 2023: 51-52 - [c5]Junyao Mei, Bo Chen, Pengpeng Sang, Jixuan Wu, Xuepeng Zhan, Jiezhi Chen:
Opto-Electronic Monolayer ZnO Memristor Produced via Low Temperature Atomic Layer Deposition. ICTA 2023: 53-54 - [c4]Xiaohuan Zhao, Shaoqi Yang, Kenie Xie, Yang Feng, Qianwen Wang, Pengpeng Sang, Xuepeng Zhan, Jixuan Wu, Jiezhi Chen:
Error Bits Recovering in 3D NAND Flash Memory: A Novel State-Shift Re-Program (SRP) Scheme. ICTA 2023: 99-100 - 2022
- [c3]Xiaotong Fang, Meng Zhang, Yifan Guo, Fei Chen, Binglu Chen, Xuepeng Zhan, Jixuan Wu, Fei Wu, Jiezhi Chen:
Work-in-Progress: High-Precision Short-Term Lifetime Prediction in TLC 3D NAND Flash Memory as Hot-data Storage. CASES 2022: 11-12 - [c2]Kenie Xie, Pena Guo, Fei Chen, Binglu Chen, Xiaotong Fang, Jixuan Wu, Xuepeng Zhan, Jiezhi Chen:
Large Suppression to Lateral Charge Migration (LCM) Related Error Bits in Charge-Trap TLC 3D NAND Flash. ICTA 2022: 24-25 - 2021
- [c1]Yifang Xi, Xiaotong Fang, Yachen Kong, Yifan Guo, Hongzhe Lin, Xuepeng Zhan, Jiezhi Chen:
Bits Mapping in Triple-level-cell (TLC) Charge-trap (CT) 3D NAND Flash Memory and its Applications to IoT Security. ICTA 2021: 69-71
Informal and Other Publications
- 2024
- [i1]Yang Feng, Zhaohui Sun, Chengcheng Wang, Xinyi Guo, Junyao Mei, Yueran Qi, Jing Liu, Junyu Zhang, Jixuan Wu, Xuepeng Zhan, Jiezhi Chen:
Operation Scheme Optimizations to Achieve Ultra-high Endurance (1010) in Flash Memory with Robust Reliabilities. CoRR abs/2401.08120 (2024)
Coauthor Index
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